intersil ISL6142, ISL6152 DATA SHEET

®
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Data Sheet July 2004
Negative Voltage Hot Plug Controller
The ISL6142/52 are 14 pin, negative voltage hot plug controllers that allow a board to be safely inserted and removed from a live backplane. Inrush current is limited to a programmable value by controlling the gate voltage of an external N-channel pass transistor. The pass transistor is turned off if the input voltage is less than the Under-Voltage threshold, or greater than the Over­Voltage threshold. The PWRGD
/PWRGD outputs can be used to directly enable a power module. When the Gate and DRAIN voltages are both considered good the output is latched in the active state.
The IntelliTrip
TM
electronic circuit breaker and programmable current limit features protect the system against short circuits. When the Over-Current threshold is exceeded, the output current is limited for a time-out period before the circuit breaker trips and shuts down the FET. The time-out period is programmab le with an external capacitor connected to the CT pin. If the fault disappears before the programmed time-out, normal operation resumes. In addition, the IntelliTrip
TM
electronic circuit breaker has a fast Hard Fault shutdown, with a threshold set at 4 times the Over-Current trip point. When activated, the GATE is immediately turned off and then slowly turned back on for a single retry.
The IS+, IS-, and IS
pins combine to provide a load current
OUT
monitor feature that presents a scaled version of the load current at the IS by placing a resistor (R9) from IS
pin. Current to voltage conversion is accomplished
OUT
to the negative input (-48V).
OUT
Related Literature
• ISL6142/52EVAL1 Board Set, Document AN1000
• ISL6140/50EVAL1 Board Set, Document AN9967
• ISL6140/41EVAL1 Board Set, Document AN1020
• ISL6141/51 Hot Plug Controller, Document FN9079
• ISL6141/51 Hot Plug Controller, Document FN9039
• ISL6116 Hot Plug Controller, Document FN4778
NOTE: See www.intersil.com/hotplug for more information.
Pinout
ISL6142 OR ISL6152 (14 LEAD SOIC)
PWRGD
/PWRGD
FAULT
DIS
OV
UV
V
1
Top View
2
3
ISL6142/52
4
5
IS-
6
7
EE
14
V
DD
13
CT
IS
12
OUT
11
DRAIN
10
GATE
9
IS+
8
SENSE
FN9086.1
Typical Application
Logic
Supply
R10
R1 = 0.02Ω (1%) R2 = 10 R3 = 18K R4 = 549K R5 = 6.49KΩ
GND GND
V
DD
ISL6142/ISL6152
IS+
SENSE
R7
R8
R1
(1%)
(1%)
(10%)
-48V IN
(5%)
(5%)
R4
R5
R6
R9
(1%)
(1%)
FAULT
DIS IS
OUT
UV
OV
V
CT
IS-
EE
C3
R6 = 10KΩ (1%) R7 = R8 = 400 R9 = 4.99K R10 = 5.1K C1 = 150nF (25V)
PWRGD PWRGD
GATE DRAIN
R3
C1
C2
R2
Q1
C2 = 3.3nF (100V) C3 = 1500pF (25V) Q1 = IRF530 CL = 100uF (100V) RL = Equivalent load
LOAD
CL RL
-48V OUT
Features
• Operates from -20V to -80V (-100V Absolute Max Rating)
• Programmable Inrush Current
• Programmable Time-Out
• Programmable Current Limit
• Programmable Ov er-Voltage Protection
• Programmable Under-Voltage Protection
- 135 mV of hysteresis ~4.7V of hysteresis at the power supply
•V
Under-Voltage Lock-Out (UVLO) ~ 16.5V
DD
TM
• IntelliTrip severe and moderate faults
- Fast shutdown for short circuit faults with a single retry (fault
current > 4X current limit value).
•FAULT pin reports the occurrence of an Over-Current Time-Out
• Disable input control s GATE shutdo wn a nd resets Ov e r-Current fault latch
• Load Current Monitor Function
-IS
- A resistor from IS
conversion
• Power Good Control Output
- Output latched “good” when DRAIN and GATE voltage
thresholds are met.
