Datasheet IRF6721SPbF Datasheet (IRF) [ru]

PD - 96133A
IRF6721SPbF
IRF6721STRPbF
DirectFETPower MOSFET
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX ST MQ MX MT MP
Description
The IRF6721SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack­age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Typical values (unless otherwise specified)
V
DSS
30V max ±20V max
Q
g tot
Q
V
gd
GS
R
DS(on)
R
5.1m@ 10V 8.5m@ 4.5V
Q
gs2
Q
rr
Q
oss Vgs(th)
DS(on)
11nC 3.7nC 1.3nC 19nC 7.9nC 1.9V
SQ
DirectFET ISOMETRIC
The IRF6721SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6721SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter Units
V
DS
V
GS
@ TA = 25°C
I
D
ID @ TA = 70°C
@ TC = 25°C
I
D
I
DM
E
AS
I
AR
25
)
20
m
(
) n
15
o
( S D
R
10
l a c
i p
5
y T
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
TJ = 25°C
0
0 5 10 15 20
Drain-to-Source Voltage V Gate-to-Source Voltage Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V
Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
TJ = 125°C
V
Gate -to -Source Voltage (V)
GS,
g
g
@ 10V
GS
@ 10V
GS
@ 10V
GS
ID = 14A
h
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website.Surface mounted on 1 in. square Cu board, steady state.
e e f
)
14.0
V
( e
g a
t
l o V
e c
r u o S
­o
t
­e
t a
G ,
S G
V
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
T
ID= 11A
12.0
10.0
8.0
6.0
4.0
2.0
0.0 0 4 8 121620242832
QG, Total Gate Charge (nC)
measured with thermocouple mounted to top (Drain) of part.
C
Repetitive rating; pulse width limited by max. junction temperature. Starting T
= 25°C, L = 1.1mH, RG = 25, I
J
Max.
30
±20
14 11 60
110
62 11
VDS= 24V
VDS= 15V
AS
A
mJ
A
= 11A.
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04/30/09
IRF6721SPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
∆ΒV
V
R
V
I
DSS
I
GSS
DS(on)
GS(th)
GS(th)
DSS
/T
/T
gfs Forward Transconductance 25 ––– ––– S Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-to-Source Breakdown Voltage 30 ––– ––– V
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
J
Static Drain-to-Source On-Resistance ––– 5.1 7.3
m
––– 8.5 10.9
Gate Threshold Voltage 1.4 1.9 2.4 V
Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C
J
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Total Gate Charge ––– 11 17
Pre-Vth Gate-to-Source Charge ––– 2.9 –––
Post-Vth Gate-to-Source Charge ––– 1.3 ––– nC
Gate-to-Drain Charge ––– 3.7 –––
Gate Charge Overdrive ––– 3.1 ––– See Fig. 15 Switch Charge (Q
+ Qgd)
gs2
––– 4.9 –––
Output Charge ––– 7.9 ––– nC
Gate Resistance ––– 2.1 3.7
Turn-On Delay Time ––– 7.8 –––
Rise Time ––– 8.9 ––– ns
Turn-Off Delay Time ––– 9.3 –––
Fall Time ––– 5.3 –––
Input Capacitance ––– 1430 –––
Output Capacitance ––– 370 ––– pF
Reverse Transfer Capacitance ––– 140 –––
Parameter Min. Typ. Max. Units
Continuous Source Current ––– ––– 52
(Body Diode) A
Pulsed Source Current ––– ––– 110
(Body Diode)
Diode Forward Voltage ––– 0.80 1.0 V
Reverse Recovery Time ––– 17 26 ns
Reverse Recovery Charge ––– 19 29 nC
g
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I
= 10V, ID = 14A
V
GS
VGS = 4.5V, ID = 11A
VDS = VGS, ID = 25µA
= 24V, VGS = 0V
V
DS
V
= 24V, VGS = 0V, TJ = 125°C
DS
= 20V
V
GS
V
= -20V
GS
V
= 15V, ID = 11A
DS
V
= 15V
DS
= 4.5V
V
GS
= 11A
I
D
= 16V, VGS = 0V
V
DS
V
= 15V, VGS = 4.5V
DD
= 11A
I
D
= 1.8
R
G
See Fig. 17 V
= 0V
GS
= 15V
V
DS
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V
T
= 25°C, IF = 11A
J
di/dt = 230A/µs
i
= 1mA
D
i
i
i
i
Notes:
Pulse width ≤ 400µs; duty cycle 2%.
