Industry Standard Single-Ended Current
Mode PWM Controller
The ISL8843 is an industry standard drop-in replacement for
the popular 28C43 and 18C43 PWM controllers suitable for
a wide range of power conversion applications including
boost, flyback, and isolated output configurations. Its fast
signal propagation and output switching characteristics
make this an ideal product for existing and new designs.
Features include 30V operation, low operating current, 90µA
start-up current, adjustable operating frequency to 2MHz,
and high peak current drive capability with 20ns rise and fall
times.
PART NUMBERRISING UVLOMAX. DUTY CYCLE
ISL88438.4V100%
Ordering Information
PART
NUMBER
ISL8843ABZ
(See Note)
ISL8843AUZ
(See Note)
ISL8843MBZ
(See Note)
ISL8843MUZ
(See Note)
Add -T to part number for Tape and Reel packaging.
PAR T
MARKING
8843 ABZ-40 to 1058 Ld SOIC
8843Z-40 to 1058 Ld MSOP
8843 MBZ-55 to 1258 Ld SOIC
843MZ-55 to 1258 Ld MSOP
TEMP.
RANGE (°C) PACKAGE
(Pb-free)
(Pb-free)
(Pb-free)
(Pb-free)
PKG.
DWG. #
M8.15
M8.118
M8.15
M8.118
FN9238.1
Features
• 1A MOSFET gate driver
•90µA start-up current, 125µA maximum
• 35ns propagation delay current sense to output
• Fast transient response with peak current mode control
• 30V operation
• Adjustable switching frequency to 2MHz
• 20ns rise and fall times with 1nF output load
• Trimmed timing capacitor discharge current for accurate
deadtime/maximum duty cycle control
• 1.5MHz bandwidth error amplifier
• Tight tolerance voltage reference over line, load, and
temperature
• ±3% current limit threshold
• Pb-free plus anneal available and ELV, WEEE, RoHS
Compliant
Applications
• Telecom and datacom power
• Wireless base station power
• File server power
• Industrial power systems
• PC power supplies
• Isolated buck and flyback regulators
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
• Boost regulators
Pinout
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
1. θ
JA
2. All voltages are with respect to GND.
Electrical SpecificationsISL8843A - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. V
are at T
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
UNDERVOLTAGE LOCKOUT
START Threshold8.08.49.0V
STOP Threshold 7.37.68.0V
Hysteresis -0.8- V
Startup Current, I
Operating Current, I
Operating Supply Current, I
REFERENCE VOLTAGE
Overall Accuracy Over line (V
Long Term Stability T
Current Limit, Sourcing-20--mA
Current Limit, Sinking5--mA
CURRENT SENSE
Input Bias CurrentV
CS Offset VoltageV
COMP to PWM Comparator Offset VoltageV
Input Signal, Maximum0.971.001.03V
Gain, A
CS
CS to OUT Delay-3555ns
ERROR AMPLIFIER
Open Loop Voltage Gain(Note 5)6090-dB
Unity Gain Bandwidth(Note 5)1.01.5-MHz
Reference VoltageV
= ∆V
DD
DD
D
/∆VCS 0 < VCS < 910mV, VFB = 0V2.53.03.5V/V
COMP
= 25°C
A
VDD < START Threshold-90125µA
(Note 4)-2.94.0mA
Includes 1nF GATE loading-4.755.5mA
temperature
= 125°C, 1000 hours (Note 5)-5-mV
A
= 1V-1.0-1.0µA
CS
= 0V (Note 5)95100105mV
CS
= 0V (Note 5)0.801.151.30V
CS
= V
FB
= 15V, RT = 10kΩ, CT = 3.3nF, TA = -40 to 105°C (Note 3) Typical values
DD
= 12V to 18V), load,
DD
COMP
4.9255.0005.050V
2.4752.5002.530V
(°C/W)
JA
4
FN9238.1
January 3, 2006
ISL8843
www.BDTIC.com/Intersil
Electrical SpecificationsISL8843A - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. V
are at T
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
FB Input Bias CurrentVFB = 0V-1.0-0.21.0µA
COMP Sink CurrentV
COMP Source CurrentV
COMP VOHV
COMP VOLV
PSRRFrequency = 120Hz, V
OSCILLATOR
Frequency AccuracyInitial, T
Frequency Variation with V
Temperature Stability(Note 5)--5%
Amplitude, Peak to PeakStatic Test-1.75-V
RTCT Discharge Voltage (Valley Voltage)Static Test-1.0-V
Discharge CurrentRTCT = 2.0V6.57.88.5mA
OUTPUT
Gate VOHV
Gate VOLOUT - GND, I
Peak Output CurrentC
Rise TimeC
Fall TimeC
GATE VOL UVLO Clamp VoltageVDD = 5V, I
PWM
Maximum Duty CycleCOMP = VREF93.595-%
Minimum Duty CycleCOMP = GND--0%
NOTES:
