IOR IRF7321D2PbF User Manual

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查询IRF7321D2PBF供应商

l Co-packaged HEXFET® Power

MOSFET and Schottky Diode

l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low V
l Generation 5 Technology
l SO-8 Footprint
l Lead-Free

Description

The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.

Schottky Rectifier

F

PD - 95297

IRF7321D2PbF

FETKY MOSFET & Schottky Diode

A

A

S

G

TM

1

2

3

4

Top View

8

7

6

5

V

= -30V

DSS

R

DS(on)

= 0.062Ω

Schottky Vf = 0.52V

SO-8

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Parameter Maximum Units

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.7 A
ID @ TA = 70°C -3.8
I

DM

PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3

V

GS

dv/dt Peak Diode Recovery dv/dt Á -5.0 V/ns
T

J, TSTG

Pulsed Drain Current À -38

Linear Derating Factor 16 mW/°C
Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to +150 °C

Thermal Resistance Ratings

Parameter Maximum Units

R

θJA

Notes:

Junction-to-Ambient à 62.5 °C/W

 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
 I

≤ -2.9A, di/dt ≤ -77A/µs, V

SD

DD

≤ V

(BR)DSS

, TJ ≤ 150°C

 Pulse width ≤ 300µs – duty cycle ≤ 2%
 Surface mounted on FR-4 board, t ≤ 10sec.

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10/12/04

IRF7321D2PbF

MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

MOSFET Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Schottky Diode Maximum Ratings

If (av) Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25°C

I

SM

Schottky Diode Electrical Specifications

Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C

Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25°C

Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr

( HEXFET is the reg. TM for International Rectifier Power MOSFET's )

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Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA

Static Drain-to-Source On-Resistance

––– 0.042 0.062 VGS = -10V, ID = -4.9A 
––– 0.076 0.098 V

Ω

= -4.5V, ID = -3.6A 

GS

Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance ––– 7.7 ––– S VDS = -15V, ID = -4.9A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V

––– ––– -1.0 V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 55°C

µA

nA

= -24V, VGS = 0V

DS

Total Gate Charge ––– 23 34 ID = -4.9A
Gate-to-Source Charge ––– 3.8 5.7 nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 5.9 8.9 VGS = -10V, See Fig. 6 
Turn-On Delay Time ––– 13 19 VDD = -15V
Rise Time ––– 13 20 ID = -1.0A
Turn-Off Delay Time ––– 34 51 RG = 6.0Ω

ns

Fall Time ––– 32 48 RD = 15Ω, 
Input Capacitance ––– 710 ––– VGS = 0V
Output Capacitance ––– 380 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig. 5

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– ––– -2.5
Pulsed Source Current (Body Diode) ––– ––– -30

A

Body Diode Forward Voltage ––– -0.78 -1.0 V TJ = 25°C, IS = -1.7A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 44 66 ns TJ = 25°C, IF = -1.7A
Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs 

Parameter Max. Units Conditions

A

2.0 See Fig.14 Tc = 70°C
Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 10ms sine or 6ms Rect. pulse load condition &

A

with Vrrm applied

Parameter Max. Units Conditions

0.77 If = 6.0, Tj = 25°C

V

0.52 If = 3.0, Tj = 125°C

0.79 If = 6.0, Tj = 125°C .

mA

37 Tj = 125°C

A

A

A

Power Mosfet Characteristics

IRF7321D2PbF

100

VGS
TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V
BOTTOM - 3.0V

10

-3.0V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH
T = 25°C

1

0.1 1 10

-V , Drain-to-Source Voltage (V)
DS

100

J

100

VGS
TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V
BOTTOM - 3.0V

10

-3.0V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH
T = 150°C

1

0.1 1 10

-V , Drain-to-Source Voltage (V)
DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

---4.9A

4.9A

I =

D

1.5

T = 25°C

J

T = 150°C

10

J

1.0

(Normalized)

0.5

D

-I , Drain-to-Source Current (A)

1

3.0 3.5 4.0 4.5 5.0 5.5 6.0

-V , Gate-to-Source Voltage (V)

GS

V = -10V

DS

20µs PULSE WIDTH

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

V =

GS

°

-10V

10V

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

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