IOR IRF7338 User Manual

PD - 94372C

IRF7338

HEXFET® Power MOSFET

l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel

Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.

N-CHANNEL MOSFET 1

4 P-CHANNEL MOSFET

Top View

N-Ch P-Ch

12V -12V

DSS

0.034Ω 0.150Ω

DS(on)

SO-8

Absolute Maximum Ratings

Parameter

ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.3 -3.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.2 -2.5 I

PD @TA = 25°C Power Dissipation  2.0 W PD @TA = 70°C Power Dissipation  1.3

J, TSTG

Drain-to-Source Voltage 12 -12

Pulsed Drain Current  26 -13

Linear Derating Factor 16 mW/°C Gate-to-Source Voltage ±12  ± 8.0 V Junction and Storage Temperature Range °C

N-Channel P-Channel

Max.

-55 to + 150

Units

Thermal Resistance

Symbol Parameter Typ. Max. Units

θJL

θJA

Junction-to-Drain Lead ––– 20 Junction-to-Ambient  ––– 62.5 °C/W

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IRF7338

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

(BR)DSS

∆V

(BR)DSS

DS(ON)

GS(th)

DSS

GSS

d(on)

d(off)

iss

oss

rss

Drain-to-Source Breakdown Voltage

/∆TJBreakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage N-Ch –– — ±100 nA VGS = ± 12V

Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Parameter Min. Typ. Max. Units Conditions

N-Ch 12 — — VGS = 0V, ID = 250µA P-Ch -12 — — VGS = 0V, ID = -250µA N-Ch — 0.01 — Reference to 25°C, I P-Ch — -0.01 — Reference to 25°C, I

— — 0.034 V

N-Ch

— — 0.060 V — — 0.150 V

P-Ch

— — 0.200 VGS = -2.7V, ID = -1.5A  N-Ch 0.6 — 1.5 V P-Ch -0.40 — -1.0 V N-Ch 9.2 — — V P-Ch 3.5 — — V N-Ch — — 20 V P-Ch — — -1.0 VDS = -9.6 V, VGS = 0V N-Ch — — 50 V P-Ch — — -25 V

P-Ch — — ±100 V N-Ch — — 8.6 P-Ch — — 6.6 N-Ch — — 1.9 P-Ch — — 1.3 N-Ch — — 3.9 P-Ch — — 1.6 N-Ch — 6.0 — P-Ch — 9.6 — N-Ch — 7.6 — P-Ch — 13 — N-Ch — 26 — P-Ch — 27 — N-Ch — 34 — P-Ch — 25 — N-Ch — 640 — P-Ch — 490 — N-Ch — 340 — P-Ch — 80 — N-Ch — 110 — P-Ch — 58 —

V/°C

= 4.5V, ID = 6.0A 

= 3.0V, ID = 2.0A 

Ω

= -4.5V, ID = -2.9A 

= VGS, ID = 250µA

= VGS, ID = -250µA

= 6.0V, ID = 6.0A 

= -6.0V, ID = -1.5A 

= 9.6V, VGS = 0V

µA

= 9.6V, VGS = 0V, TJ = 55°C

= -9.6V, VGS = 0V, TJ = 55°C

= ± 8.0V

N-Channel

= 6.0A, VDS = 6.0V, VGS = 4.5V

P-Channel ID = -2.9A, VDS = -9.6V, VGS = -4.5 V

N-Channel VDD = 6.0V, ID = 1.0A, RG = 6.0Ω,

= 4.5V

P-Channel V

= -6.0V, ID = -2.9A, RG = 6.0Ω,

VGS = -4.5V

N-Channel V

= 0V, VDS = 9.0V, ƒ = 1.0MHz

P-Channel V

= 0V, VDS = -9.0V, ƒ = 1.0KHz

= 1mA

= -1mA



Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

N-Ch — — 6.3 P-Ch — — -3.0 N-Ch — — 26

P-Ch — — -13 N-Ch — — 1.3 T P-Ch — — -1.2 TJ = 25°C, IS = -2.9A, VGS = 0V  N-Ch — 51 76 P-Ch — 37 56 N-Ch — 43 64 P-Ch — 20 30

= 25°C, IS = 1.7A, VGS = 0V 

N-Channel

TJ = 25°C, IF = 1.7A, di/dt = 100A/µs P-Channel 

TJ = 25°C, IF = -2.9A, di/dt = -100A/µs

 Surface mounted on 1 in square Cu board.  The N-channel MOSFET can withstand 15V V

for up to 24 hours over the life of the device.

max

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N-Channel

IRF7338

100

) A

(

u C e

o S

0.1

1.5V

20µs PULSE WIDTH

0.01

0.1 1 10

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP 7 .5 V

4.5V

4.0V

3.5V

3.0V

2.7V

2.0V BOTTOM 1 .5V

100

) A

(

u C e

o S

r D

VGS

TOP 7 .5V

4.5V

4.0V

3.5V

3.0V

2.7V

2.0V B OTT OM 1.5V

1.5V

20µs PULSE WIDTH

0.1

0.1 1 10

Tj = 150°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100.0

) A

(

u C e

o S

r D

1.0 2.0 3.0 4.0

TJ = 25°C

TJ = 150°C

= 10V

20µs PULSE WIDTH

VGS, Gate-to-Source V oltage (V)

Fig 3. Typical Transfer Characteristics

) A

(

10.0

u C

r D

1.0

e R

D S

TJ = 150°C

TJ = 25°C

0.1

0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-toDrain Voltage (V)

Fig 4. Typical Source-Drain Diode

= 0V

Forward Voltage

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IRF7338

N-Channel

2.0

6.3A

I =

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

Fig 5. Normalized On-Resistance

Vs. Temperature

)

0.05

Ω

( e

e R

0.04

n O e

o S

0.03

r D ,

)

( S D

0.02

3.0 4.0 5.0 6.0 7.0 8.0

Gate -to -Source Voltage (V)

GS,

ID = 6.3A

V =

4.5V

)

0.12

Ω

( e

0.10

e R

0.08

n O

0.06

o S

0.04

r D

)

0.02

( S

0.00

= 3.0V

= 4.5V

0 5 10 15 20 25 30

ID , Drain Current (A)

Fig 6. Typical On-Resistance Vs. Drain

Current

) W

( r

e w

o P

0.00 0.00 0.00 0.01 0.10 1.00 10.00

Ti me (sec)

Fig 7. Typical On-Resistance Vs. Gate

Fig 8. Typical Power Vs. Time

Voltage

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