IOR IRF7821 User Manual

Applications

A

l High Frequency Point-of-Load

Synchronous Buck Converter for
Applications in Networking &
Computing Systems.

Benefits

l Very Low R
l Low Gate Charge
l Fully Characterized Avalanche Voltage

DS(on)

at 4.5V V

GS

and Current

HEXFET® Power MOSFET

V

DSS

30V 9.1mW@V

1

S

2

S

3

S

4

Top View

8

7

6

5

R

DS(on)

A

D

D

D

DG

PD - 94579B

IRF7821

max Qg(typ.)

= 10V 9.3nC

GS

SO-8

Absolute Maximum Ratings

V

DS

V

GS

@ TA = 25°C

I

D

@ TA = 70°C

I

D

I

DM

PD @TA = 25°C

@TA = 70°C

P

D

T

J

T

STG

Parameter Units

Drain-to-Source Voltage V
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation

Linear Derating Factor W/°C
Operating Junction and °C

Storage Temperature Range

c
f
f

@ 10V

GS

@ 10V

GS

Max.

30

± 20

13.6
11

100

2.5

1.6

0.02

-55 to + 155

A

W

Thermal Resistance

Parameter Typ. Max. Units

R

θJL

R

θJA

Junction-to-Drain Lead
Junction-to-Ambient

fg

g

––– 20 °C/W
––– 50

Notes  through  are on page 10

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1/14/03

IRF7821

/

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

∆ΒV

DSS

R

DS(on)

V

GS(th)

∆V

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 22 ––– ––– S
Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 7.0 9.1

––– 9.5 12.5
Gate Threshold Voltage 1.0 ––– ––– V
Gate Threshold Voltage Coeffic i ent ––– - 4.9 ––– mV/°C
Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 9.3 14
Pre-Vth Gate-to-Source Charge ––– 2.5 –––
Post-Vth Gate-to-Sourc e Charge ––– 0.8 ––– nC
Gate-to-Drain Charge ––– 2.9 –––
Gate Charge Overdrive ––– 3.1 ––– See Fig. 16
Switch Charge (Q

gs2

+ Qgd)

––– 3.7 –––
Output Charge ––– 6.1 ––– nC
Turn-On Delay Time ––– 6.3 –––
Rise Time ––– 2.7 –––
Turn-Off Delay Time ––– 9.7 ––– ns
Fall Time ––– 7.3 –––
Input Capacitance ––– 1010 –––
Output Capacitance ––– 360 ––– pF
Reverse Transfer Capacitance ––– 110 –––

VGS = 0V, ID = 250µA
Reference to 25°C, I
V

mΩ

= 10V, ID = 13A

GS

= 4.5V, ID = 10A

V

GS

V

= VGS, ID = 250µA

DS

= 24V, VGS = 0V

V

DS

V

= 24V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

V

= 15V, ID = 10A

DS

= 15V

V

DS

VGS = 4.5V

= 10A

I

D

V

= 10V, VGS = 0V

DS

V

= 15V, VGS = 4.5V

DD

ID = 10A
Clamped Inductive Load

V

= 0V

GS

V

= 15V

DS

ƒ = 1.0MHz

Conditions

= 1mA

D

e

e

e

Avalanche Characteristics

E

AS

I

AR

Single Pulse Avalanche Energy
Avalanche Current

c

dh

Parameter Units

Typ.

–––
–––

Max.

44
10

mJ

A

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 3.1
(Body Diode) A

I

SM

V

SD

t

rr

Q

rr

Pulsed Source Current ––– ––– 100
(Body Diode)

ch

Diode Forward Voltage ––– ––– 1.0 V
Reverse Recovery Time ––– 28 42 ns
Reverse Recovery Charge ––– 23 35 nC

MOSFET symbol
showing the

integral reverse
p-n junction diode.

TJ = 25°C, IS = 10A, VGS = 0V

= 25°C, IF = 10A, VDD = 10V

T

J

di/dt = 100A/µs

Conditions

e

e

2 www.irf.com

IRF7821

100

)
A

(

t

n

e

r

10

r

u
C
e

c

r

u

o
S

-

o

t

-

1

n

i

a

r
D

,

D

I

2.5V

20µs PULSE WIDTH
Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

100.0

TJ = 150°C

)

Α

(

t

n

e

r

10.0

r

u
C
e

c

r

u

o
S

-

o

t

-

1.0

n

i

a

r
D

,

D

I

0.1

2.0 3.0 4.0 5.0 6.0

TJ = 25°C

V

= 15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V
BOTTOM 2.5V

100

)
A

(

t

n

e

r

r

u
C
e

c

r

10

u

o
S

-

o

t

-

n

i

a

r
D

,

D

I

2.5V

20µs PULSE WIDTH

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V
BOTTOM 2.5V

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

e

c

n

a

t

s

i

s

e
R
n
O
e

c

r

u

o
S

-

o

t

-

n

i

a

r
D

,

)

n

o

(
S
D

R

ID = 13A
V

= 10V

GS

1.5

)

d

e

z

i

l

a
m

r

o
N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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