Datasheet HA-2520-883 Datasheet (intersil)

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Data Sheet October 11, 2004
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FN3735.3
Uncompensated, High Slew Rate Operational Amplifier
The HA-2520/883 is a monolithic operational amplifier which delivers an unsurpassed combination of specifications for slew rate, bandwidth and settling time. This dielectrically isolated amplifier is designed for closed loop gains of 3 or greater without external compensation. In addition, this high performance component also provides low offset current and high input impedance.
The 100V/µs (min) slew rate and fast settling time of this amplifier make it ideal for pulse amplification and data acquisition designs. To insure compliance with slew rate and transient response specifications, the device is 100% tested for AC performance characteristics over ful l temp erature. This device is a valuable component for RF and video circuitry requiring wideband operation. For accurate signal conditioning designs, the HA-2520/883’s superior dynamic specifications are complemented by 25nA (max) offset current and offset voltage adjust capability.
Part Number Information
PART
NUMBER
HA2-2520/883 -55
TEMP. RANGE
o
(
C) PACKAGE PKG. NO.
o
C to +125oC 8 Pin Can T8.C
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplification
Features
• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . .100V/µs (Min)
120V/µs (Min)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz (Min)
• Wide Gain Bandwidth. . . . . . . . . . . . . . . . . . .10MHz (Min)
20MHz (Typ)
• High Input Impedance . . . . . . . . . . . . . . . . . . 50M (Min)
100M (Typ)
• Low Offset Current. . . . . . . . . . . . . . . . . . . . . . 25nA (Min)
10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max)
Pinout
HA-2520/883
(METAL CAN)
TOP VIEW
COMP
8
BAL
-IN
+IN
1
2
-
+
3
4 V-
V+
7
OUT
6
BAL
5
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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All other trademarks mentioned are the property of their respective owners.
Copyright © Intersil Americas Inc. 2002, 2004. All Rights Reserved
HA-2520/883
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Absolu te Maximum Rat ings Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . .40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
Storage Temperature Range. . . . . . . . . . . . . . . . . -65
o
C to +150oC
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . .+300
o
C
o
C
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379
1. θ
JA
for details.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
= ±15V, R
SOURCE
PARAMETERS SYMBOL CONDITIONS
Input Offset Voltage
Input Bias Current +I
Input Offset Current
Common Mode
+CMR V+ = 5V, V- = -25V 1 +25
V
IO
-I
I
IO
VCM = 0V 1 +25oC-88mV
VCM = 0V, +RS = 100k, -RS = 100 1+25
B
VCM = 0V, +RS = 100, -RS = 100k 1+25
B
VCM = 0V, +RS = 100k, -RS = 100k 1+25
Range
-CMR V+ = 25V, V- = -5V 1 +25
Large Signal Voltage Gain
Common Mode Rejection Ratio
+A
VOL
-A
VOL
+CMRR ∆V
V
V
V
OUT
OUT
OUT
-CMRR ∆V V
OUT
Output Voltage
+V
OUT
RL = 2k 4+25
Swing
-V
OUT
RL = 2k 4+25
= 100Ω, R
LOAD
= 500kΩ, V
= 0V and +10V, RL = 2k 4+25
= 0V and -10V, RL = 2k 4+25
= +10V, V+ = +5V, V- = -25V,
CM
= -10V
= -10V, V+ = +25V, V- = -5V,
CM
= +10V
Thermal Resistance θ
Metal Can Package. . . . . . . . . . . . . . . . . 160oC/W 75oC/W
Package Power Dissipation Limit at +75
o
C for TJ +175oC
JA
Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Package Power Dissipation Derating Factor Above +75
θ
o
C
Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . .6.3mW/
V
1/2 (V+ - V-)
INCM
2k
R
L
= 0V, Unless Otherwise Specified.
