IXYS IXDH20N120D1, IXDH20N120 Datasheet
High V oltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
IXDH 20N120 D1
C
C
V
CES
I
C25
V
CE(sat) typ
TO-247 AD
= 1200 V
= 38 A
= 2.4 V
G
E
IXDH 20N120 IXDH 20N120 D1
Symbol Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
TJ = 25°C to 150°C 1200 V
TJ = 25°C to 150°C; RGE = 20 kW 1200 V
Continuous ±20 V
Transient ±30 V
TC = 25°C 38 A
TC = 90°C 25 A
TC = 90°C, tp = 1 ms 50 A
G
E
G = Gate, E = Emitter
C = Collector , TAB = Collector
Features
●
●
●
●
●
●
●
●
●
RBSOA VGE = ±15 V, TJ = 125°C, RG = 82 W ICM = 35 A
Clamped inductive load, L = 30 µH V
t
SC
VGE = ±15 V, VCE = V
CES
(SCSOA) RG = 82 W, non repetitive
P
C
TC = 25°C IGBT 200 W
, TJ = 125°C 10 µs
CEK
< V
CES
Advantages
●
●
Diode 75 W
Typical Applications
T
J
T
stg
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque 0.8 - 1.2 Nm
-55 ... +150 °C
-55 ... +150 °C
●
●
●
●
●
Weight 6g
G
C
E
C (TAB)
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Space savings
High power density
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
VGE = 0 V 1200 V
IC = 0.6 mA, VCE = V
VCE = V
CES
GE
TJ = 25°C 1 mA
TJ = 125°C 2 mA
4.5 6.5 V
VCE = 0 V, VGE = ± 20 V ± 500 nA
IC = 20 A, VGE = 15 V 2.4 3 V
© 2000 IXYS All rights reserved
031
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Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IXDH 20N120
IXDH 20N120 D1
TO-247 AD Outline
C
C
C
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
R
R
ies
oes
res
g
on
off
thJC
thCH
VCE = 25 V, VGE = 0 V, f = 1 MHz 150 pF
IC = 20 A, VGE = 15 V, VCE = 0.5 V
CES
Inductive load, TJ = 125°C
I
= 20 A, VGE = ±15 V,
C
VCE = 600 V, RG = 82 W
Package with heatsink compound 0.25 K/W
1000 pF
70 pF
70 nC
100 ns
75 ns
500 ns
70 ns
3.1 mJ
2.4 mJ
0.63 K/W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
IF = 20 A, VGE = 0 V 2.6 2.8 V
IF = 20 A, VGE = 0 V, TJ = 125°C 2.1 V
I
F
TC = 25°C 33 A
TC = 90°C 20 A
I
RM
t
rr
t
rr
R
thJC
IF = 20 A, -diF/dt = 400 A/µs, VR = 600 V 15 A
VGE = 0 V, TJ = 125°C 200 ns
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
1.6 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2000 IXYS All rights reserved
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