-(PWRGD
- PWRGD active high: ISL6152 (H version)
• Pb-free available
Electronic Circuit Breaker distinguishes between
provides a scaled version of the load current
OUT
to -VIN provides current to voltage
OUT
active low: ISL6142 (L version)
Applications
• Vo IP (Voice over Internet Protocol) Servers
• Telecom systems at -48V
• Negative Power Supply Control
• +24V Wireless Base Station Power
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Intersil and Design is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002, 2004, All Rights Reserved
Intellitrip™ is a trademark of Intersil Americas Inc.
ISL6142, ISL6152
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Ordering Information
PKG.
PART NUMBER TEMP. RANGE (oC) PACKAGE
ISL6142CB 0 to 70 14 Lead SOIC M14.15 ISL6142CBZA
(See Note) ISL6152CB 0 to 70 14 Lead SOIC M14.15 ISL6152CBZA
(See Note) ISL6142IB -40 to 85 14 Lead SOIC M14.15 ISL6142IBZA
(See Note) ISL6152IB -40 to 85 14 Lead SOIC M14.15 ISL6152IBZA
(See Note) *Add “-T” suffix to part number for tape and reel packaging.
NOTE: Intersil Pb-free products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which is compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J Std-020B.
0 to 70 14 Lead SOIC
(Pb-free)
0 to 70 14 Lead SOIC
(Pb-free)
-40 to 85 14 Lead SOIC (Pb-free)
-40 to 85 14 Lead SOIC (Pb-free)
DWG. #
M14.15
M14.15
M14.15
M14.15
2
ISL6142, ISL6152 Block Diagram
www.BDTIC.com/Intersil
ISL6142, ISL6152
LOGIC SUPPLY
LOGIC INPUT
R10
C3
R4
R5
R6
GND
FAULT
UV
OV
DIS
CT
GND
V
DD
-
1.265V
+
+
V
EE
-
V
1.255V
+
­V
1.255V
+
­V
EE
-
+
EE
+
-
EE
UVLO
REGULATOR,
REFERENCES
UV
13V
OV
LOGIC,
TIMING,
GATE DRIVE
-
210mV
+
+
­V
EE
-
50mV
+
+
­V
EE
V
EE
13V
V
EE+5V
-
8.5V
+
+
-
V
V
EE
EE
HARD FAULT
GATE
CURRENT
LIMIT
REGULATOR
FAULT
DISABLE
TIMER
GATE
STOP
11. 1V
+
­V
1.3V
+
­V
8.0V
+
­V
-
+
PWRGD
EE
-
+
EE
-
+
EE
LATCH, LOGIC, OUTPUT DRIVE
(ISL6142)
PWRGD
(ISL6152)
CURRENT
TO ADC
-48V IN
R9
IS
OUT
SENSE
V
IS-
EE
R7
R8
IS+
SENSE
C1
R1
GATE DRAIN
C2
R3
R2
Q1
FIGURE 1. BLOCK DIAGRAM
3
LOAD
CL
RL
-48V OUT
ISL6142, ISL6152
www.BDTIC.com/Intersil
Pin Descriptions
PWRGD (ISL6142; L Version) Pin 1 - This digital output is an open-drain pull-down de vice and can be used to directly enable an external module. During start-up the DRAIN and GATE voltages are monitored with two separate comparators. The first comparator looks at the DRAIN pin v oltage compared to the internal V voltage drop across the exte rnal FET and sense resistor. When the DRAIN to V first of two conditions required for the po we r to be considered good are met. In addition, the GATE voltage monitored b y th e second comparator must be within approxima tely 2.5V of its normal operating voltage (13.6V). When both criteria are met the PWRGD active state, enabling the external module. When this occurs the two comparators discussed above no longer control the output. However a third comparator continues to monitor the DRAIN voltage, and will driv e the PWR GD the DRAIN voltage raises more than 8V abo ve V addition, any of the signals that shut off the GATE (Over­V oltag e , Unde r-Voltage, Under-Voltage Lock-Out, Over­Current time-out, pulling the DIS pin high, or powering down) will reset the latch and drive the PWRGD disable the module. In this case, the output pull-down device shuts off, and the pin becomes high impedance. Typically an external pull-up of some kind is u sed to pull the pin high (man y brick regulators have a pul l-up functi on built in).
