Intersil ISL6208BCRZ, ISL6208BIRZ, ISL6208CBZ, ISL6208CRZ, ISL6208IBZ Schematic [ru]

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High Voltage Synchronous Rectified Buck MOSFET Drivers
ISL6208, ISL6208B
The ISL6208 and ISL6208B are high frequency, dual MOSFET drivers, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. They are especially suited for mobile computing applications that require high efficiency and excellent thermal performance. These drivers, combined with an Intersil multiphase Buck PWM controller, form a complete single-stage core-voltage regulator solution for advanced mobile microprocessors.
ISL6208 and ISL6208B have the same function but different packages. The descriptions in this datasheet are based on ISL6208 and also apply to ISL6208B.
The ISL6208 features 4A typical sinking current for the lower gate driver. This current is capable of holding the lower MOSFET gate off during the rising edge of the Phase node. This prevents shoot-through power loss caused by the high dv/dt of phase voltages. The operating voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies.
The ISL6208 also features a three-state PWM input that, working together with Intersil’s multiphase PWM controllers, will prevent negative voltage output during CPU shutdown. This feature eliminates a protective Schottky diode usually seen in a microprocessor power systems.
MOSFET gates can be efficiently switched up to 2MHz using the ISL6208. Each driver is capable of driving a 3000pF load with propagation delays of 8ns and transition times under 10ns. Bootstrapping is implemented with an internal Schottky diode. This reduces system cost and complexity, while allowing the use of higher performance MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
A diode emulation feature is integrated in the ISL6208 to enhance converter efficiency at light load conditions. This feature also allows for monotonic start-up into pre-biased outputs. When diode emulation is enabled, the driver will allow discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET gate.
Features
• Dual MOSFET drives for synchronous rectified bridge
• Adaptive shoot-through protection
•0.5 On-resistance and 4A sink current capability
• Supports high switching frequency up to 2MHz
- Fast output rise and fall time
- Low propagation delay
• Three-state PWM input for power stage shutdown
• Internal bootstrap schottky diode
• Low bias supply current (5V, 80µA)
• Diode emulation for enhanced light load efficiency and pre­biased start-up applications
• VCC POR (power-on-reset) feature integrated
• Low three-state shutdown holdoff time (typical 160ns)
• Pin-to-pin compatible with ISL6207
• QFN and DFN package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad flat no leads - package outline DFN - Dual flat no leads - package outline
- Near chip scale package footprint, which improves PCB
efficiency and has a thinner profile
• Pb-free (RoHS compliant)
Applications
• Core voltage supplies for Intel® and AMD® mobile microprocessors
• High frequency low profile DC/DC converters
• High current low output voltage DC/DC converters
• High input voltage DC/DC converters
Related Literature
•Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)”
•Technical Brief TB389 Surface Mount Guidelines for MLFP Packages”
•Technical Brief TB447 Boot-to-Phase Stress on Half-Bridge MOSFET Driver ICs”
“PCB Land Pattern Design and
“Guidelines for Preventing
July 14, 2014 FN9115.7
1
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2004-2008, 2011, 2012, 2014. All Rights Reserved
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Ordering Information
UGATE
BOOT
PWM
GND
1 2 3 4
8 7 6 5
PHASE FCCM VCC LGATE
7
UGATE
PHASE
8
43
1
2
6
GND
LGATE
FCCM
VCC
BOOT
PWM
5
6
1
6
VCC
LGATE
PWM
GND
5
6
6
PHASE
FCCM
7
8
UGATE
BOOT
2 3
4
VCC
PWM
10k
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
BOOT
UGATE
PHASE
LGATE
GND
VCC
FCCM
THERMAL PAD (FOR QFN AND DFN PACKAGE ONLY)
FIGURE 1. BLOCK DIAGRAM
ISL6208, ISL6208B
PART NUMBER
(Notes 3
, 4)
ISL6208CBZ (Note 1
ISL6208CRZ (Note 1
) ISL62 08CBZ -10 to +100 8 Ld SOIC M8.15
) 208Z -10 to +100 8 Ld 3x3 QFN L8.3x3
ISL6208BCRZ-T (Note 2
ISL6208IBZ (Note 1
ISL6208IRZ (Note 1
) ISL62 08IBZ -40 to +100 8 Ld SOIC M8.15
) 8IRZ -40 to +100 8 Ld 3x3 QFN L8.3x3
ISL6208BIRZ-T (Note 2
) 8BC -10 to +100 8 Ld 2x2 DFN L8.2x2D
) 8BI -40 to +100 8 Ld 2x2 DFN L8.2x2D
PART
MARKING
TEMP. RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
NOTES:
1. Add “-T*” suffix for tape and reel. Please refer to TB347
2. Please refer to TB347
for details on reel specifications.
for details on reel specifications.
3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
4. For Moisture Sensitivity Level (MSL), please see device information page for ISL6208
TB363
.