3. Specifications at -40°C and 105°C are guaranteed by 25°C test with margin limits.
4. This is the V
5. Guaranteed by design, not 100% tested in production.
DD
DD
current consumed when the device is active but not switching. Does not include gate drive current.
= 25°C (Continued)
A
COMP
COMP
FB
FB
18V (Note 5)
TA= 25°C, (F
DD
OUT
OUT
OUT
= 2.3V4.80-VREFV
= 2.7V0.4-1.0V
- OUT, I
= 1nF (Note 5)-1.0-A
= 1nF (Note 5)-2040ns
= 1nF (Note 5)-2040ns
= 15V, RT = 10kΩ, CT = 3.3nF, TA = -40 to 105°C (Note 3) Typical values
DD
= 1.5V, VFB = 2.7V1.0--mA
= 1.5V, VFB = 2.3V-0.4--mA
= 12V to
DD
= 25°C485153kHz
A
- F9V)/F
30V
OUT
OUT
LOAD
30V
= -200mA-1.02.0V
= 200mA-1.02.0V
= 1mA--1.2V
6080-dB
-0.21.0%
Electrical SpecificationsISL8843M - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. V
are at T
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
UNDERVOLTAGE LOCKOUT
START Threshold8.08.49.0V
STOP Threshold 7.37.68.0V
Hysteresis -0.8- V
Startup Current, I
Operating Current, I
Operating Supply Current, I
REFERENCE VOLTAGE
Overall Accuracy Over line (V
DD
DD
D
= 25°C
A
VDD < START Threshold-90125µA
(Note 7)-2.94.0mA
Includes 1nF GATE loading-4.755.5mA
temperature
5
= 15V, RT = 10kΩ, CT = 3.3nF, TA = -55 to 125°C (Note 6), Typical values
DD
= 12V to 18V), load,
DD
4.9005.0005.050V
January 3, 2006
FN9238.1
ISL8843
www.BDTIC.com/Intersil
Electrical SpecificationsISL8843M - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic. V
are at T
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
Long Term Stability TA = 125°C, 1000 hours (Note 8)-5-mV
Current Limit, Sourcing-20--mA
Current Limit, Sinking5--mA
CURRENT SENSE
Input Bias CurrentV
CS Offset VoltageV
COMP to PWM Comparator Offset VoltageV
Input Signal, Maximum0.971.001.03V
CS
= ∆V
Gain, A
CS to OUT Delay-3560ns
ERROR AMPLIFIER
Open Loop Voltage Gain(Note 8)6090-dB
Unity Gain Bandwidth(Note 8)1.01.5-MHz
Reference VoltageV
FB Input Bias CurrentV
COMP Sink CurrentV
COMP Source CurrentV
COMP VOHV
COMP VOLV
PSRRFrequency = 120Hz, V
OSCILLATOR
Frequency AccuracyInitial, T
Frequency Variation with V
Temperature Stability(Note 8)--5%
Amplitude, Peak to PeakStatic Test-1.75-V
RTCT Discharge Voltage (Valley Voltage)Static Test-1.0-V
Discharge CurrentRTCT = 2.0V6.28.08.5mA
OUTPUT
Gate VOHV
Gate VOLOUT - GND, I
Peak Output CurrentC
Rise TimeC
Fall TimeC
GATE VOL UVLO Clamp VoltageVDD = 5V, I
PWM
Maximum Duty CycleCOMP = VREF93.595-%
Minimum Duty CycleCOMP = GND--0%
NOTES:
6. Specifications at -55°C and 125°C are guaranteed by 25°C test with margin limits.
7. This is the V
8. Guaranteed by design, not 100% tested in production.
/∆VCS 0 < VCS < 910mV, VFB = 0V2.53.03.5V/V
COMP
DD
current consumed when the device is active but not switching. Does not include gate drive current.