PWRGD (ISL6152; H Version) Pin 1 - This digital output is used to provide an active high signal to enable an external module. The Power Good comparators are the same as described above, but the active state of the output is reversed (reference figure 37).
When power is considered good (both DRAIN and GATE are normal) the output is latched in the active high state, the DMOS device (Q3) turns on and sinks current to V a 6.2K resistor. The base of Q2 is clamped to V off. If the external pull-up current is high enough (>1mA, for example), the voltage drop across th e resistor will be large enough to produce a logic high output and enable the e xternal module (in this example, 1mA x 6.2KΩ = 6.2V).
Note that for all H versions, although this is a digital pin functionally , the logic high lev el is determined by the external pull-up device, and the power supply to which it is connected; the IC will not clamp it below the V Therefore, if the external device does not have its own clamp, or if it would be damaged by a high voltage, an external clamp might be necessary.
If the power good latch is reset (GA TE turns off), the internal DMOS device (Q3) is turned off, and Q2 (NPN) turns on to clamp the output one diode drop above the DRAIN voltage to produce a logic low, indicating power is no longer good.
reference (1.3V); this measures the
PG
voltage drop is less than 1.3V, the
EE
output will transition low and be latched in the
output inactive if
. In
EE
output high to
through
EE
to turn it
EE
voltage.
DD
FAULT
Pin 2- This digital output is an open-drain, pull-down
device, referenced to V the Over-Current latch is set. It goes to a high impedance state when the fault latch is reset by toggling the UV or DIS pins. An external pull-up resistor to a logic supply (5V or less) is required; the fault outputs of multiple IC’s can be wire-OR’d together. If the pin is not used it should be left open.
DIS Pin 3 - This digital input disables the FET when driven to a logic high state. It has a weak internal pull-up device to an internal 5V rail (10µA), so an open pin will also act as a logic high. The input has a nominal trip point of 1.6 V while rising, and a hysteresis of 1.0V. The threshold voltage is referenced to V
, and is compatible with CMOS logic levels. A logic
EE
low will allow the GATE to turn on (assuming the 4 other conditions described in the GA TE section are also true). The DIS pin can also be used to reset the Over-Current latch when toggled high to low. If not used the pin should be tied to the negative supply rail (-V
OV (Over-Voltage) Pin 4 - This analog input compares the voltage on the pin to an internal voltage reference of 1.255 V (nominal). When the input goes above the reference the GATE pin is immediately pulled low to shut off the external FET . The built in 25mV hysteresis will k eep the GATE off until the OV pin drops below 1.230V (the nominal high to low threshold). A typical application will use an external resistor divider from V resistor divider can be used to set both OV and UV trip points to reduce component count.
UV (Under-Voltage) Pin 5 - This analog input compares the voltage on the pin to an internal comparator with a built in hysteresis of 135mv. When the UV input goes be low the nominal reference voltage of 1.120V, the GATE pin is immediately pulled low to shut off the external FET. The GATE will remain off until the UV pin rises above a 1.255V low to high threshold. A typical application will use an external resistor divider from V as desired. A three-resistor divider can be used to set both OV and UV trip points to reduce component count.
The UV pin is also used to reset the Over-Current latch. The pin must be cycled below 1.120V (nominal) and then above
1.255V (nominal) to clear the latch and initiate a normal start-up sequence.