OUT
GROUP A
HA-2520/883
SUBGROUPS TEMPERATURE
2, 3 +125oC, -55oC -10 10 mV
o
C -200 200 nA
o
2, 3 +125
2, 3 +125
C, -55oC -400 400 nA
o
C -200 200 nA
o
C, -55oC -400 400 nA
o
C -25 25 nA
2, 3 +125oC, -55oC -50 50 nA
o
C+10-V
o
2, 3 +125
2, 3 +125
C, -55oC+10 - V
o
C--10V
o
C, -55oC--10V
o
C10-kV/V
5, 6 +125oC, -55oC7.5 -kV/V
o
C10-kV/V
o
5, 6 +125
1+25
2, 3 +125
1+25
2, 3 +125
5, 6 +125
5, 6 +125
C, -55oC7.5 -kV/V
o
C80-dB
o
C, -55oC80 - dB
o
C80-dB
o
C, -55oC80 - dB
o
C10-V
o
C, -55oC10 - V
o
C--10V
o
C, -55oC--10V
JC
o
C
UNITSMIN MAX
2
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
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Device Tested at: V
SUPPLY
= ±15V, R
SOURCE
= 100Ω, R
PARAMETERS SYMBOL CONDITIONS
Output Current +I
Quiescent Power Supply Current
Power Supply
+PSRR ∆V
Rejection Ratio
-PSRR ∆V
Offset Voltage
+V
-I
+I
OUT
OUT
-I
IO
CC
CC
V
= -10V 4 +25oC10-mA
OUT
V
= +10V 4 +25oC--10mA
OUT
V
= 0V, I
OUT
V
= 0V, I
OUT
= 10V, V+ = +20V, V- = -15V, V+
SUP
= 0mA 1 +25oC-6mA
OUT
= 0mA 1 +25oC-6-mA
OUT
= +10V, V- = -15V
= 10V, V+ = +15V, V- = -20V, V+
SUP
= +15V, V- = -10V
Adj Note 1 1 +25oCV
Adjustment
-VIOAdj Note 1 1 +25oCV
NOTE:
2. Offset adjustment range is [V
(Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V.
IO
HA-2520/883
= 500kΩ, V
LOAD
= 0V, Unless Otherwise Specified.
OUT
GROUP A
SUBGROUPS TEMPERATURE
o
5, 6 +125
5, 6 +125
2, 3 +125
C, -55oC7.5 - mA
o
C, -55oC--7.5mA
o
C, -55oC-6.5mA
2, 3 +125oC, -55oC-6.5 - mA
1+25
o
2, 3 +125
C, -55oC80 - dB
1+25
o
2, 3 +125
2, 3 +125
2, 3 +125
C, -55oC80 - dB
o
C, -55oCVIO-1 - mV
o
C, -55oCVIO+1 - mV
HA-2520/883
UNITSMIN MAX
o
C80-dB
o
C80-dB
-1 - mV
IO
+1 - mV
IO
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
= ±15V, R
SOURCE
= 50Ω, R
PARAMETERS SYMBOL CONDITIONS
Slew Rate +SR V
-SR V
Rise and Fall Time T
R
T
F
Overshoot +OS V
-OS V
= -5V to +5V, 25% ≤ +SR ≤ 75% 7 +25oC 100 - V/µs
OUT
= +5V to -5V, 75% ≥ -SR ≥ 25% 7 +25oC 100 - V/µs
OUT
V
= 0 to +200mV, 10% ≤ TR 90% 7 +25oC - 50 ns
OUT
V
= 0 to -200mV, 10% ≤ TF 90% 7 +25oC - 50 ns
OUT
= 0 to +200mV 7 +25oC-40%
OUT
= 0 to -200mV 7 +25oC-40%
OUT
LOAD
= 2kΩ, C
LOAD
= 50pF, A
= +3V/V, Unless Otherwise Specified.
