IXYS IXDR30N120D1, IXDR30N120 Datasheet
High Voltage IGBT
with optional Diode
ISOPLUS
(Electrically Isolated Back Side)
TM
package
IXDR 30N120 D1
IXDR 30N120
V
CES
I
C25
V
CE(sat) typ
= 1200 V
= 50 A
= 2.4 V
Short Circuit SOA Capability
Square RBSOA
G
C
G
E
IXDR 30N120 IXDR 30N120 D1
Symbol Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
TJ = 25°C to 150°C 1200 V
TJ = 25°C to 150°C; RGE = 20 kW 1200 V
Continuous ±20 V
Transient ±30 V
TC = 25°C 50 A
TC = 90°C 30 A
TC = 90°C, tp = 1 ms 60 A
RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 W ICM = 50 A
Clamped inductive load, L = 30 mH V
t
SC
VGE = ±15 V, VCE = V
, TJ = 125°C 10 µs
CES
CEK
< V
CES
(SCSOA) RG = 47 W, non repetitive
P
C
TC = 25°C IGBT 200 W
Diode 95 W
T
J
T
stg
V
ISOL
50/60 Hz, RMS I
£ 1 mA 2500 V~
ISOL
-55 ... +150 °C
-55 ... +150 °C
Weight 6g
C
ISOPLUS 247
E
G = Gate C = Collector E = Emitter
*Patent pending
Features
• NPT IGBT technology
●
●
Advantages
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• Package for clip or spring mounting
• Space savings
• High power density
Typical Applications
• AC motor speed control
• DC servo and robot drives
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE(th)
I
CES
VGE = 0 V 1200 V
IC = 1 mA, VCE = V
VCE = V
CES
GE
TJ = 25°C 1.5 mA
TJ = 125°C 2.5 mA
4.5 6.5 V
• DC choppers
• Uninteruptible power supplies (UPS)
• Switch-mode and resonant-mode
TM
E153432
G
C
E
Isolated Backside*
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for
easy paralleling
- MOS input, voltage controlled
- fast recovery epitaxial diode
Epoxy meets UL 94V-0
Isolated and UL registered E153432
power supplies
I
V
GES
CE(sat)
VCE = 0 V, VGE = ± 20 V ± 500 nA
IC = 30 A, VGE = 15 V 2.4 2.9 V
© 2000 IXYS All rights reserved
031
1 - 4
IXDR 30N120 D1
IXDR 30N120
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C
C
C
Q
t
t
t
t
E
E
R
R
ies
oes
res
g
d(on)
r
d(off)
f
on
off
thJC
thCH
VCE = 25 V, VGE = 0 V, f = 1 MHz 250 pF
IC = 30 A, VGE = 15 V, VCE = 0.5 V
CES
Inductive load, TJ = 125°C
I
= 30 A, VGE = ±15 V,
C
VCE = 600 V, RG = 47 W
Package with heatsink compound 0.25 K/W
1650 pF
110 pF
120 nC
100 ns
70 ns
500 ns
70 ns
4.6 mJ
3.4 mJ
0.6 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
IF = 30 A, VGE = 0 V 2.5 2.7 V
IF = 30 A, VGE = 0 V, TJ = 125°C 2.0 V
I
F
TC = 25°C 50 A
TC = 90°C 27 A
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
I
RM
t
rr
t
rr
R
thJC
IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V 20 A
VGE = 0 V, TJ = 125°C 200 ns
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
1.3 K/W
© 2000 IXYS All rights reserved
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