IXDN404 / IXDI404 / IXDF404
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 0.5A
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 35V
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Limiting di/dt Under Short Circuit
General Description
The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere
CMOS high speed MOSFET drivers. Each output can source
and sink 4A of peak current while producing voltage rise and
fall times of less than 15ns to drive the latest IXYS MOSFETs
and IGBT's. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating
range. A patent-pending circuit virtually eliminates CMOS
power supply cross conduction and current shoot-through.
Improved speed and drive capabilities are further enhanced by
very low, matched rise and fall times.
The IXDN404 is configured as a dual non-inverting gate driver,
the IXDI404 is a dual inverting gate driver, and the IXDF404 is a
dual inverting + non-inverting gate driver.
The IXDN404/IXDI404/IXDF404 family are available in the
standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16)
packages. For enhanced thermal performance, the SOP-8 and
SOP-16 are also available in a package with an exposed
grounded metal back as the SI and SI-16 repectively.
Ordering Information
Part Number Package Type Temp. Range Configuration
IXDN404PI 8-Pin PDIP
IXDN404SI 8-Pin SOIC with Grounded Metal Back
IXDN404SIA 8-Pin SOIC
IXDN404SI-16 16-Pin SOIC with Grounded Metal Back
IXDN404SIA-16 16-Pin SOIC
IXDI404PI 8-Pin PDIP
IXDI404SI 8-Pin SOIC with Grounded Metal Back
IXDI404SIA 8-Pin SOIC
IXDI404SI-16 16-Pin SOIC with Grounded Metal Back
IXDI404SIA-16 16-Pin SOIC
IXDF404PI 8-Pin PDIP
IXDF404SI 8-Pin SOIC with Grounded Metal Back
IXDF404SIA 8-Pin SOIC
IXDF404SI-16 16-Pin SOIC with Grounded Metal Back
IXDF404SIA-16 16-Pin SOIC
NOTE: Mounting or solder tabs on all packages are connected to ground
Copyright © IXYS CORPORATION 2004
-55°C to
+125°C
-55°C to
+125°C
-55°C to
+125°C
First Release
Dual Non
Inverting
Dual Inverting
Inverting +
Non Inverting
DS99018B(08/04)
IXDN404 / IXDI404 / IXDF404
Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
Vcc
P
OUT A
N
P
OUT B
N
IN A
IN B
GN
NTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram
Vcc
P
OUT A
N
IN A
NTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT B
N
IN B
GN
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
Vcc
P
OUT A
N
P
OUT B
N
* Patent Pending
IN A
IN B
GN
NTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
2
IXDN404 / IXDI404 / IXDF404
Absolute Maximum Ratings (Note 1)
Parameter
Supply Voltage 40V
All Other Pins -0.3V to VCC + 0.3V
Junction Temperature
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
Thermal Resistance (Junction to Case) (θ
8 Pin SOIC (SI)
16 Pin SOIC (SI-16)
alue
150oC
-65oC to 150oC
300oC
)
10 K/W
10 K/W
JC
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ V
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
≤ 35V .
CC
Operating Ratings
Parameter Value
Operating Temperature Range
Thermal Resistance (To Ambient)
8 Pin PDIP (PI) (θJA) 120 K/W
8 Pin SOIC (SIA) 110 K/W
16 Pin SOIC (SIA-16) (θ
θ
with heat sink **
JA
Heat sink area of 1 cm
8 Pin SOIC 95 K/W
16 Pin SOIC-CT 95 K/W
Heat sink area of 3 cm
8 Pin SOIC 85 K/W
16 Pin SOIC-CT 85 K/W
** Device soldered to metal back pane. Heat sink area is 1 oz.
copper on 1 side of 0.06" thick FR4 PC board.
) 110 K/W
JA
2
2
-55 oC to 125 oC
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
VIL Low input voltage
VIN Input voltage range -5 V
IIN Input current
High input voltage
4.5V ≤ V
4.5V ≤ V
0V ≤ V
IN
CC
CC
≤
V
18V
≤
18V
≤
CC
2.5 V
0.8 V
+ 0.3 V
CC
-10 10
A
µ
VOH High output voltage V
- 0.025 V
CC
VOL Low output voltage 0.025 V
ROH Output resistance
@ Output High
ROL Output resistance
V
CC
= 18V
2 2.5
V
= 18V 1.5 2
CC
Ω
Ω
@ Output Low
I
Peak output current VCC = 18V
PEAK
4 A
I
Continuous output
DC
1 A
current
tR Rise time CL=1800pF Vcc=18V 16 18 ns
tF Fall time CL=1800pF Vcc=18V 13 17 ns
t
On-time propagation
ONDLY
CL=1800pF Vcc=18V 36 40 ns
delay
t
Off-time propagation
OFFDLY
CL=1800pF Vcc=18V 35 39 ns
delay
VCC Power supply voltage 4.5 18 35 V
I
CC
Power supply current V
Specifications Subject To Change Without Notice
IN
V
IN
V
IN
= 3.5V
= 0V
= + VCC
1 0 3
10
10
mA
A
µ
A
µ
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
IXDN404 / IXDI404 / IXDF404
Electrical Characteristics
Unless otherwise noted, temperature over -55oC to 150oC, 4.5V ≤ V
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
VIL Low input voltage
High input voltage
4.5V ≤ V
4.5V ≤ V
CC
CC
VIN Input voltage range -5 V
IIN Input current
0V ≤ V
IN
≤
VOH High output voltage V
VOL Low output voltage 0.025 V
ROH Output resistance
@ Output High
ROL Output resistance
V
= 18V
CC
V
= 18V 2
CC
@ Output Low
I
Peak output current VCC = 18V
PEAK
I
Continuous output
DC
1 A
current
tR Rise time CL=1000pF Vcc=18V 11 ns
tF Fall time CL=1000pF Vcc=18V 13 ns
t
On-time propagation
ONDLY
CL=1000pF Vcc=18V 60 ns
delay
t
Off-time propagation
OFFDLY
CL=1000pF Vcc=18V 59 ns
delay
VCC Power supply voltage 4.5 18 35 V
I
CC
Power supply current V
Specifications Subject To Change Without Notice
IN
V
IN
V
IN
= 3.5V
= 0V
= + VCC
V
18V
≤
18V
≤
CC
≤ 35V .
CC
2.4 V
0.8 V
+ 0.3 V
CC
-10 10
- 0.025 V
CC
3.4
A
µ
Ω
Ω
3.2 A
1 0 3
10
10
mA
A
µ
A
µ
4