IXYS IXDP35N60B, IXDH35N60B, IXDH35N60BD1 Datasheet
IGBT
with optional Diode
High Speed,
Low Saturation V oltage
IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1
C
C
V
CES
I
C25
V
CE(sat) typ
= 600 V
= 60 A
= 2.1 V
TO-247 AD IXDH ...
G
E
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
G
E
Symbol Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 20 kW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 60 A
TC= 90°C 35 A
TC= 90°C, tp =1 ms 70 A
RBSOA VGE= ±15 V, TJ = 125°C, RG = 10 W ICM = 110 A
Clamped inductive load, L = 30 µH V
t
SC
VGE= ±15 V, VCE = 600 V, TJ = 125°C 10 µs
CEK
< V
CES
(SCSOA) RG = 10 W, non repetitive
P
C
TC= 25°C IGBT 250 W
Diode 80 W
T
J
T
stg
-55 ... +150 °C
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
G
C
E
C (TAB)
TO-220 AB IXDP ...
G
C
E
G = Gate, E = Emitter
C = Collector , TAB = Collector
C (TAB)
Features
●
NPT IGBT technology
●
low switching losses
●
low tail current
●
no latch up
●
short circuit capability
●
positive temperature coefficient for
easy paralleling
●
MOS input, voltage controlled
●
optional ultra fast diode
●
International standard package
M
d
Weight 6g
Mounting torque TO-220 0.4 - 0.6 Nm
TO-247 0.8 - 1.2 Nm
Advantages
●
●
Symbol Conditions Characteristic Values
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V 600 V
IC= 0.7 mA, VCE = V
VCE= V
CES
GE
TJ = 25°C 0.1 mA
TJ = 125°C 1 mA
35V
VCE= 0 V, VGE = ± 20 V ± 500 nA
IC= 35 A, VGE = 15 V 2.2 2.7 V
Typical Applications
●
●
●
●
●
© 2000 IXYS All rights reserved
Space savings
High power density
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
021
1 - 4
IXDP 35N60 B IXDH 35N60 B
IXDH 35N60 BD1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C
C
C
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
R
R
R
ies
oes
res
g
on
off
thJC
thCH
thCH
VCE = 25 V, VGE = 0 V, f = 1 MHz 150 pF
IC = 35 A, VGE = 15 V, VCE = 480 V 120 nC
Inductive load, TJ = 125°C
I
= 35 A, VGE = ±15 V,
C
VCE = 300 V, RG = 10 W
TO 247 Package with heatsink compound 0.25 K/W
TO 220 Package with heatsink compound 0.5 K/W
1600 pF
90 pF
30 ns
45 ns
320 ns
70 ns
1.6 mJ
0.8 mJ
0.5 K/W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
IF = 35 A, VGE = 0 V 2.1 2.4 V
IF = 35 A, VGE = 0 V, TJ = 125°C 1.6 V
I
F
TC = 25°C 45 A
TC = 90°C 25 A
I
RM
t
rr
t
rr
R
thJC
IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V 13 A
VGE = 0 V, TJ = 125°C 90 ns
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
1.6 K/W
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-220 AB Outline
© 2000 IXYS All rights reserved
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
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