DD
= 25°C (Continued)
A
CS
CS
CS
FB
FB
COMP
COMP
FB
FB
18V (Note 8)
TA = 25°C, (F
DD
OUT
OUT
OUT
= 1V-1.0-1.0µA
= 0V (Note 8)95100105mV
= 0V (Note 8)0.801.151.30V
= V
= 0V-1.0-0.21.0µA
= 2.3V4.80-VREFV
= 2.7V0.4-1.0V
- OUT, I
= 1nF (Note 8)-1.0-A
= 1nF (Note 8)-2040ns
= 1nF (Note 8)-2040ns
= 15V, RT = 10kΩ, CT = 3.3nF, TA = -55 to 125°C (Note 6), Typical values
DD
COMP
= 1.5V, VFB = 2.7V1.0--mA
= 1.5V, VFB = 2.3V-0.4--mA
= 12V to
DD
= 25°C485153kHz
A
- F9V)/F
30V
OUT
OUT
LOAD
30V
= -200mA-1.02.0V
= 200mA-1.02.0V
= 1mA--1.2V
2.4602.5002.535V
6080-dB
-0.21.0%
6
FN9238.1
January 3, 2006
Typical Performance Curves
www.BDTIC.com/Intersil
ISL8843
1.01
1
0.99
NORMALIZED FREQUENCY
0.98
-60 -40 -2002040 6080 100 120 140
TEMPERATURE (°C)
FIGURE 1. FREQUENCY vs TEMPERATUREFIGURE 2. REFERENCE VOLTAGE vs TEMPERATURE
1.001
1.000
0.998
0.997
NORMALIZED EA REFERENCE
0.996
-60 -40 -20020 40 60 80 100 120 140
TEMPERATURE (°C)
FIGURE 3. EA REFERENCE vs TEMPERATUREFIGURE 4. RTCT vs FREQUENCY
1.001
1.000
0.999
0.998
0.997
NORMALIZED VREF
0.996
0.995
-60 -40 -200 20 40 60 80 100
TEMPERATURE (°C)
3
1•10
100
10
FREQUENCY (kHz)
1
110100
RT (kΩ)
140120
CT =
100pF
220pF
330pF
470pF
1.0nF
2.2nF
3.3nF
4.7nF
6.8nF
Pin Descriptions
RTCT - This is the oscillator timing control pin. The
operational frequency and maximum duty cycle are set by
connecting a resistor, RT, between VREF and this pin and a
timing capacitor, CT, from this pin to GND. The oscillator
produces a sawtooth waveform with a programmable
frequency range up to 2.0MHz. The charge time, T
discharge time, T
, the switching frequency, f, and the
D
maximum duty cycle, Dmax, can be approximated from the
following equations:
TC0.533 RT CT••≈
0.008 RT 3.83–•
T
RT–CT
D
f1T
DT
CTD
C
+()⁄=
f•=
----------------------------------------------
ln••≈
0.008 RT 1.71–•
7
, the
C
(EQ. 1)
(EQ. 2)
(EQ. 3)
(EQ. 4)
The formulae have increased error at higher frequencies due
to propagation delays. Figure 4 may be used as a guideline
in selecting the capacitor and resistor values required for a
given frequency.
COMP - COMP is the output of the error amplifier and the
input of the PWM comparator. The control loop frequency
compensation network is connected between the COMP and
FB pins.
FB - The output voltage feedback is connected to the
inverting input of the error amplifier through this pin. The
non-inverting input of the error amplifier is internally tied to a
reference voltage.
CS - This is the current sense input to the PWM comparator.
The range of the input signal is nominally 0 to 1.0V and has
an internal offset of 100mV.
GND - GND is the power and small signal reference ground
for all functions.
FN9238.1
January 3, 2006
ISL8843
www.BDTIC.com/Intersil
OUT - This is the drive output to the power switching device.
It is a high current output capable of driving the gate of a
power MOSFET with peak currents of 1.0A. This GATE
output is actively held low when V
is below the UVLO
DD
threshold.
V
- VDD is the power connection for the device. The total
DD
supply current will depend on the load applied to OUT. Total
I
current is the sum of the operating current and the
DD
average output current. Knowing the operating frequency, f,
and the MOSFET gate charge, Qg, the average output
current can be calculated from:
I
OUT
Qg f×=
To optimize noise immunity, bypass V
ceramic capacitor as close to the V
DD
to GND with a
DD
and GND pins as
(EQ. 5)
possible.
