IXYS IXDT30N120, IXDH30N120D1, IXDH30N120, IXDT30N120D1 Datasheet
High V oltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 30N120
IXDH 30N120 D1
IXDT 30N120
IXDT 30N120 D1
C
G
G
V
CES
I
C25
V
CE(sat) typ
C
= 1200 V
= 60 A
= 2.4 V
TO-247 AD (IXDH)
E
IXDH 30N120 IXDH 30N120 D1
IXDT 30N120 IXDT 30N120 D1
E
TO--268 AA (IXDT)
Symbol Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 W ICM = 50 A
t
SC
(SCSOA) RG = 47 W, non repetitive
P
C
T
J
T
stg
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
TJ = 25°C to 150°C 1200 V
TJ = 25°C to 150°C; RGE = 20 kW 1200 V
Continuous ±20 V
Transient ±30 V
TC = 25°C 60 A
TC = 90°C 38 A
TC = 90°C, tp = 1 ms 76 A
Clamped inductive load, L = 30 µH V
VGE = ±15 V, VCE = V
, TJ = 125°C 10 µs
CES
CEK
< V
CES
TC = 25°C IGBT 300 W
Diode 135 W
-55 ... +150 °C
-55 ... +150 °C
Mounting torque 1.1/10 Nm/lb.in.
G = Gate, E = Emitter
C = Collector , TAB = Collector
Features
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Advantages
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Weight 6g
Typical Applications
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Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE(th)
I
CES
VGE = 0 V 1200 V
IC = 1 mA, VCE = V
VCE = V
CES
GE
TJ = 25°C 1.5 mA
TJ = 125°C 2.5 mA
4.5 6.5 V
●
●
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G
C
E
G
E
C (TAB)
C (TAB)
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard packages
Space savings
High power density
IXDT:
surface mountable high power package
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
I
V
GES
CE(sat)
VCE = 0 V, VGE = ± 20 V ± 500 nA
IC = 30 A, VGE = 15 V 2.4 2.9 V
© 2000 IXYS All rights reserved
031
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IXDH 30N120 IXDT 30N120
IXDH 30N120 D1 IXDT 30N120 D1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
C
C
C
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
R
R
ies
oes
res
g
on
off
thJC
thCK
VCE = 25 V, VGE = 0 V, f = 1 MHz 250 pF
IC = 30 A, VGE = 15 V, VCE = 0.5 V
CES
Inductive load, TJ = 125°C
IC = 30 A, VGE = ±15 V,
VCE = 600 V, RG = 47 W
Package with heatsink compound 0.25 K/W
1650 pF
110 pF
120 nC
100 ns
70 ns
500 ns
70 ns
4.6 mJ
3.4 mJ
0.42 K/W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
IF = 30 A, VGE = 0 V 2.5 2.7 V
IF = 30 A, VGE = 0 V, TJ = 125°C 2.0 V
I
F
TC = 25°C 60 A
TC = 90°C 35 A
I
RM
t
rr
t
rr
R
thJC
IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V 20 A
VGE = 0 V, TJ = 125°C 200 ns
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
1 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2000 IXYS All rights reserved
TO-268 AA Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
2.7 2.9 .106 .114
A
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
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