IXYS IXEH 40N120, IXEH 40N120D1 Service Manual
www.DataSheet4U.com
查询40N120供应商查询40N120供应商
IXEH 40N120
IXEH 40N120D1
NPT3 IGBT
C
G
E
G
IXEH 40N120 IXEH 40N120D1
IGBT
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
Symbol Conditions Characteristic Values
V
CE(sat)
TVJ = 25°C to 150°C 120 0 V
±
TC = 25°C 60 A
TC = 90°C 40 A
VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A
RBSOA, Clamped inductive load; L = 100 µH V
V
= 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 10 µs
CE
TC = 25°C 30 0 W
(T
= 25°C, unless otherwise specified)
VJ
min. typ. max.
IC = 40 A; VGE = 15 V; TVJ = 25°C 2.4 3.0 V
TVJ = 125°C 2.8 V
C
E
20 V
CES
I
C25
V
CES
V
CE(sat) typ.
= 60 A
= 1200 V
= 2.4 V
TO-247 AD
G
C
E
C (TAB)
Features
3
• NPT
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• optional HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• TO-247 package
- industry standard outline
- epoxy meets UL 94V-0
Applications
• AC drives
• DC drives and choppers
• Uninteruptible power supplies (UPS)
• switched-mode and resonant-mode
power supplies
• inductive heating, cookers
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IC = 1 mA; VGE = V
V
CE
= V
= 0 V; TVJ = 25°C 0.4 mA
CES; VGE
TVJ = 125°C 0.4 mA
CE
4.5 6.5 V
VCE = 0 V; VGE = ± 20 V 200 nA
85 ns
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 40 A
VGE = ±15 V; RG = 39 Ω
50 ns
440 ns
50 ns
6.1 mJ
3.0 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz 2 nF
V
= 600 V; VGE = 15 V; IC = 25 A 250 nC
CE
0.42 K/W
321
1 - 4© 2003 IXYS All rights reserved
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
www.DataSheet4U.com
IXEH 40N120
IXEH 40N120D1
Diode [D1 version only]
Symbol Conditions Maximum Ratings
I
F25
I
F90
TC = 25°C 60 A
TC = 90°C 35 A
Symbol Conditions Characteristic Values
min. typ. max.
V
I
RM
t
rr
E
R
F
rec(off)
thJC
IF = 40 A; TVJ = 25°C 2.6 3.0 V
TVJ = 125°C 2.0 V
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
51 A
180 ns
1.8 mJ
1.0 K/W
Component
Symbol Conditions Maximum Ratings
T
VJ
T
stg
M
d
mounting torque 0.8...1.2 Nm
-55...+150 °C
-55...+150 °C
Symbol Conditions Characteristic Values
min. typ. max.
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 45 m
Ω
Diode (typ. at TJ = 125°C)
V0 = 1.26V; R0 = 15 m
Ω
Thermal Response
IGBT
C
= 0.007 J/K; R
th1
C
= 0.187 J/K; R
th2
= 0.215 K/W
th1
= 0.205 K/W
th2
Diode
C
= 0.006 J/K; R
th1
C
= 0.113 J/K; R
th2
= 0.649 K/W
th1
= 0.351 K/W
th2
TO-247 AD Outline
R
thCH
with heatsink compound 0.25 K/W
Weight 6g
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
321
2 - 4© 2003 IXYS All rights reserved
Loading...