IXYS IXDN55N120D1, IXDN55N120 Datasheet

High V oltage IGBT
with optional Diode

Short Circuit SOA Capability
Square RBSOA

IXDN 55N120
IXDN 55N120 D1

C

G

G

V

CES

I

C25

V

CE(sat) typ

C

miniBLOC, SOT-227 B

E153432

= 1200 V
= 100 A
= 2.3 V

G

E

E

IXDN 55N120 IXDN 55N120 D1

E

Symbol Conditions Maximum Ratings
V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

TJ = 25°C to 150°C 1200 V
TJ = 25°C to 150°C; RGE = 20 kW 1200 V

Continuous ±20 V
Transient ±30 V

TC = 25°C 100 A
TC = 90°C 62 A
TC = 90°C, tp = 1 ms 124 A

RBSOA VGE = ±15 V, TJ = 125°C, RG = 22 W ICM = 100 A

Clamped inductive load, L = 30 µH V

t

SC

VGE = ±15 V, VCE = V

, TJ = 125°C 10 µs

CES

CEK

< V

CES

(SCSOA) RG = 22 W, non repetitive
P

C

TC = 25°C IGBT 450 W

Diode 220 W

V

ISOL

T

J

T

stg

M

d

50/60 Hz; I

£ 1 mA 2500 V~

ISOL

-40 ... +150 °C

-40 ... +150 °C

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.

Weight 30 g

C

E = Emitter ①, C = Collector
G = Gate, E = Emitter ①

① Either Emitter terminal can be used as
Main or Kelvin Emitter

Features

●

NPT IGBT technology

●

low saturation voltage

●

low switching losses

●

square RBSOA, no latch up

●

high short circuit capability

●

positive temperature coefficient for
easy paralleling

●

MOS input, voltage controlled

●

optional ultra fast diode

●

International standard package
miniBLOC

Advantages

●

Space savings

●

Easy to mount with 2 screws

●

High power density

E

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

(BR)CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

VGE = 0 V 1200 V
IC = 2 mA, VCE = V
VCE = V

CES

GE

TJ = 25°C 3.8 mA
TJ = 125°C 6 mA

4.5 6.5 V

VCE = 0 V, VGE = ± 20 V ± 500 nA
IC = 55 A, VGE = 15 V 2.3 2.8 V

© 2000 IXYS All rights reserved

Typical Applications

●

AC motor speed control

●

DC servo and robot drives

●

DC choppers

●

Uninteruptible power supplies (UPS)

●

Switch-mode and resonant-mode
power supplies

032

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IXDN 55N120
IXDN 55N120 D1

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

C
C
C

Q
t

d(on)

t

r

t

d(off)

t

f

E
E

R
R

ies

oes

res

g

on

off

thJC

thCK

VCE = 25 V, VGE = 0 V, f = 1 MHz 500 pF

IC = 50 A, VGE = 15 V, VCE = 0.5 V

CES

Inductive load, TJ = 125°C

I

= 55 A, VGE = ±15 V,

C

VCE = 600 V, RG = 22 W

Package with heatsink compound 0.1 K/W

3300 pF

220 pF
240 nC
100 ns

70 ns

500 ns

70 ns

8.4 mJ

6.2 mJ

0.28 K/W

Reverse Diode (FRED) [D1 version only] Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Conditions min. typ. max.
V

F

IF = 55 A, VGE = 0 V 2.4 2.6 V
IF = 55 A, VGE = 0 V, TJ = 125°C 1.9 V

I

F

TC = 25°C 110 A
TC = 90°C 60 A

I

RM

t

rr

t

rr

R

thJC

IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V 40 A
VGE = 0 V, TJ = 125°C 200 ns

IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns

0.6 K/W

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004

V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08

© 2000 IXYS All rights reserved

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