IS- Pin 6 - This analog pin is the negative input of the current sense circuit. A sensing resistor (R7) is connected between this pin and the V defines the I sensing is not used in the application, the IS- pin should be tied directly to the IS+ pin and the node should be left floating.
to -VIN to set the OV trip level. A three-
DD
EE
SENSE
. It is pulled active low whenever
EE
).
IN
to -VIN to set the UV level
DD
side of resistor R1. The ratio of R1/R7
to IS
current scaling factor . If current
OUT
4
ISL6142, ISL6152
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VEE Pin 7 - This is the most Negative Supply Voltage, such as in a -48V system. Most of the other signals are referenced relative to this pin, e ven though it may be far aw a y from wh at is considered a GND reference.
SENSE Pin 8 - This analog input monitors the voltage drop across the external sense resistor to determine if the current flowing through it exceeds the programmed Over-Current trip point (50mV / Rsense). If the Over-Current threshold is exceeded, the circuit will regulate the current to maintain a nominal voltage drop of 50mV across the R1 sense resistor, also referred to as Rsense. If current is limited for more than the programmed time-out period the IntelliTrip circuit breaker will trip and turn off the FET.
A second comparator is employed to detect and respond quickly to hard faults. The threshold of this comparator is set approximately four times higher (210mV) than the Over­Current trip point. When the hard fault comparator threshold is exceeded the GATE is immediately (10µs typical) shut off (V
= VEE), the timer is reset, and a single retry (soft
GATE
start) is initiated. IS+ Pin 9 - This analog pin is the positive input of the current
sense circuit. A sensing resistor (R8) is connected between this pin and the output side of R1, which is also connected to the SENSE pin. It should match the IS- resistor (R7) as closely as possible (1%) to minimize output current error (IS
). If current sensing is not used in the application, the
OUT
IS+ pin should be tied directly to the IS- pin and the node should be left floating.
GATE Pin 10 - This analog output drives the gate of the external FET used as a pass transistor. The GATE pin is high (FET is on) when the following conditions are met:
•V
UVLO is above its trip point (~16.5V)
DD
• V oltage on the UV pin is above its trip point (1.255V)
• V oltage on the OV pin is below its trip point (1.255V)
• No Over-Current conditions are present.
• The Disable pin is low. If any of the 5 conditions are violated, the GATE pin will be
pulled low to shut off or regulate current through the FET. The GATE is latched off only when an Over-Current event exceeds the programmed time-out period.
TM
electronic
1.3v and 8.0V. At initial start-up the DRAIN to V differential must be less than 1.3V, and the GATE voltage must be within 2.5V of its normal operating voltage (13.6V) for power to be considered good. When both conditions are met, the PWRGD state. At this point only the 8V DRAIN comparator can control the PWRGD if the DRAIN voltage exceeds V
IS
Pin 12 - This analog pin is the output of the current
OUT
sense circuit. The current flowing out of this pin (IS proportional to the current flowing through the R1 sense resistor (I defined by the resistor ratio of R1/R7. Current to voltage conversion is accomplished by placing a resistor from this pin to -V the internal 13V regulator and should not exceed 600µA. The output voltage will clamp at approximately 8V. If current sensing is not used in the application the pin should be left open.
CT Pin 13 - This analog I/O pin is used to program the Over­Current Time-Out period with a capacitor connected to the negative supply rail (-V normal operation, the pin is pulled down to V current limiting, the capacitor is charged with a 20µA (nominal) current source. When the CT pin charges to 8.5V, it times out and the GATE is latched off. If the short circuit goes away prior to the time-out, the GATE will remain on. If no capacitor is connected, the time-out will be much quicker, with only the package pin capacitance (~ 5 to 10 pF) to charge. If no external capacitor is connected to the CT pin the time-out will occur in a few µsec. To set the desired time­out period use:
dt = (C * dV) / I = (C * 8.5) / 20 µA = 0.425*10
NOTE: The printed circuit board’s parasitic capacitance (CT pin to the negative input, -V calculating the value of C3 needed for the desired time-out.
