Page 1
DGT409BCA
DGT409BCA
Reverse Blocking Gate Turn-off Thyristor
Replaces January 2000 version, DS4414-4.0 DS4414-4.1 February 2002
APPLICATIONS
The DGT409 BCA is a symmetrical GTO designed for
applications which specifically require a reverse blocking
capability, such as current source inverters (CSI). Reverse
recovery ratings and characteristics are included.
FEATURES
■ Reverse Blocking Capability
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ Turn-off Capability Allows Reduction In Equipment Size
And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
ORDERING INFORMATION
Order as: DGT409BCA6565
KEY PARAMETERS
I
TCM
V
DRM/VDRM
dV
/dt 1000V/µs
D
di
/dt 300A/µs
T
1500A
6500V
Outline type code: CA
See Package Details for further information
Fig. 1 Package outline
1/11
Page 2
DGT409BCA
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tj = 115˚C unless staed otherwise
Symbol Parameter Conditions Max.
V
DRM
V
RRM
I
TCM
I
TSM
I2t
/dt
di
T
Repetitive peak off-state voltage
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current 300
IDM = 100mA V6500
I
= 100mA V6500Repetitive peak reverse voltage
RRM
VD = 4300V, diGQ/dt = 20A/µs, CS = 2.0µFA1500Repetitive peak controllable on-state current
10ms half sine.
10ms half sine.
= 3000V, IT = 800A, IFG > 20A, tr > 1.5µsA/µs
V
D
VD = 3000V, RGK ≤ 1.5Ω
dVD/dt
L
Rate of rise of off-state voltage
V
= 3000V, VRG = –2V
D
I
Peak stray inductance in snubber circuit 200 nH
S
= 1500A, VDM = 6000V, dIGQ/dt = 20A/µs, CS = 2µF
T
GATE RATINGS
Symbol Parameter Conditions
Min.
Units
3
3
45 x 10
175 V/µs
1000 V/µs
kA
2
A
s
UnitsMax.
V
RGM
I
FGM
P
FG(AV)
P
RGM
diGQ/dt
t
ON(min)
t
OFF(min)
RGM
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
Continuous reverse gate-cathode current 50 mA-I
This value may be exceeded during turn-off
-
-
-
-
-
-
V
= 16V, No gate cathode resistor
RGM
20
15
-Peak reverse gate voltage
25
70
10
-
15
-
60
-50
V
A
W
kW
A/µs
µs
- µs150
2/11
Page 3
THERMAL RATINGS AND MECHANICAL DATA
DGT409BCA
Symbol Parameter Conditions Max.Min.
Double side cooled
R
th(j-hs)
DC thermal resistance - junction to heatsink
surface
Anode side cooled
Cathode side cooled
R
th(c-hs)
T
T
OP/Tstg
Contact thermal resistance
Virtual junction temperature
vj
Clamping force 12.0kN
With mounting compound
Operating junction/storage temperature range
-
Clamping force
per contact
CHARACTERISTICS
Tj = 115oC unless stated otherwise
Symbol Parameter
TM
On-state voltageV
At 200A peak, I
Conditions
= 4A d.c.
G(ON)
Units
- 0.046oC/W
-
- 0.124
- 0.009
-
-40
11.0
115
115
15.0
o
C/W0.073
o
C/W
o
C/W
o
o
kN
C
C
Min. Max. Units
-4V
I
E
Q
I
RRM
V
I
I
RGM
E
t
t
t
DM
GT
GT
ON
t
d
t
OFF
gs
gf
gq
GQ
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
r
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
V
= 6500V, VRG = 0V - 100 mA
DRM
At V
= 6500V - 100 mA
RRM
VD = 24V, IT = 100A, Tj = 25oC-1V
VD = 24V, IT = 100A, Tj = 25oC-2A
V
= 16V, No gate/cathode resistor
RGM
VD = 3000V
IT = 400A, dIT/dt = 150A/µs
IFG = 20A, tr < 1.5µs
50-
-7µs
mA
mJ2500-
µs3-
- 2500 mJ
µs
µs
µs
µC
I
= 800A, VDM = 3000V
T
Snubber Cap CS = 2µF,
diGQ/dt = 20A/µs
See Figs. 16 and 17
See Figs. 16 and 17
See Figs. 16 and 17
- 3600
Q
I
GQT
GQM
Total turn-off gate charge
Peak reverse gate current
- 7200 µC
- 350 A
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DGT409BCA
0.9x V
D
0.9x I
T
dVD/dt
D
V
T
I
V
DM
V
D
Anode voltage and current
0.1x V
D
t
t
d
r
t
gt
I
dIFG/dt
0.1x I
FG
FG
V
FG
t
w1
0.1x I
0.5x I
Gate voltage and current
Recommended gate conditions to switch off I
I
= 30A
FG
I
= 4A d.c.