VREF - The 5.00V reference voltage output. +1.0/-1.5%
tolerance over line, load and operating temperature. Bypass
to GND with a 0.1µF to 3.3µF capacitor to filter this output as
needed.
Functional Description
Features
The ISL8843 current mode PWM makes an ideal choice for
low-cost flyback and forward topology applications. With its
greatly improved performance over industry standard parts,
it is the obvious choice for new designs or existing designs
which require updating.
Oscillator
The ISL8843 has a sawtooth oscillator with a programmable
frequency range to 2MHz, which can be programmed with a
resistor from VREF and a capacitor to GND on the RTCT
pin. (Please refer to Figure 4for the resistor and capacitance
required for a given frequency.)
Soft-Start Operation
Soft-start must be implemented externally. One method,
illustrated below, clamps the voltage on COMP.
The COMP pin is clamped to the voltage on capacitor C1
plus a base-emitter junction by transistor Q1. C1 is charged
from VREF through resistor R1 and the base current of Q1.
At power-up C1 is fully discharged, COMP is at ~0.7V, and
the duty cycle is zero. As C1 charges, the voltage on COMP
increases, and the duty cycle increases in proportion to the
voltage on C1. When COMP reaches the steady state
operating point, the control loop takes over and soft start is
complete. C1 continues to charge up to VREF and no longer
affects COMP. During power down, diode D1 quickly
discharges C1 so that the soft start circuit is properly
initialized prior to the next power on sequence.
Gate Drive
The ISL8843 is capable of sourcing and sinking 1A peak
current. To limit the peak current through the IC, an optional
external resistor may be placed between the totem-pole
output of the IC (OUT pin) and the gate of the MOSFET. This
small series resistor also damps any oscillations caused by
the resonant tank of the parasitic inductances in the traces of
the board and the FET’s input capacitance.
Slope Compensation
For applications where the maximum duty cycle is less than
50%, slope compensation may be used to improve noise
immunity, particularly at lighter loads. The amount of slope
compensation required for noise immunity is determined
empirically, but is generally about 10% of the full scale
current feedback signal. For applications where the duty
cycle is greater than 50%, slope compensation is required to
prevent instability.
Slope compensation may be accomplished by summing an
external ramp with the current feedback signal or by
subtracting the external ramp from the voltage feedback
error signal. Adding the external ramp to the current
feedback signal is the more popular method.
From the small signal current-mode model [1] it can be
shown that the naturally-sampled modulator gain, Fm,
without slope compensation, is
Fm
1
------------------- -=
SnTsw
(EQ. 6)
where Sn is the slope of the sawtooth signal and Tsw is the
duration of the half-cycle. When an external ramp is added,
the modulator gain becomes
Fm
1
---------------------------------------
Sn Se+()Tsw
where Se is slope of the external ramp and
m
c
Se
1
-------+=
Sn
D1R1
C1
VREF
ISL8843
COMP
Q1
GND
The criteria for determining the correct amount of external
FIGURE 5. SOFT-START
ramp can be determined by appropriately setting the
damping factor of the double-pole located at the switching
8
1
----------------------------==
m
SnTsw
c
(EQ. 7)
(EQ. 8)
FN9238.1
January 3, 2006
ISL8843
www.BDTIC.com/Intersil
frequency. The double-pole will be critically damped if the
Q-factor is set to 1, over-damped for Q < 1, and underdamped for Q > 1. An under-damped condition may result in
current loop instability.
where D is the percent of on time during a switching cycle.
Setting Q = 1 and solving for Se yields
S
eSn
1
-- - 0.5+
=
π
1
-------------
1D–
1–
(EQ. 10)
Since Sn and Se are the on time slopes of the current ramp
and the external ramp, respectively, they can be multiplied
by Ton to obtain the voltage change that occurs during Ton.
V
eVn
1
=
-- -
π
1
-------------
0.5+
1D–
1–
(EQ. 11)
where Vn is the change in the current feedback signal (∆I)
during the on time and Ve is the voltage that must be added
by the external ramp.
For a flyback converter, Vn can be solved for in terms of
input voltage, current transducer components, and primary
inductance, yielding
Substituting Equations 12 and 13 into Equation 14 and
solving for R
Adding slope compensation is accomplished in the ISL8843
using an external buffer transistor and the RTCT signal. A
typical application sums the buffered RTCT signal with the
current sense feedback and applies the result to the CS pin
as shown in Figure 6.
minimum input voltage, and D is the maximum duty cycle.