VDD Pin 14 - This is the most positive Power Supply pin. It can range from the Under-Volta ge lockout threshold (16.5V) to +80V (Relative to V without damage to the IC.
SENSE
IN
/PWRGD output is latched into the active
/PWRGD output, and will drive it inactive
by more than 8.0V.
EE
). The scaling factor, IS
. The current flowing out of the pin is supplied by
which is equal to VEE). During
IN
) should be taken into consideration when
IN
). The pin can tolerate up to 100V
EE
OUT/ISENSE
EE
. During
EE
6
* C
voltage
) is
OUT
is
The GATE is driven high by a weak (-50µA nominal) pull-up current source, in order to slowly turn on the FET. It is driven low by a 70mA (nominal) pull-down device for three of the above shut-off conditions. A larger (350mA nominal) pull­down current shuts off the FET very quickly in the event of a hard fault where the sense pin voltage exceeds approximately 210mV.
DRAIN Pin 11 - This analog input monitors the voltage of the FET drain for the P ower Good function. The DRAIN input is tied to two comparators with internal reference voltages of
5
ISL6142, ISL6152
www.BDTIC.com/Intersil
.
Absolute Maximum Ratings Thermal Information
Supply Voltage (VDD to VEE). . . . . . . . . . . . . . . . . . . .-0.3V to 100V
DRAIN, PWRGD
UV, OV Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to 60V
SENSE, GATE Voltage . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 20V
, DIS, IS+, IS-, IS
FAULT ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . .2000V
, PWRGD Voltage. . . . . . . . . . . . . . .-0.3V to 100V
, CT . . . . . . . . . . . . . . . . . -0.3V to 8.0V
OUT
Thermal Resistance (Typical, Note 1) θ
14 Lead SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
Maximum Storage Temperature Range. . . . . . . . . . -65
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
Operating Conditions
Temperature Range (Industrial) . . . . . . . . . . . . . . . . . -40oC to 85oC
Temperature Range (Commercial). . . . . . . . . . . . . . . . . 0
Supply Voltage Range (Typical). . . . . . . . . . . . . . . . . . . 36V to 72V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
1. θ
JA
2. PWRGD is referenced to DRAIN; V
PWRGD-VDRAIN
o
C to 70oC
= 0V.
(oC/W)
JA
o
C to 150oC
o
o
C
C
Electrical Specifications V
PARAMETER SYMBOL DC PARAMETRIC V
PIN
DD
Supply Operating Range V Supply Current I
UVLO High V UVLO Low V UVLO hysteresis 1.9 V
GATE PIN
GATE Pin Pull-Up Current I GATE Pin Pull-Down Current I GATE Pin Pull-Down Current I GATE Pin Pull-Down Current I External Gate Drive (at 20V, at 80V) ∆V GATE High Threshold (PWRGD
SENSE PIN
Current Limit Trip Voltage V Hard Fault Trip Voltage HFTV HFTV = (V SENSE Pin Current I
UV PIN
UV Pin High Threshold Voltage V UV Pin Low Threshold Voltage V UV Pin Hysteresis V
= +48V, VEE = +0V Unless Otherwise Specified. All tests are over the full temperature range; either
DD
Commercial (0
/PWRGD active) V
o
C to 70oC) or Industrial (-40oC to 85oC). Typical specs are at 25oC.