, ISL6208B. For more information on MSL please see techbrief
Pin Configurations
ISL6208CBZ, ISL6208IBZ
(8 LD SOIC)
TOP VIEW
ISL6208CRZ, ISL6208IRZ
(8 LD 3x3 QFN)
TOP VIEW
ISL6208BCRZ, ISL6208BIRZ
(8 LD 2x2 DFN)
TOP VIEW
Block Diagram
ti
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FN9115.7
July 14, 2014
ISL6208, ISL6208B
ti
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V BOOT Voltage (V BOOT To PHASE Voltage (V
, V
FCCM
BOOT-GND
) . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
PWM
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 33V
BOOT-PHASE
). . . . . . . . . . . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage (Note 5
) . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 30V
GND - 10V (<20ns Pulse Width, 10µJ)
UGATE Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . V
V
- 5V (<20ns Pulse Width, 10µJ) to V
LGATE Voltage . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V (DC) to VCC + 0.3V
PHASE
- 0.3V (DC) to V
PHASE
BOOT BOOT
GND - 2.5V (<20ns Pulse Width, 5µJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty.
NOTES:
5. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
6.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
7.
JA
Brief TB379
8. For
9. For
.
, the “case temp” location is the center of the exposed metal pad on the package underside.
JC
, the “case temp” location is taken at the package top center.
JC
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Boldface limits apply across the operating
temperature range.
PARAMETER SYMBOL TEST CONDITIONS
Thermal Resistance (Typical)
8 Ld SOIC Package (Notes 6 8 Ld 3x3 QFN Package (Notes 7 8 Ld 2x2 DFN Package (Notes 7
, 9) . . . . . . . . . 110 67
, 8) . . . . . . 80 15
, 8) . . . . . . 89 24
(°C/W) JC (°C/W)
JA
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-10°C to +100°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
MIN
(Note 11
)TYP
MAX
(Note 11)UNITS
V
SUPPLY CURRENT
CC
Bias Supply Current I
VCC
PWM pin floating, V
= 5V - 80 - µA
FCCM
POR
V
Rising -3.403.90 V
CC
V
Falling 2.40 2.90 - V
CC
Hysteresis - 500 - mV
BOOTSTRAP DIODE
Forward Voltage V
V
F
= 5V, forward bias current = 2mA 0.50 0.55 0.65 V
VCC
PWM INPUT
Input Current I
PWM
PWM Three-State Rising Threshold V
PWM Three-State Falling Threshold V
Three-State Shutdown Hold-off Time t
TSSHD
V
= 5V - 250 - µA
PWM
V
= 0V - -250 - µA
PWM
= 5V 0.70 1.00 1.30 V
VCC
= 5V 3.5 3.8 4.1 V
VCC
V
= 5V, temperature = +25°C 100 175 250 ns
VCC
FCCM INPUT
FCCM LOW Threshold 0.50 --V
FCCM HIGH Threshold --2.0 V
SWITCHING TIME
UGATE Rise Time (Note 10
LGATE Rise Time (Note 10
)t
)t
UGATE Fall Time (Note 10) t
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3
RU
RL
FU
V
= 5V, 3nF load - 8.0 - ns
VCC
V
= 5V, 3nF load - 8.0 - ns
VCC
V
= 5V, 3nF load - 8.0 - ns
VCC
FN9115.7
July 14, 2014
ISL6208, ISL6208B
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Boldface limits apply across the operating
temperature range.
PARAMETER SYMBOL TEST CONDITIONS
MIN
(Note 11
)TYP
MAX
(Note 11)UNITS
LGATE Fall Time (Note 10) t
UGATE Turn-Off Propagation Delay t
LGATE Turn-Off Propagation Delay t
UGATE Turn-On Propagation Delay t
LGATE Turn-On Propagation Delay t
UG/LG Three-State Propagation Delay t
Minimum LG ON-TIME in DCM (Note 10
)t
FL
PDLU
PDLL
PDHU
PDHL
PTS
LGMIN
V
= 5V, 3nF load - 4.0 - ns
VCC
V
= 5V, outputs unloaded - 18 - ns
VCC
V
= 5V, outputs unloaded - 25 - ns
VCC
V
= 5V, outputs unloaded 10 20 30 ns
VCC
V
= 5V, outputs unloaded 10 20 30 ns
VCC
V
= 5V, outputs unloaded - 35 - ns
VCC
- 400 - ns
OUTPUT
Upper Drive Source Resistance R
Upper Driver Source Current (Note 10
)I
Upper Drive Sink Resistance R
Upper Driver Sink Current (Note 10
)I
Lower Drive Source Resistance R
Lower Driver Source Current (Note 10
)I
Lower Drive Sink Resistance R
Lower Driver Sink Current (Note 10
)I
500mA source current - 1 2.5
U
V
U
U
U
L
L
L
L
UGATE-PHASE
500mA sink current - 1 2.5
V
UGATE-PHASE
500mA source current - 1 2.5
V
LGATE
500mA sink current - 0.5 1.0
V
LGATE
= 2.5V - 2.00 - A
= 2.5V - 2.00 - A
= 2.5V - 2.00 - A
= 2.5V - 4.00 - A
NOTES:
10. Limits established by characterization and are not production tested.
11. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested.
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FN9115.7
July 14, 2014
ISL6208, ISL6208B
+5V
BOOT
UGATE
PHASE
LGATE
PWM
FCCM
VCC
DRIVE
V
BAT
+5V
BOOT
UGATE
PHASE
LGATE
PWM
V
BAT
+V
CORE
PGOOD
VID
FS
GND
ISEN2
ISEN1
PWM2
PWM1
VSEN
MAIN
FB
VCC
+5V
COMP
ISL6208
CONTROL
VCC
DRIVE
ISL6208
+5V
DACOUT
FCCM
FCCM
THERMAL PAD
THERMAL PAD
Typical Application with 2-Phase Converter
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July 14, 2014
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