VCL
GROUP A
SUBGROUPS TEMPERATURE
8A, 8B +125
8A, 8B +125
8A, 8B +125
8A, 8B +125
8A, 8B +125
8A, 8B +125
HA-2520/883
UNITSMIN MAX
o
C, -55oC84 -V/µs
o
C, -55oC84 -V/µs
o
C, -55oC - 55 ns
o
C, -55oC - 55 ns
o
C, -55oC-45%
o
C, -55oC-45%
3
HA-2520/883
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TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
IN
= ±15V, R
VCM = 0V 1 +25oC50-M
= 200mV, fO = 10kHz 1 +25oC10-MHz
O
= 200mV, fO = 1MHz 1 +25oC10-MHz
V
O PEAK
= 2kΩ, CL = 50pF 1 -55oC to +125oC+3 - V/V
L
= 0V, I
OUT
Device Characterized at: V
PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE
Differential Input Resistance
Full Power Bandwidth
Full Power Bandwidth
Minimum Closed Loop Stable Gain
Quiescent Power Consumption
NOTES:
3. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.
4. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
5. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
SUPPLY
R
GBWP V
FPBW V
CLSG R
PC V
= 2kΩ, C
LOAD
= 10V 1, 2 +25oC1.6-MHz
= 0mA 1, 3 -55oC to +125oC-195mW
OUT
= 50pF, AV 3, C
LOAD
= 0pF, Unless Otherwise Specified.
COMP
).
PEAK
HA-2520/883
UNITSMIN MAX
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 4), 2, 3, 4, 5, 6, 7, 8A, 8B Group A Test Requirements 1, 2, 3, 4, 5, 6, 7, 8A, 8B Groups C and D Endpoints 1
NOTE:
6. PDA applies to Subgroup 1 only.
4
Die Characteristics
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HA-2520/883
DIE DIMENSIONS:
67 x 57 x 19 mils ± 1 mils 1700 x 1440 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1.5kÅ
Metallization Mask Layout
COMP V+ OUT BAL
WORST CASE CURRENT DENSITY:
5
2
0.26 x 10
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
HA-2520/883: 40
PROCESS:
Bipolar Dielectric Isolation
A/cm
BAL -IN +IN V-
5
Metal Can Packages (Can)
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HA-2520/883
REFERENCE PLANE
A
ØD ØD1
F
Q
Øb1
NOTES:
1. (All leads) Øb applies between L1 and L2. Øb1 applies between L2 and 0.500 from the reference plane. Diameter is uncontrolled in L1 and beyond 0.500 from the reference plane.
2. Measured from maximum diameter of the product.
α is the basic spacing from the centerline of the tab to terminal 1
3. and β is the basic spacing of each lead or lead position (N -1 places) from
4. N is the maximum number of terminal positions.
5. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
6. Controlling dimension: INCH.
α, looking at the bottom of the package.
L L2
L1 A A
Øe
Øb1 Øb
BASE AND SEATING PLANE
BASE METAL LEAD FINISH
SECTION A-A
Øb2
e1
ØD2
2
β
N
1
α
k
T8.C MIL-STD-1835 MACY1-X8 (A1)
8 LEAD METAL CAN PACKAGE
INCHES MILLIMETERS
SYMBOL
A 0.165 0.185 4.19 4.70 -
Øb 0.016 0.019 0.41 0.48 1
k1
C
L
Øb1 0.016 0.021 0.41 0.53 1 Øb2 0.016 0.024 0.41 0.61 -
ØD 0.335 0.375 8.51 9.40 ­ØD1 0.305 0.335 7.75 8.51 ­ØD2 0.110 0.160 2.79 4.06 -
e 0.200 BSC 5.08 BSC -
e1 0.100 BSC 2.54 BSC -
F - 0.040 - 1.02 ­k 0.027 0.034 0.69 0.86 -
k1 0.027 0.045 0.69 1.14 2
L 0.500 0.750 12.70 19.05 1 L1 - 0.050 - 1.27 1 L2 0.250 - 6.35 - 1
Q 0.010 0.045 0.25 1.14 -
α
β 45
N8 84
45o BSC 45o BSC 3
o
BSC 45o BSC 3
NOTESMIN MAX MIN MAX
Rev. 0 5/18/94
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is ca utioned to verify that data she ets are current before pl acing orders. Information fur nished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or othe rwise under any patent or patent rights of Intersil or its subsidiari es.
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