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Absolute Maximum Ratings
PD @TA = 25°C P
@TA = 70°C Power Dissipation
D
PD @TC = 25°C T
P
T
J
T
STG
Power Dissipation
Power Dissipation Peak Soldering Temperature °C Operating Junction and Storage Temperature Range
Thermal Resistance
R R R R R
θJA
θJA
θJA
θJC
θJ-PCB
100
)
10
A J h
t
Z (
1
e s n o p s e
0.1
R l a
m
r e h T
0.01
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted 1.0 –––
Linear Derating Factor
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE ( THERMAL RESPONSE )
IRF6721SPbF
Parameter Units
e e f
Parameter Typ. Max. Units
fl
el jl kl
e
τ
J
t1 , Rectangular Pulse Duration (sec)
τ
J
τ
1
τ
1
Ci= τi/Ri
Ci= τ i/Ri
R
1
R
1
––– 58
12.5 –––
––– 3.0
R
2
R
2
τ
2
τ
2
Max.
2.2
1.4 42
270
-40 to + 150
20 ––– °C/W
0.017
R
3
Ri (°C/W) τi (sec)
R
3
τ
A
5.276 0.00315
τ
A
τ
3
τ
30.637 0.75858
3
22.090 36.9
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
W
W/°C
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad with large heatsink.
is measured at T
θ
of approximately 90°C.
J
R
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
 Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6721SPbF
1000
)
100
A
( t n e
r
r u
C
10
e c
r u o S
-
1
o
t
­n
i a
r D
,
0.1
D
I
0.01
0.1 1 10 100
Fig 4. Typical Output Characteristics
2.5V
VDS, Drain-to-Source Voltage (V)
TOP 10V
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 25°C
VGS
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
1000
TOP 10V
) A
(
100
t n e
r
r u
C e
c
r
10
u o S
­o
t
­n
i a
r
1
D ,
D
I
2.5V
BOTTOM 2.5V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
VGS
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
1000
V
= 15V
DS
) A
(
t
100
n e
r
r u
C e
c
r u o S
­o
t
­n
i a
r D
,
D
I
60µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
10
TJ = -40°C
1
0.1
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
) F p
( e c n a
t
i c a p a
C ,
C
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
C
C
C
iss
oss
rss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
SHORTED
ds
2.0
ID = 14A
) d e z
i
l a
1.5
m
r o
N
(
) n o
( S D
R l
1.0
a c
i p y T
VGS = 10V
VGS = 4.5V
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
40
35
30
)
m (
25
) n o
(
S
20
D
R l a
15
c
i p y T
10
5
TJ = 25°C
Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V
100
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
0
0 20 40 60 80 100 120
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
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IRF6721SPbF
1000
) A
( t n e
r
r u
C n
i a
r D e
s
r e v e
R ,
D S
I
TJ = 150°C
100
TJ = 25°C
TJ = -40°C
10
1
V
GS
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
= 0V
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
) A
(
40
t n e
r
r u
C
30
n
i a
r D
20
,
D
I
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
250
) J
m
( y
g
r
200
e n E
e h c
150
n a
l a v A
e s
l
100
u P
e
l g n
i
50
S ,
S A
E
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
1000
) A
100
( t n e
r
r u
C
10
e c
r u o S
-
1
o
t
­n
i a
r D ,
D
I
TA = 25°C
0.1
TJ = 150°C
Single Pulse
0.01
0.01 0.10 1.00 10.00 100.00
OPERATION IN THIS AREA LIMITED BY RDS(on)
100µsec
1msec
10msec
DC
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0
) V
( e
g a
t
l o
2.5
V d
l o h s e
r h
t
2.0
e
t a
G
) h
t
( S
G V l a c
i p y T
ID = 25µA
ID = 100µA
ID = 150µA
1.5
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
I
D
TOP 0.82A
1.0A
BOTTOM11A
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6721SPbF
A
0
20K
1K
DUT
Fig 15a. Gate Charge Test Circuit
V
DS
L
15V
L
DRIVER
VCC
Id
Vgs
Qgs2QgdQgodr
Fig 15b. Gate Charge Waveform
t
p
Vds
Vgs(th)
Qgs1
V
(BR)DSS
V
R
GS
G
20V
D.U.T
I
AS
0.01
t
p
Fig 16a. Unclamped Inductive Test Circuit
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
D
D.U.T.
