IXYS DGSS20-05C Datasheet
Gallium Arsenide Schottky Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
IXYS reserves the right to change limits, test conditions and dimensions.
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low forward voltage
l
Very high switching speeds
l
Soft reverse recovery
l
Temperature independent switching
behaviour
l
High temperature operation capability
l
Low cathode to tab capacitance (<15pF)
l
Epoxy meets UL 94V-0
Applications
l
Switched mode power supplies (SMPS)
l
High frequency converters
l
Resonant converters
See DGS20-025A data sheet for
characteristic curves
I
DC
= 13 A
V
RRM
= 500 V
C
JUNCTION
= 26 pF
V
RRM
Q V
RRM
Type
V V
500 250 DGSS 20-025C
Symbol Conditions Maximum Ratings
I
DC
TC = 25°C 13 A
I
FAV
TC = 90°C; 50% Duty cycle; Square wave 8.5 A
I
FSM
TVJ = 25°C; tp = 10 ms, sine 50 A
T
VJ
-55...+175 °C
T
stg
-55...+150 °C
P
tot
TC = 25°C 40 W
V
ISOL
50/60 Hz RMS; I
ISOL
≤ 1 mA 2500 V~
F
C
Mounting force 11...65 / 2.4...11 N / lb
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
I
R
Q T
VJ
= 25°C VR= V
RRM
2mA
TVJ = 150°C VR= V
RRM
10 mA
V
F
R I
F
= 7.5 A; TVJ= 25°C 1.2 1.5 V
IF = 7.5 A; TVJ= 125°C 1.3 V
C
J
VR = 100 V; TVJ= 125°C 26 pF
R
thJC
3.7 K/W
R
thCH
0.6 K/W
98869 (12/01)
© 2001 IXYS All rights reserved
DGSS 20-05C
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
Q Diodes connected in series
R Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
S Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
DGSS 20-05C
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Cathode
2 - Anode/Cathode
3 - Anode
Loading...