G(ON)
t
= 20µs
w1(min)
I
= 270A typical
GQM
di
/dt = 30A/µs
GQ
Q
= 2200µC
GQ
V
= 2V
RG(min)
V
= 15V
RG(max)
GQ
GQM
I
GQM
Q
GQ
= 800A:
TCM
I
DP
V
t
gs
t
gf
t
gq
I
G(ON)
TAIL
V
(RG)BR
RG
V
4/11
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.2 General switching waveforms
Page 5
DGT409BCA
I
T
Q
S
I
RR
15µs
Fig.3 Reverse recovery waveforms
V
R
CURVES
2.0
1.8
1.6
1.4
- (V)
GT
1.2
1.0
0.8
0.6
Gate trigger voltage, V
0.4
0.2
0
–50 –25 0 25 50 75 100 125 150
I
GT
Junction temperature, T
- (˚C)
j
4.0
3.6
3.2
2.8
2.4
2.0
1000
900
800
Gate trigger current, I
- (A)
T
700
600
500
Tj = 25˚C
Tj = 115˚C
1.4
V
GT
GT
1.2
0.8
0.4
0
400
- (A)
300
200
Instantaneous on-state current, I
100
0
0123456 78
Instantaneous on-state voltage, V
- (V)
T
Fig.4 Maximum gate trigger voltage/current vs junction
temperature
Fig.5 Maximum on-state characteristics
5/11
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DGT409BCA
1.5
Conditions:
1.4
T
= 115˚C,
j
V
1.3
- (kA)
1.2
TCM
1.1
= 4300V,
DM
dI
/dt = 20A/µs
GQ
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Maximum permissible turn-off current, I
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.41.2 1.6 1.8 2.0
Snubber capacitance, C
Fig.5 Maximum dependence of I
- (µF)
S
TCM
on C
7.0
Conditions:
6.5
T
= 100˚C,
c
V
= 3500V
R
6.0
- (J)
5.5
OFF
IT = 300A
5.0
4.5
4.0
IT = 150A
3.5
3.0
2.5
2.0
1.5
1.0
Reverse recovery energy per pulse, E
0.5
0
0 20 40 60 80 100 140120 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
S
Fig.6 Maximum reverse recovery energy vs rate of fall of
anode current
4000
Conditions:
T
= 100˚C,
3800
c
V
= 3500V
R
3600
- (µC)
S
3400
IT = 300A
3200
3000
2800
2600
2400
IT = 150A
Reverse recovery stored charge, Q
2200
2000
0 20 40 60 80 100 140120 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.7 Maximum reverse recovery stored charge vs rate of fall
of anode current
800
Conditions:
T
= 100˚C,
c
750
V
= 3500V
R
700
- (A)
RR
650
IT = 300A
600
550
IT = 150A
500
450
400
Peak reverse recovery current, I
350
300
0 20 40 60 80 100 140120 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.8 Maximum reverse recovery current vs rate of fall of
anode current
6/11
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DGT409BCA
0
1
2
3
4
5
6
7
8
0 100 200 300 400 500 600 700
On-state current, I
T
- (A)
Switching time, - (µs)
Conditions:
T
j
= 115˚C, IFG = 20A,
C
S
= 2µF, RS = 10Ω,
V
D
= 3000V, dIT/dt = 150A/s
dI
FG
/dt = 30A/µs
t
r
t
d
2500
Conditions:
T
= 100˚C,
2300
c
V
= 3500V
R
2100
- (kW)
PK
1900
IT = 300A
1700
IT = 150A
1500
1300
1100
900
Peak reverse recovery power, P
700
500
0 20 40 60 80 100 140120 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.9 Maximum reverse recovery power vs rate of fall of
anode current
6000
5500
5000
4500
4000
- (mJ)
ON
Conditions:
T
= 115˚C, IFG = 20A,
j
C
= 2µF, RS = 20Ω,
S
dI
/dt = 150A/µs,
T
dI
/dt = 30A/µs
FG
VD = 4500V
3500
3000
2500
2000
Turn-on energy loss, E
1500
1000
500
0
0 100 200 300 400 500 600 700 800
On-state current, I
- (A)
T
Fig.10 Turn-on energy vs on-state current
VD = 3000V
VD = 1500V
4000
3500
VD = 4500V
3000
- (mJ)
ON
2500
VD = 3000V
2000
1500
Turn-on energy loss, E
1000
500
Fig.11 Turn-on energy vs peak forward gate current Fig.12 Delay time and rise time vs on-state current
