Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Benefits
l Very Low R
l Low Gate Charge
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
HEXFET® Power MOSFET
V
DSS
30V9.1mW@V
1
S
2
S
3
S
4
Top View
8
7
6
5
R
DS(on)
A
D
D
D
DG
PD - 94579B
IRF7821
maxQg(typ.)
= 10V9.3nC
GS
SO-8
Absolute Maximum Ratings
V
DS
V
GS
@ TA = 25°C
I
D
@ TA = 70°C
I
D
I
DM
PD @TA = 25°C
@TA = 70°C
P
D
T
J
T
STG
ParameterUnits
Drain-to-Source VoltageV
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor W/°C
Operating Junction and°C
Storage Temperature Range
cff
@ 10V
GS
@ 10V
GS
Max.
30
± 20
13.6
11
100
2.5
1.6
0.02
-55 to + 155
A
W
Thermal Resistance
ParameterTyp.Max.Units
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
fg
g
–––20°C/W
–––50
Notes through are on page 10
www.irf.com1
1/14/03
IRF7821
/
Static @ TJ = 25°C (unless otherwise specified)
ParameterMin. Typ. Max. Units
BV
DSS
∆ΒV
DSS
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfsForward Transconductance22––––––S
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage30––––––V
∆T
Breakdown Voltage Temp. Coefficient––– 0.025 –––V/°C
J
Static Drain-to-Source On-Resistance–––7.09.1
–––9.512.5
Gate Threshold Voltage1.0––––––V
Gate Threshold Voltage Coeffic i ent–––- 4.9––– mV/°C
Drain-to-Source Leakage Current––––––1.0µA
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com5
IRF7821
A
)
Ω
30
m
(
e
c
n
25
a
t
s
i
s
e
R
20
n
O
e
c
r
15
u
o
S
o
t
10
-
n
i
a
r
D
5
,
)
n
o
(
S
0
D
R
2.04.06.08.010.0
VGS, Gate-to-Source Voltage (V)
ID = 13A
TJ = 125°C
TJ = 25°C
100
)
J
m
(
y
g
80
r
e
n
E
e
h
c
60
n
a
l
a
v
A
e
40
s
l
u
P
e
l
g
n
i
20
S
,
S
A
E
0
255075100125150
Starting TJ, Junction Temperature (°C)
I
TOP
D
4.5A
8.0A
10A
BOTTOM
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
L
D.U.T
D
V
DD
15V
DRIVER
+
-
V
DD
R
V
20V
V
DS
G
GS
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 13a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DS
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 14a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
I
AS
Fig 13b. Unclamped Inductive Waveforms
t
t
d(on)
f
Fig 14b. Switching Time Waveforms
t
d(off)
t
r
6www.irf.com
IRF7821
D.U.T
+
-
R
G
Current Regulator
Same Type as D.U.T.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
G
Driver Gate Drive
P.W.
D.U.T. ISDWaveform
Reverse
Recovery
+
-
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
GS
+
V
DD
Period
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
= 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Vds
D =
P.W.
Period
VGS=10V
V
DD
I
SD
*
Id
Vgs
12V
.2µF
50KΩ
.3µF
D.U.T.
+
V
DS
-
Vgs(th)
V
GS
3mA
I
G
Current Sampling Resistors
I
Fig 16. Gate Charge Test Circuit
D
Qgs1
Qgs2QgdQgodr
Fig 17. Gate Charge Waveform
www.irf.com7
IRF7821
)
Power MOSFET Selection for Non-Isolated DC/DC Converters
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the R
MOSFET, but these conduction losses are only about
one half of the total losses.
Power losses in the control switch Q1 are given
by;
P
= P
loss
This can be expanded and approximated by;
P
loss
conduction
= I
()
rms
+ I ×
+ Qg× Vg× f
()
Q
+
This simplified loss equation includes the terms Q
and Q
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Q
Fig 16.
the gate driver between the time that the threshold
voltage has been reached and the time the drain current rises to I
gins to change. Minimizing Q
reducing switching losses in Q1.
put capacitance of the MOSFET during every switching cycle. Figure A shows how Q
parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by
the power supply input buss voltage.
which are new to Power MOSFET data sheets.
oss
Q
is a sub element of traditional gate-source
gs2
Q
indicates the charge that must be supplied by
gs2
Q
is the charge that must be supplied to the out-
oss
+ P
2
× R
ds(on )
Q
gd
× Vin× f
i
g
oss
×Vin× f
2
at which time the drain voltage be-
dmax
switching
and Q
gs1
+ P
+ I ×
+ P
drive
Q
gs2
i
gs2
g
, can be seen from
gs2
is a critical factor in
is formed by the
oss
of the
ds(on)
output
× Vin× f
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
= P
loss
conduction
P
= I
loss
+ Qg× Vg× f
+
rms
()
Q
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, R
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Q
verse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
gs2
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and of f there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Q
potential for Cdv/dt turn on.
Figure A: Q
+ P
2
× R
ds(on)()
oss
×Vin× f
2
must be minimized to reduce the
gs1
Characteristic
oss
drive
*
+ P
output
+ Qrr× Vin× f
(
ds(on)
oss
is an im-
and re-
8www.irf.com
SO-8 Package Details
IRF7821
DB
8X b
5
65
4312
e1
CAB
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010]
NOTE S:
1. DIMENSIONING & TOLE RANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIME NS IONS ARE S HOWN IN MILL IMET ER S [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUTL INE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS TH E L E NGTH OF L EAD FOR S OLDE RING TO
A S U BS T RAT E .
y
3X 1.27 [.050]
DIM
MI NMAX
A
.0532
A1
b
c .0075 .0098 0.190.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASI C
.025 BASI C0.635 BASIC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
F OOT P R I NT
8X 0.72 [.028]
MI LL I ME T E R SINCHES
MI NMAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASI C
5.80
6.20
0.25
0.50
0.40
1.27
8°
0°
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSF ET )
DAT E CODE (YWW)
Y = LAS T DIGIT OF T HE YEAR
YWW
XXXX
INTERNATIONAL
F7101
RECT IFIER
LOGO
www.irf.com9
WW = WEEK
LOT CODE
PART NUMBER
IRF7821
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 0.87mH
J
= 10A.
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
R
is measured at TJ approximately 90°C
θ
This product has been designed and qualified for the Industrial market.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/04
10www.irf.com
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