ISSI IS61C1024L-25TI, IS61C1024L-25T, IS61C1024L-25KI, IS61C1024L-25K, IS61C1024L-25HI Datasheet

IS61C1024
IS61C1024L

128K x 8 HIGH-SPEED
CMOS STATIC RAM

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.

DESCRIPTION

The ISSI IS61C1024 and IS61C1024L are very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They
are fabricated using

ISSI

's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and low
power consumption devices.

When

CE1

is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable
inputs,

CE1

and CE2. The active LOW Write Enable (WE)

controls both writing and reading of the memory.
The IS61C1024 and IS61C1024L are available in 32-pin

300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,
8 x 13.4) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

CE1

OE
WE

512 x 2048

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

CE2

FEATURES

• High-speed access time: 12, 15, 20, 25 ns

• Low active power: 600 mW (typical)

• Low standby power: 500 µW (typical) CMOS

standby

• Output Enable (OE) and two Chip Enable
(

CE1

and CE2) inputs for ease in applications

• Fully static operation: no clock or refresh
required

• TTL compatible inputs and outputs

• Single 5V (±10%) power supply

• Low power version available: IS61C1024L

• Commercial and industrial temperature ranges
available

MAY 1999

ISSI

®

Integrated Silicon Solution, Inc. — 1-800-379-4774

1

SR028-1K
05/12/99

IS61C1024
IS61C1024L

2

Integrated Silicon Solution, Inc. — 1-800-379-4774

SR028-1J

11/03/98

ISSI

®

TRUTH TABLE

Mode

WEWE

WEWE

WE

CE1CE1

CE1CE1

CE1

CE2

OEOE

OEOE

OE

I/O Operation Vcc Current

Not Selected X H X X High-Z ISB1, ISB2
(Power-down) X X L X High-Z ISB1, ISB2

Output Disabled H L H H High-Z ICC1, ICC2
Read H L H L DOUT ICC1, ICC2
Write L L H X DIN ICC1, ICC2

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

NC

A16
A14
A12

A7
A6
A5
A4
A3
A2
A1

A0
I/O0
I/O1
I/O2

GND

VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3

PIN CONFIGURATION

32-Pin SOJ

PIN DESCRIPTIONS

A0-A16 Address Inputs

CE1

Chip Enable 1 Input

CE2 Chip Enable 2 Input

OE

Output Enable Input

WE

Write Enable Input
I/O0-I/O7 Input/Output
Vcc Power
GND Ground

OPERATING RANGE

Range Ambient Temperature VCC

Commercial 0°C to +70°C 5V ± 10%
Industrial –40°C to +85°C 5V ± 10%

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

A11

A9
A8

A13

WE

CE2

A15

VCC

NC
A16
A14
A12

A7
A6
A5
A4

OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3

PIN CONFIGURATION

32-Pin TSOP (Type 1) (T) and sTSOP (Type 1) (H)

IS61C1024
IS61C1024L

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

SR028-1K
05/12/99

ISSI

®

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TBIAS Temperature Under Bias –55 to +125 °C
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.

CAPACITANCE

(1,2)

Symbol Parameter Conditions Max. Unit

CIN Input Capacitance VIN = 0V 5 pF
COUT Output Capacitance VOUT = 0V 7 pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

A = 25°C, f = 1 MHz, Vcc = 5.0V.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions Min. Max. Unit

VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage

(1)

–0.3 0.8 V

ILI Input Leakage GND ≤ VIN ≤ VCC Com. –2 2 µA

Ind. –5 5

ILO Output Leakage GND ≤ VOUT ≤ VCC Com. –2 2 µA

Outputs Disabled Ind. –5 5

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

IS61C1024
IS61C1024L

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

SR028-1J

11/03/98

ISSI

®

IS61C1024 POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-12 ns -15 ns -20 ns -25 ns

Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit

ICC1 Vcc Operating VCC = VCC MAX., CE = VIL Com. — 85 — 85 — 85 — 85 mA

Supply Current IOUT = 0 mA, f = 0 Ind. — 110 — 110 — 110 — 110

ICC2 Vcc Dynamic Operating VCC = VCC MAX., CE = VIL Com. — 170 — 160 — 150 — 140 mA

Supply Current IOUT = 0 mA, f = fMAX Ind. — 180 — 170 — 160 — 150

ISB1 TTL Standby Current VCC = VCC MAX., Com. — 40 — 40 — 40 — 40 mA

(TTL Inputs) VIN = VIH or VIL Ind. — 60 — 60 — 60 — 60

CE1

≥ VIH, f = 0 or

CE2 ≤ VIL, f = 0

ISB2 CMOS Standby VCC = VCC MAX., Com. — 30 — 30 — 30 — 30 mA

Current (CMOS Inputs)

CE1

≤ VCC – 0.2V, Ind. — 40 — 40 — 40 — 40
CE2 ≤ 0.2V
VIN > VCC – 0.2V, or
VIN ≤ 0.2V, f = 0

Note:

1. At f = f

MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

IS61C1024L POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-15 ns -20 ns -25 ns

Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit

ICC1 Vcc Operating VCC = VCC MAX., CE = VIL Com. — 85 — 85 — 85 mA

Supply Current IOUT = 0 mA, f = 0 Ind. — 110 — 110 — 110

ICC2 Vcc Dynamic Operating VCC = VCC MAX., CE = VIL Com. — 160 — 150 — 140 mA

Supply Current IOUT = 0 mA, f = fMAX Ind. — 170 — 160 — 150

ISB1 TTL Standby Current VCC = VCC MAX, Com. — 40 — 40 — 40 mA

(TTL Inputs) VIN = VIH or VIL Ind. — 60 — 60 — 60

CE1

≥ VIH, f = 0 or

CE2 ≤ VIL, f = 0

ISB2 CMOS Standby VCC = VCC MAX., Com. — 500 — 500 — 500 µA

Current (CMOS Inputs)

CE1

≤ VCC – 0.2V, Ind. — 750 — 750 — 750
CE2 ≤ 0.2V
VIN > VCC – 0.2V, or
VIN ≤ 0.2V, f = 0

Note:

1. At f = f

MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.