Datasheet IRF1310S Datasheet (International Rectifier)

HEXFET® Power MOSFET

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Advanced Process Technology
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.

The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.

PD - 9.1221

IRF1310S

V

= 100V

DSS

R
ID = 41A

DS(on)

SMD-220

= 0.04Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 41
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
I

DM

PD @TC = 25°C Power Dissipation 170
PD @TC = 25°C Power Dissipation (PCB Mount)** 3.8

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
T

J, TSTG

Pulsed Drain Current 160

Linear Derating Factor 1.1
Linear Derating Factor (PCB Mount)** 0.025
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 230 mJ
Avalanche Current 41 A
Repetitive Avalanche Energy 17 mJ

Junction and Storage Temperature Range -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)

W/°C

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJA

R

θJA

** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.

Junction-to-Case –––– –––– 0.90
Junction-to-Ambient (PCB Mount)** –––– –––– 40 °C/W
Junction-to-Ambient –––– –––– 62

W

°C

Revision 0

IRF1310S

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 25A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 12 ––– ––– S VDS = 50V, ID = 25A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– ––– 110 ID = 25A
Gate-to-Source Charge ––– ––– 18 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 42 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 50V
Rise Time ––– 77 ––– ID = 25A
Turn-Off Delay Time ––– 82 ––– RG = 9.1Ω

ns

Fall Time ––– 64 ––– RD = 2.0Ω, See Fig. 10

Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 2500 ––– VGS = 0V
Output Capacitance ––– 630 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V

= 25V, starting TJ = 25°C, L = 3.1mH

DD

RG = 25Ω, I

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

––– ––– 41

A

––– ––– 160

Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 25A, VGS = 0V
Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 25A
Reverse RecoveryCharge ––– 0.79 1.2 µC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

≤ 25A, di/dt ≤ 170A/µs, V

SD

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25A. (See Figure 12)

AS

IRF1310S

GS

, Gate-to-Source Voltage (V)

D

I , Drain-to-So urce Current (A)

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1000

VG S
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

10

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH
T = 25°C

1

0.1 1 1 0 100

V , D rain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics,

TC = 25oC

1000

1000

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

100

10

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH
T = 175°C

1

0.1 1 10 10 0

V , Drain-to-Source Voltage (V)

DS

C

Fig 2. Typical Output Characteristics,

TC = 175oC

3.0

I = 25A

D

100

10

1

4 5 6 7 8 9 10

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

2.5

T = 25°C

J

T = 175°C

J

V = 50V

DS

20µ s PULS E WID TH

V

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-6 0 -40 -20 0 20 4 0 60 8 0 100 120 140 160 180

T , Junction Temperature (°C)

J

V = 10V

GS

Vs. Temperature

IRF1310S

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400 0

300 0

200 0

C, Capacitance (pF)

100 0

0

1 10 10 0

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I = 25A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 30 60 90 120

Q , Total Gate Charge (nC)

G

V = 80V

DS

V = 50V

DS

V = 20V

DS

FOR TEST CIRCUIT
SEE FIGURE 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

100

10

SD

I , Reverse Drain Current (A)

1

0 0.5 1 1.5 2 2.5

Fig 7. Typical Source-Drain Diode

T = 175°C

J

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

SD

Forward Voltage

100

10

D

I , Drain Current (A)

T = 25°C

C

T = 175°C

J

Single Pulse

1

1 10 100 1000

V , D rain-to-Source Voltage (V)

DS

10µs

100µs

1ms

10ms

100ms

Fig 8. Maximum Safe Operating Area

50

t , Re ctangula r Pulse Duration (sec)

1

thJC

Thermal Re sponse (Z )

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40

30

20

D

I , Drain Current (Amps)

10

0

25 50 7 5 100 125 150 175

T , Case Temperature (°C)

C

IRF1310S

R

V

DS

V

GS

R

G

10 V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

D

D.U.T.

V

DD

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Case Temperature

1

D = 0 .50

0.2 0

0.1 0

0.1

P

0.0 5

0.0 2

0.01

0.01

0.0 0 0 0 1 0.0001 0 .001 0.01 0.1 1 10

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

S ING LE PUL S E
(T H E R M AL R E S P O NSE)

Notes:

1. Duty fa ctor D = t / t

2. Peak T = P x Z + T

DM

J

DM

t

1

t

2

2

1

th JC

C

IRF1310S

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10 V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

600

500

400

300

200

100

AS

V = 50V

E , Single Pulse Avalanche Energy (mJ)

DD

0

25 50 75 10 0 125 150 175

Starting T , Junction Temperature (°C)

J

I
TOP 10A
18A
BOTTOM 25A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

10 V

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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SMD-220 Outline

IRF1310S

IRF1310S

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Part Marking Information

Package Outline

SMD-220 Tape and Reel

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: [phone] IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: [phone] IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: [phone] IR

SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: [phone]

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: [phone]

Data and specifications subject to change without notice.