IXYS IXDN409SI, IXDN409CI, IXDD409YI, IXDD409PI, IXDD409CI Datasheet

Features

• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes.

• Latch Up Protected

• High Peak Output Current: 9A Peak

• Operates from 4.5V to 25V

• Ability to Disable Output under Faults

• High Capacitive Load
Drive Capability: 2500pF in <15ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

Applications

• Driving MOSFETs and IGBTs

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

• Pulse Transformer Driver

• Limiting di/dt under Short Circuit

• Class D Switching Amplifiers

First Release

Copyright © IXYS CORPORATION 2002 Patent Pending

General Description

The IXDD409/IXDI409/IXDN409 are high speed high current
gate drivers specifically designed to drive the largest
MOSFETs and IGBTs to their minimum switching time and
maximum practical frequency limits. The IXDD409/IXDI409/
IXDN409 can source and sink 9A of peak current while
producing voltage rise and fall times of less than 30ns. The
input of the drivers are compatible with TTL or CMOS and are
fully immune to latch up over the entire operating range.
Designed with small internal delays, cross conduction/
current shoot-through is virtually eliminated in the IXDD409/
IXDI409/IXDN409. Their features and wide safety margin in
operating voltage and power make the drivers unmatched in
performance and value.

The IXDD409 incorporates a unique ability to disable the
output under fault conditions. When a logical low is forced
into the Enable input, both final output stage MOSFETs
(NMOS and PMOS) are turned off. As a result, the output of
the IXDD409 enters a tristate mode and achieves a Soft Turn­Off of the MOSFET/IGBT when a short circuit is detected.
This helps prevent damage that could occur to the MOSFET/
IGBT if it were to be switched off abruptly due to a dv/dt over­voltage transient.

The IXDN409 is configured as a non-inverting gate driver, and
the IXDI409 is an inverting gate driver.

The IXDD409/IXDI409/IXDN409 are available in the standard 8­pin P-DIP (PI), SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263
(YI) surface-mount packages.

Figure 1A - IXDD409 Functional Diagram

IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI
9 Amp Low-Side Ultrafast MOSFET Driver

Figure 1B - IXDN409 Functional Diagram

Figure 1C - IXDI409 Functional Diagram

Part Number Package Type Temp. Range Configuration

IXDD409PI 8-Pin PDIP
IXDD409SI 8-Pin SOIC
IXDD409YI 5-Pin TO-263
IXDD409CI 5-Pin TO-220

-40°C to +85°C

Non Inverting
With Enable Line

IXDI409PI 8-Pin PDIP
IXDI409SI 8-Pin SOIC
IXDI409YI 5-Pin TO-263
IXDI409CI 5-Pin TO-220

-40°C to +85°C

Inverting

IXDN409PI 8-Pin PDIP
IXDN409SI 8-Pin SOIC
IXDN409YI 5-Pin TO-263
IXDN409CI 5-Pin TO-220

-40°C to +85°C

Non Inverting

Ordering Information

2

IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI

Unless otherwise noted, TA = 25 oC, 4.5V ≤ V

CC

≤ 25V .

All voltage measurements with respect to GND. IXDD409 configured as described in Test Conditions.

Electrical Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

V

IH

High input voltage 3.5 V
VIL Low input voltage 0.8 V
VIN Input voltage range -5 V

CC

+ 0.3 V

IIN Input current

0V ≤ V

IN

≤ V

CC

-10 10

µA

VOH High output voltage V

CC

- 0.025 V
VOL Low output voltage 0.025 V
ROH Output resistance

@ Output high

I

OUT

= 10mA, V

CC

= 18V

0.8 1.5

Ω

ROL Output resistance

@ Output Low

I

OUT

= 10mA, V

CC

= 18V 0.8 1.5

Ω

I

PEAK

Peak output current VCC is 18V

9 A

I

DC

Continuous output

current

Limited by package power
dissipation

2 A

V

EN

Enable voltage range IXDD409 Only - .3 Vcc + 0.3 V

V

ENH

High En Input Voltage IXDD409 Only 2/3 Vcc V

V

ENL

Low En Input Voltage IXDD409 Only 1/3 Vcc V
tR Rise time CL=2500pF Vcc=18V 8 10 15 ns
tF Fall time CL=2500pF Vcc=18V 8 10 15 ns
t

ONDLY

On-time propagation

delay

CL=2500pF Vcc=18V 33 36 40 ns

t

OFFDLY

Off-time propagation

delay

CL=2500pF Vcc=18V 31 33 36 ns

t

ENOH

Enable to output high

delay time

IXDD409 Only, Vcc=18V 52 ns

t

DOLD

Disable to output low

Disable delay time

IXDD409 Only, Vcc=18V 30 ns

VCC Power supply voltage 4.5 18 25 V
ICC Power supply current V

IN

= 3.5V

V

IN

= 0V

V

IN

= + VCC

1 0 3

10
10

mA

µA
µA

Absolute Maximum Ratings (Note 1)

Parameter Value

Supply Voltage 25 V
All Other Pins -0.3 V to VCC + 0.3 V

Power Dissipation, T

AMBIENT

≤25 oC
8 Pin PDIP (PI) 975mW
8 Pin SOIC (SI) 1055mW
TO220 (CI), TO263 (YI) 17W

Derating Factors (to Ambient)

8 Pin PDIP (PI)

7.6mW/oC

8 Pin SOIC (SI)

8.2mW/oC

TO220 (CI), TO263 (YI)

0.14W/oC

Storage Temperature

-65 oC to 150 oC

Lead Temperature (10 sec)

300 oC

Operating Ratings

Parameter Value

Maximum Junction Temperature

150 oC

Operating Temperature Range

-40 oC to 85 oC
Thermal Impedance (Junction To Case)
TO220 (CI), TO263 (YI) (θJC)

0.95 oC/W

Specifications Subject To Change Without Notice

3

IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI
IXDN409PI / 409SI / 409YI / 409CI

Pin Description

SYMBOL FUNCTION DESCRIPTION

VCC Supply Voltage

Positive power-s upply voltage inp ut. This pin provides power to the
entire chip. The range for this voltage is from 4.5V to 25V.

IN Input Input signal-TTL or CMOS compatible.

EN * Enable

The system ena ble pin. T his pin, when dri ven lo w, disabl es the c hip,
forcing high impedance state to the output (IXDD409 Only).

OUT Output

Driver Output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.

GND Ground

The system ground pin. Internally connec ted to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.

Figure 2 - Characteristics Test Diagram

* This pin is used only on the IXDD409, and is N/C on the IXDI409 and IXDN409.
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent

damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures
when handling and assembling this component.

V

IN

8 PIN DIP (PI)

SO8 (SI)

TO220 (CI)
TO263 (YI)

Vcc
OUT
GND
IN
EN *

1
2
3
4
5

Pin Configurations

VCC

IN

EN *

GND

VCC

OUT

GND

OUT

1

2

3

4

8

7

6

5