IXYS IXDP20N60BD1, IXDP20N60B Datasheet
High V oltage IGBT
with optional Diode
High Speed,
Low Saturation V oltage
IXDP 20N60 B
IXDP 20N60 BD1
C
C
V
CES
I
C25
V
CE(sat) typ
TO-220 AB
= 600 V
= 32 A
= 2.2 V
G
E
IXDP 20N60B IXDP 20N60B D1
Symbol Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 20 kW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 32 A
TC= 90°C 20 A
TC= 90°C, tp =1 ms 40 A
G
E
G = Gate, E = Emitter
C = Collector , TAB = Collector
Features
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●
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●
●
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RBSOA VGE= ±15 V, TJ = 125°C, RG = 22 W ICM = 60 A
Clamped inductive load, L = 30 µH V
t
SC
VGE= ±15 V, VCE = 600 V, TJ = 125°C 10 µs
(SCSOA) RG = 22 W, non repetitive
P
C
TC= 25°C IGBT 140 W
CEK
< V
CES
Advantages
●
●
Diode 50 W
Typical Applications
T
J
T
stg
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque 0.4 - 0.6 Nm
-55 ... +150 °C
-55 ... +150 °C
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●
Weight 2g
G
C
E
C (TAB)
NPT IGBT technology
low switching losses
low tail current
no latch up
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Space savings
High power density
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
VGE = 0 V 600 V
IC= 0.4 mA, VCE = V
VCE= V
CES
GE
TJ = 25°C 0.1 mA
TJ = 125°C 0.7 mA
35V
VCE= 0 V, VGE = ± 20 V ± 500 nA
IC= 20 A, VGE = 15 V 2.2 2.8 V
© 2000 IXYS All rights reserved
021
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Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IXDP 20N60 B
IXDP 20N60 BD1
TO-220 AB Outline
C
C
C
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
R
R
ies
oes
res
g
on
off
thJC
thCH
VCE = 25 V, VGE = 0 V, f = 1 MHz 85 pF
IC = 20 A, VGE = 15 V, VCE = 480 V 70 nC
Inductive load, TJ = 125°C
I
= 20 A, VGE = ±15 V,
C
VCE = 300 V, RG = 22 W
Package with heatsink compound 0.5 K/W
800 pF
50 pF
25 ns
30 ns
260 ns
55 ns
0.9 mJ
0.4 mJ
0.9 K/W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
IF = 20 A, VGE = 0 V 2.1 2.4 V
IF = 20 A, VGE = 0 V, TJ = 125°C 1.6 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
I
F
TC = 25°C 25 A
TC = 90°C 15 A
I
RM
t
rr
t
rr
R
thJC
IF = 10 A, -diF/dt = 400 A/µs, VR = 300 V 11 A
VGE = 0 V, TJ = 125°C 80 ns
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
2.5 K/W
© 2000 IXYS All rights reserved
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