VD = 1500V
Conditions:
T
= 115˚C, IT = 400A,
j
C
= 2µF, RS = 20Ω,
S
dI
/dt = 150A/µs,
T
dI
/dt = 30A/µs
FG
0
0102030405060
Peak forward gate current, I
FGM
- (A)
7/11
Page 8
DGT409BCA
9
8
7
Conditions:
T
= 115˚C, IT = 400A,
j
C
= 2µF, RS = 20Ω,
S
dI
/dt = 150A/µs,
T
dI
/dt = 30A/µs,
FG
V
= 3000V
D
6
Rise time -t
r
5
4
Switching time - (µs)
3
Delay time -t
d
2
1
0
0102030405060
Peak forward gate current, I
FGM
- (A)
4500
4000
µF
= 0.5
S
µF
= 2
S
= 2µF
S
3500
- (mJ)
3000
FF
O
= 4500V, C
D
V
V
= 3000V, C
D
= 4500V, C
V
D
2500
= 1500V, C
D
2000
V
1500
Turn-off energy losses, E
1000
500
Conditions:
T
= 115˚C,RS = 20Ω,
j
dI
/dt = 20A/µs, CS = 2µF
GG
0
0 200 400 600 800 1000 1200 1400 1600
On-state current, I
- (A)
T
= 2µF
S
Fig.13 Switching times vs peak forward gate current Fig.14 Maximum turn-off energy vs on-state current
4500
V
= 4500V
D
4000
3500
V
- (mJ)
3000
FF
O
= 3000V
D
2500
2000
V
= 1500V
D
1500
Turn-off energy loss, E
1000
500
Conditions:
T
= 115˚C, RS = 10Ω,
j
I
= 800A, C
T
= 2µF
S
0
0102030405060
Rate of rise of reverse gate current, dI
/dt - (A/µs)
GQ
Fig.15 Turn-off energy vs rate of rise of reverse
gate current
18
t
gs
16
14
12
- (µs)
gs
10
t
gf
8
6
1.5
Gate storage time, t
4
1.0
Conditions:
T
= 115˚C, CS = 2µF,
2
0
j
R
= 20Ω, dIGQ/dt = 20A/µs
S
V
= 3000V
DM
0.5
0
0 100 200 300 400 500 600 700 800
Rate of rise of reverse gate current, dI
/dt - (A/µs)
GQ
Fig.16 Gate storage time and fall time vs on-state current
4.5
4.0
3.5
Gate fall time, t
3.0
2.5
gf
2.0
- (µs)
8/11
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DGT409BCA
30
28
26
24
22
20
- (µs)
gs
18
t
16
14
12
10
Gate storage time, t
8
6
Conditions:
T
= 115˚C, CS = 2µF,
4
j
R
= 10Ω, IT = 800A,
S
2
V
= 3000V
DM
0
t
01020304050607080
Rate of rise of reverse gate current, dI
/dt - (A/µs)
GQ
Fig.17 Gate storage time and fall time vs rate of rise of
reverse gate current
3.0
2.8
2.6
2.4
2.2
gf
2.0
1.8
1.6
1.4
1.2
1.0
gs
0.8
0.6
0.4
0.2
0
0.1
- (°C/kW )
Gate fall time, t
0.01
th (j-c)
gf
- (µs)
0.001
Transient thermal impedance, Z
0.0001
0.001 0.01 10.1
Time - (s)
Fig.18 Maximum (limit) transient thermal impedance -
double side cooled
dc
10 100
9/11
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DGT409BCA
PACKAGE DETAILS
For further package information, please contact the Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT
SCALE.
2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep (in both electrodes)
Auxiliary cathode
20˚
Gate
Cathode
Ø51 nom
Ø38 nom
36 nom
29.5 nom
Ø38 nom
Ø56.0 max
Ø63 nom
Nominal weight: 350g
Clamping force: 12kN ±10%
Lead length: 505mm
Package outine type code: CA
Anode
ASSOCIATED PUBLICATIONS
Title Application Note
Number
Calculating the junction temperature or power semiconductors AN4506
GTO gate drive units AN4571
Recommendations for clamping power semiconductors AN4839
Use of VTO, rT on-state characteristic AN5001
Impoved gate drive for GTO series connections AN5177
10/11
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DGT409BCA
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
CUSTOMER SERVICES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS4414-4 Issue No. 4.1 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
11/11
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