The current sense signal at the end of the ON time for CCM
operation is:
NSRCS⋅
------------------------
=V(EQ. 13)
V
CS
where V
L
is the secondary winding inductance, and IO is the output
s
N
P
is the voltage across the current sense resistor,
CS
1D–()VOT⋅⋅
+
I
----------------------------------------------
O
2L
sw
s
current at current limit. Equation 13 assumes the voltage
drop across the output rectifier is negligible.
Since the peak current limit threshold is 1.00V, the total
current feedback signal plus the external ramp voltage must
sum to this value when the output load is at the current limit
threshold.
V
+1=
eVCS
(EQ. 14)
FIGURE 6. SLOPE COMPENSATION
Assuming the designer has selected values for the RC filter
(R6 and C4) placed on the CS pin, the value of R9 required
to add the appropriate external ramp can be found by
superposition.
2.05D R6⋅
=V
V
---------------------------- -
e
R6 R9+
(EQ. 16)
The factor of 2.05 in Equation 16 arises from the peak
amplitude of the sawtooth waveform on RTCT minus a baseemitter junction drop. That voltage multiplied by the
maximum duty cycle is the voltage source for the slope
compensation. Rearranging to solve for R9 yields:
2.05D V
–()R6⋅
R9
-----------------------------------------------=Ω
V
e
The value of R
e
determined in Equation 15 must be
CS
(EQ. 17)
rescaled so that the current sense signal presented at the
CS pin is that predicted by Equation 13. The divider created
by R6 and R9 makes this necessary.
R6 R9+
CS
----------------------
R9
⋅=
R
CS
(EQ. 18)
R′
9
FN9238.1
January 3, 2006
Example:
www.BDTIC.com/Intersil
VIN = 12V
VO = 48V
Ls = 800µH
Ns/Np = 10
Lp = 8.0µH
IO = 200mA
Switching Frequency, Fsw = 200kHz
Duty Cycle, D = 28.6%
R6 = 499Ω
Solve for the current sense resistor, RCS, using Equation 15.
RCS = 295mΩ
Determine the amount of voltage, Ve, that must be added to
the current feedback signal using Equation 12.
Ve = 92.4mV
ISL8843
Using Equation 17, solve for the summing resistor, R9, from
CT to CS.
R9 = 2.67kΩ
Determine the new value of R
R’CS = 350mΩ
Additional slope compensation may be considered for
design margin. The above discussion determines the
minimum external ramp that is required. The buffer transistor
used to create the external ramp from RTCT should have a
sufficiently high gain (>200) so as to minimize the required
base current. Whatever base current is required reduces the
charging current into RTCT and will reduce the oscillator
frequency.
, R’CS, using Equation 18.
CS
Fault Conditions
A Fault condition occurs if VREF falls below 4.65V. When a
Fault is detected OUT is disabled. When VREF exceeds
4.80V, the Fault condition clears, and OUT is enabled.
Ground Plane Requirements
Careful layout is essential for satisfactory operation of the
device. A good ground plane must be employed. A unique
section of the ground plane must be designated for high di/dt
currents associated with the output stage. V
bypassed directly to GND with good high frequency
capacitors.
should be
DD
References
[1] Ridley, R., “A New Continuous-Time Model for Current
Mode Control”, IEEE Transactions on Power
Electronics, Vol. 6, No. 2, April 1991.
10
FN9238.1
January 3, 2006
Small Outline Plastic Packages (SOIC)
www.BDTIC.com/Intersil
ISL8843
N
INDEX
AREA
123
-A-
E
-B-
SEATING PLANE
D
A
-C-
0.25(0.010)BMM
H
L
h x 45°
α
e
B
0.25(0.010)C AMBS
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
1. These package dimensions are within allowable dimensions of
JEDEC MO-187BA.
2. Dimensioning and tolerancing per ANSI Y14.5M-1994.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs and are measured at Datum Plane. Mold flash, protrusion
and gate burrs shall not exceed 0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions
and are measured at Datum Plane.Interlead flash and
protrusions shall not exceed 0.15mm (0.006 inch) per side.
5. Formed leads shall be planar with respect to one another within
0.10mm (0.004) at seating Plane.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
- H -
-A -
.
10. Datumsandto be determined at Datum plane
11. Controlling dimension: MILLIMETER. Converted inch dimensions are for reference only.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
12
FN9238.1
January 3, 2006
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