IXYS IXDD408YI, IXDD408PI, IXDD408CI, IXDD408SI Datasheet

IXDD408PI / 408SI / 408YI / 408CI

8 Amp Low-Side Ultrafast MOSFET Driver

Features

• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes.

• Latch Up Protected

• High Peak Output Current: 8A Peak

• Operates from 4.5V to 25V

• Ability to Disable Output under Faults

• High Capacitive Load
Drive Capability: 2500pF in <15ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

Applications

• Driving MOSFETs and IGBTs

• Limiting di/dt under Short Circuit

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

• Pulse Transformer Driver

• Class D Switching Amplifiers

General Description

The IXDD408 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and
IGBTs to their minimum switching time and maximum
practical frequency limits. The IXDD480 can source and
sink 8A of peak current while producing voltage rise and
fall times of less than 30ns. The input of the driver is
compatible with TTL or CMOS and is fully immune to
latch up over the entire operating range. Designed with
small internal delays, cross conduction/current shoot­through is virtually eliminated in the IXDD408. Its features
and wide safety margin in operating voltage and power
make the IXDD408 unmatched in performance and value.

The IXDD408 incorporates a unique ability to disable the
output under fault conditions. When a logical low is
forced into the Enable input, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD408 enters a tristate mode
and achieves a Soft Turn-Off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage
that could occur to the MOSFET/IGBT if it were to be
switched off abruptly due to a dv/dt over-voltage tran­sient.

The IXDD408 is available in the standard 8-pin P-DIP (PI),
SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263 (YI)
surface-mount package.

Figure 1 - Functional Diagram

Copyright © IXYS CORPORATION 2001 Patent Pending

First Release

IXDD408PI/408SI//408YI/408CI

Absolute Maximum Ratings (Note 1)

Parameter Value

Supply Voltage 25 V
All Other Pins -0.3 V to VCC + 0.3 V

Power Dissipation, T

8 Pin PDIP (PI) 975mW
8 Pin SOIC (SI) 1055mW
TO220 (CI), TO263 (YI) 17W

Derating Factors (to Ambient)

8 Pin PDIP (PI)
8 Pin SOIC (SI)

TO220 (CI), TO263 (YI)
Storage Temperature
Lead Temperature (10 sec)

AMBIENT

≤25 oC

7.6mW/oC

8.2mW/oC

0.14W/oC

-65 oC to 150 oC
300 oC

Operating Ratings

Parameter Value

Maximum Junction Temperature
Operating Temperature Range
Thermal Impedance (Junction To Case)

TO220 (CI), TO263 (YI) (θJC)

150 oC

-40 oC to 85 oC

0.95 oC/W

Electrical Characteristics

Unless otherwise noted, TA = 25 oC, 4.5V ≤ V
All voltage measurements with respect to GND. IXDD408 configured as described in Test Conditions.

Symbol Parameter Test Conditions Min Typ Max Units

V

IH

High input voltage 3.5 V
VIL Low input voltage 0.8 V
VIN Input voltage range -5 V
IIN Input current

VOH High output voltage V
VOL Low output voltage 0.025 V
ROH Output resistance

@ Output high
ROL Output resistance

@ Output Low
I

Peak output current VCC is 18V

PEAK

I

Continuous output

DC

current
V

EN

V

High En Input Voltage 2/3 Vcc V

ENH

V

Low En Input Voltage 1/3 Vcc V

ENL

Enable voltage range - .3 Vcc + 0.3 V

tR Rise time CL=2500pF Vcc=18V 12 14 18 ns
tF Fall time CL=2500pF Vcc=18V 13 15 19 ns
t

On-time propagation

ONDLY

delay
t

Off-time propagation

OFFDLY

delay
t

Enable to output high

ENOH

delay time
t

Disable to output low

DOLD

Disable delay time
VCC Power supply voltage 4.5 18 25 V

ICC Power supply current V

Specifications Subject To Change Without Notice

≤ 25V .

CC

+ 0.3 V

CC

0V ≤ V

IN

≤

V

CC

-10 10

µ

A

- 0.025 V

CC

I

= 10mA, V

OUT

CC

= 18V

0.8 1.5

Ω

I

= 10mA, V

OUT

= 18V 0.8 1.5

CC

Ω

8 A

Limited by package power

2 A

dissipation

CL=2500pF Vcc=18V 37 38 42 ns
CL=2500pF Vcc=18V 32 34 38 ns
Vcc=18V 52 ns
Vcc=18V 30 ns

IN

V

IN

V

IN

= 3.5V
= 0V

= + VCC

1 0 3

10
10

mA

µ

A

µ

A

2

Pin Configurations

1

2

3

4

VCC

IN

EN

GND

IXDD408PI/408SI/408YI/408CI

IXDD408CI

VCC

GND

8

7

6

5

1
2
3
4
5

Vcc
OUT
GND
IN
EN

I

X

OUT

D
D

OUT

4
0
8

IXDD408YI

8 PIN DIP (PI)

SO8 (SI)

TO220 (CI)
TO263 (YI)

Pin Description

SYMBOL FUNCTION DESCRIPTION

VCC Supply Voltage

Positiv e power-supply v oltage input. This pin provides power to the
entire chip. T he r ange f or this voltage is from 4.5V to 25V.

IN Input Input si gnal-TTL or CMOS compatible.

EN Enable

OUT Output

The system enabl e pin. This pi n, when driven low, di sables the chi p,
forcing high im pedance stat e to the output.
Driver Output. For application purposes, this pin is connected,
through a resistor, to Gate of a MOSFET/IGBT.
The system ground pin. Inter nally connected t o all circuit ry, this pin

GND Ground

provides ground reference for the entire chip. This pin should be
connected to a low noise analog ground plane for optimum
performance.

Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures
when handling and assembling this component.

Figure 2 - Characteristics Test Diagram

IN

V

3