+
V
DD
-
I
AS
Fig 16b. Unclamped Inductive Waveforms
V
DS
90%
+
V
DD
-
10% V
GS
t
d(on)tr
t
d(off)tf
Fig 17a. Switching Time Test Circuit
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Fig 17b. Switching Time Waveforms
IRF6721SPbF
D.U.T
+
-
R
G
+
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
-
Low Leakage Inductance Current Transformer
-
*
dv/dt controlled by R
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
G
+
V
* Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
D.U.T. ISDWaveform
Reverse Recovery Current
D.U.T. VDSWaveform
DD
Re-Applied Voltage
+
**
-
Inductor Curent
*** V
Period
P.W.
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple 5%
= 5V for Logic Level Devices
GS
D =
P. W .
Period
** Reverse Polarity for P-Channel
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFET Board Footprint, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
***
VGS=10V
V
DD
I
SD
G = GATE D = DRAIN S = SOURCE
DD
GS
DD
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IRF6721SPbF
DirectFET
Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DirectFET Part Marking
CODE
MIN
4.75
A B
3.70
2.75
C
0.35
D E
0.48
F
0.78
G
0.88
H
0.78
0.93
K L
2.00
M
0.616
R
0.020
P
0.08
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DIMENSIONS
METRIC
MIN
MAX
4.85
0.187
3.95
0.146
2.85
0.108
0.45
0.014
0.52
0.019
0.82
0.031
0.92
0.035
0.031
0.82
0.97
0.037
2.10
0.079
0.0235
0.676
0.080
0.0008
0.17
0.003
IMPERIAL
MAX
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
0.038
0.083
0.0274
0.0031
0.007
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
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IRF6721SPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel qu antity is 4 800 parts . (ordered as IRF6721STRPBF). For 1000 parts on 7" reel, order IRF 6721STR1 PBF
STAND ARD OP TION (QTY 4800 )
METRIC
MIN
CODE A B C D E F G H
330.0
20.2
12.8
1.5
100.0 N.C
12.4
11.9
MAX N.C N.C
13.2 N.C N.C
18.4
14.4
15.4
REEL DIMENS IONS
IMPER IAL
MIN
MAX
12.992
N.C
0.795
N.C
0.504
0.520
0.059
N.C
3.937
N.C
N.C
0.724
0.488
0.567
0.469
0.606
TR1 OPTION (QTY 1000)
METRIC
MIN
MAX
177.77
N.C
19.06
N.C
13.5
12.8
1.5
N.C
58.72
N.C
N.C
13.50
11.9
12.01
11.9
12.01
MIN
6.9
0.75
0.53
0.059
2.31 N.C
0.47
0.47
IMPERIAL
MAX N.C N.C
0.50 N.C N.C
0.53 N.C N.C
LOADED TAPE FEED DIRECTION
NOTE: CONTR OLLING DIMENSI ONS IN MM
DIMENSI ONS
CODE
A B C D E F G H
METRIC IMPERIAL
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70 N.C
1.60
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
0.319
0.161
0.484
0.219
0.209
0.264 N.C
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
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