TEST CONDITIONS MIN TYP MAX UNITS
DD
UV = 3V; OV = VEE; SENSE = VEE; VDD =
DD
80V
UVLOHVDD
UVLOLVDD
PU PD1 PD2 PD3
GATE(VGATE - VEE)
GH
CL
SENSEVSENSE
UVH
UVL
UVHY
Low to High transition 15 16.7 19 V High to Low transition 13 15.0 17 V
GATE Drive on, V GATE Drive off, UV or OV false 70 mA GATE Drive off, Over-Current Time-Out 70 mA GATE Drive off; Hard Fault, Vsense > 210mv 350 mA
V
VCL = (V
UV Low to High Transition 1.240 1.255 1.270 V UV High to Low Transition 1.105 1.120 1.145 V
- V
GATE
= 50mV - 0 -0.5 µA
GATE = VEE
, 20V <=VDD <=80V 12 13.6 15 V
GATE
- VEE) 405060mV
SENSE
- VEE) 210 mV
SENSE
20 - 80 V
-30 -50 -60 µA
2.6 4.0 mA
2.5 V
135 mV
6
ISL6142, ISL6152
www.BDTIC.com/Intersil
Electrical Specifications V
= +48V, VEE = +0V Unless Otherwise Specified. All tests are over the full temperature range; either
DD
Commercial (0
o
C to 70oC) or Industrial (-40oC to 85oC). Typical specs are at 25oC. (Continued)
PARAMETER SYMBOL
UV Pin Input Current I
OV pin
OV Pin High Threshold Voltage V OV Pin Low Threshold Voltage V OV Pin Hysteresis V OV Pin Input Current I
DRAIN Pin
Power Good Threshold (Enable PWRGD
/PWRGD
Output) Drain Input Bias Current I DRAIN Pin Comparator Trip Point
(PWRGD
ISL6142 (PWRGD
PWRGD
/PWRGD Inactive)
Pin: L Version)
Output Low Voltage V
Output Leakage I
ISL6152 (PWRGD Pin: H Version)
INUVVUV
OVH OVL
OVHY
INOVVOV
V
PG
DRAINVDRAIN
VDH
OL1
V
OL5
OH
= V
OV Low to High Transition 1.235 1.255 1.275 V OV High to Low Transition 1.215 1.230 1.255 V
= V
V
DRAIN
V
DRAIN
(V
DRAIN
(V
DRAIN
V
DRAIN
TEST CONDITIONS MIN TYP MAX UNITS
EE
- -0.05 -0.5 µA
25 mV
EE
- V
EE
- -0.05 -0.5 µA
0.80 1.30 2.00 V
= 48V 10 38 60 µA
- V
> 8.0V 7.0 8.0V 9.0 V
EE
- V
< V
EE)
- V
< V
EE)
= 48V, V
PG; IOUT PG; IOUT
PWRGD
= 1mA - 0.3 0.8 V
= 5mA - 1.50 3.0 V
= 80V - 0.05 10 µA
PWRGD Output Low Voltage (PWRGD-DRAIN) V PWRGD Output Impedance R
OL
OUT
V
DRAIN
(V
DRAIN
= 5V, I
- V
EE)
= 1mA - 0.80 1.0 V
OUT
< V
PG
4.5 6.2 7.5 k DIS PIN DIS Pin High Threshold Voltage V DIS Pin Low Threshold Voltage V DIS Pin Hysteresis V DIS Pin Input High Leakage I DIS Pin Input Low Current I
PIN
FAULT
FAULT
Output Voltage VF Output Leakage IF
FAULT
DISH
DISHY DISINH DISINL
DIS Low to High Transition 1.60 2.20 3.00 V DIS High to Low Transition 1.1 1.50 V
DISL
DIS Hysteresis 1.0 V Input Voltage = 5V 0.1 1.0 µA Input Voltage = 0V 10 µA
I = 1.6 mA 0.4 V
VOL
V = 5.0V 10 µA
IOH
CT PIN
CT Pin Charging Current I CT Pin Input Threshold V
IS PINS (IS-, IS+, IS
IS
Error VSENSE = 50mV, R7 = 400Ω, R8 = 404Ω 2.0 %
OUT
Error VSENSE = 200mV, R7 = 400Ω, R8 = 404Ω 1.0 %
IS
OUT
OUT
)
CTINLVCT
CT
= 0V 20 µA
7.5 8.5 9.5 V
ISOUT Offset Current VSENSE = 0.0mV, R7 = 400Ω, R8 = 404Ω 4.5 µA Output Voltage Range (IS
Pin) 058V
OUT
7
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