IXYS IXDN414YM, IXDN414PI, IXDN414CM, IXDN414CI, IXDI414YM Datasheet
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IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
14 Ampere Low-Side Ultrafast MOSFET Drivers
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected Over Entire
Operating Range
• High Peak Output Current: 14A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load
Drive Capability: 15nF in <30ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
General Description
The IXDI414/IXDN414 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and IGBTs
to their minimum switching time and maximum practical
frequency limits. The IXDI/N414 can source and sink 14A of
peak current while producing voltage rise and fall times of less
than 30ns to drive the latest IXYS MOSFETs & IGBTs. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, a patent-pending circuit virtually
eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further
enhanced by very low, matched rise and fall times.
The IXDN414 is configured as a non-inverting gate driver and
the IXDI414 is an inverting gate driver.
The IXDN414/IXDI414 family are available in standard 8 pin
P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM)
surface-mount packages.
Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram
Vcc
P
N
IN
GND
* Patent Pending
Copyright © IXYS CORPORATION 2001
ANTI-CROSS
CONDUCTION
CIRCUIT *
Vcc
OUT
GND
First Release
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram
Vcc
IN
GND
Pin Description And Configuration
SYMBOL FUNCTION DESCRIPTION
VCC Supply Voltage
IN Input Input signal-TTL or CMOS compatible .
OUT Output
GND Ground
VCC
1
IN
2
NC
3
GND
4
8 PIN DIP (PI)
I
X
D
X
4
1
4
VCC
OUT
OUT
GND
Vcc
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT
N
GND
Positive power-supply voltage input. This pin provides power to the
entire chip. The rang e for this voltage is from 4.5V to 25V.
Driver Output. For application purposes, this pin is connected via an
external resistor to a Gate of a MOSFET/IGBT .
The system ground pin. Internally connected to all circuitry, this pin
provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.
IXDX414CI
8
7
6
5
1
2
3
4
5
Vcc
OUT
GND
IN
NC
IXDX414YI
TO220 (CI, CM)
TO263 (YI, YM)
* Patent Pending
ORDERING INFORMATION
Part Number Package Type Temp. Range Configuration
IXDN414PI 8-Pin PDIP
IXDN414CI 5-Pin TO-220
IXDN414CM 5-Pin TO-220
IXDN414YI 5-Pin TO-263
IXDN414YM 5-Pin TO-263
IXDI414PI 8-Pin PDIP
IXDI414CI 5-Pin TO-220
IXDI414CM 5-Pin TO-220
IXDI414YI 5-Pin TO-263
IXDI414YM 5-Pin TO-263
NOTE: Mounting or solder tabs on all packages are connected to ground
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-55°C to +125°C
-40°C to +85°C
-55°C to +125°C
2
Non Inverting
Inverting
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Absolute Maximum Ratings (Note 1)
Parameter Value
Supply Voltage 25V
All Other Pins
Power Dissipation
T
≤85oC: TO220 (CI), TO263 (YI)
CASE
≤125oC: TO220 (CM), TO263 (YM)
T
CASE
Power Dissipation, T
8 Pin PDIP (PI) 975mW
TO220 (CI, CM), TO263 (YI, YM) 2W
Derating Factors (to Ambient)
8 Pin PDIP (PI)
TO220 (CI, CM), TO263 (YI, YM)
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
AMBIENT
≤25oC
-0.3V to
VCC + 0.3V
16W
16W
7.6mW/oC
0.1W/oC
-65oC to 150oC
300oC
Operating Ratings
Parameter Value
Maximum Junction Temperature
Operating Temperature Range
Thermal Impedance (Junction To Case)
TO220 (CI, CM),
TO263 (YI, YM) (θ
)
JC
150oC
-40oC to 85oC
0.55oC/W
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ V
All voltage measurements with respect to GND. Device configured as described in Test Conditions.
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
High input voltage 3.5 V
VIL Low input voltage 0.8 V
VIN Input voltage range -5 V
IIN Input current
VOH High output voltage V
VOL Low output voltage 0.025 V
ROH Output resistance
@ Output high
ROL Output resistance
@ Output Low
I
Peak output current VCC is 18V
PEAK
I
Continuous output
DC
current
tR Rise time
tF Fall time
t
On-time propagation
ONDLY
delay
t
Off-time propagation
OFFDLY
delay
(1)
C
(1)
C
(1)
(1)
VCC Power supply voltage 4.5 18 25 V
ICC Power supply current V
(1)
See Figures 3a and 3b
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device.
Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The
guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may
affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling
and assembling this component.
Specifications subject to change without notice
≤ 25V .
CC
CC
0V ≤ V
IN
V
≤
CC
-10 10
- 0.025 V
CC
I
= 10mA, V
OUT
CC
= 18V
600 1000
I
= 10mA, V
OUT
= 18V 600 1000
CC
14 A
8 Pin Dip (PI)
(Limited by pkg power dissipat ion)
3 4 A
TO220 (CI), TO263 (YI)
=15nF Vcc=18V 22 27 ns
L
=15nF Vcc=18V 20 25 ns
L
=15nF Vcc=18V 30 33 ns
C
L
C
=15nF Vcc=18V 31 34 ns
L
IN
V
IN
V
IN
= 3.5V
= 0V
= + VCC
1 0 3
+ 0.3 V
10
10
A
µ
mΩ
mΩ
A
mA
A
µ
A
µ
3
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