International Rrectifier IRS2336D User Manual

May 9, 2008

IRS2336(D)

Features

• Drives up to six IGBT/MOSFET power devices

• Gate drive supplies up to 20 V per channel

• Integrated bootstrap functionality (IRS2336(4)D)

• Over-current protection

• Over-temperature shutdown input

• Advanced input filter

• Integrated deadtime protection

• Shoot-through (cross-conduction) protection

Undervoltage lockout for V

•

• Enable/disable input and fault reporting

• Adjustable fault clear timing

• Separate logic and power grounds

• 3.3 V input logic compatible

• Tolerant to negative transient voltage

• Designed for use with bootstrap power supplies

• Matched propagation delays for all channels

• -40°C to 125°C operating range

• RoHS compliant

• Lead-Free

CC

& V

BS

Typical Applications

• Appliance motor drives

• Servo drives

• Micro inverter drives

• General purpose three phase inverters

Typical Connection Diagram

HIGH VOLTAGE 3 PHASE GATE DRIVER IC

Product Summary

Topology 3 Phase

V

Io+ & I

tON & t

Deadtime (typical) 275 ns

≤ 600 V

OFFSET

IRS2336(D) 10 V – 20 V

IRS23364D 11.5 V – 20 V

(typical) 200 mA & 350 mA

o-

(typical) 530 ns & 530 ns

OFF

OUT

Package Options

28-Lead PDIP 28-Lead SOIC Wide Body

48-Lead MLPQ7X7 44-Lead PLCC (without 14 leads) (without 12 leads)

IRS23364D

IRS2336x(D) Family

Table of Contents Page

Description 3

Feature Comparison 3

Simplified Block Diagram 4

Typical Application Diagram 4

Qualification Information 5

Absolute Maximum Ratings 6

Recommended Operating Conditions 7

Static Electrical Characteristics 8-9

Dynamic Electrical Characteristics 10

Functional Block Diagram 11-12

Input/Output Pin Equivalent Circuit Diagram 13-14

Lead Definitions 15-16

Lead Assignments 17

Application Information and Additional Details 18-34

Parameter Temperature Trends 35-38

Package Details 39-42

Tape and Reel Details 43-45

Part Marking Information 46

Ordering Information 47

2

IRS2336x(D) Family

Description

The IRS2336xD are high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and three low-side referenced output channels for 3-phase applications. This IC is designed to be used with low-cost bootstrap power supplies; the bootstrap diode functionality has been integrated into this device to reduce the component count and the PCB size. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs (down to 3.3 V logic). A current trip function which terminates all six outputs can be derived from an external current sense resistor. Enable functionality is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that a fault (e.g., over-current, over-temperature, or undervoltage shutdown event) has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum deadtime circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operate up to 600 V.

Feature Comparison: IRS2336xD Family

Part Number Input Logic UVLO V

IRS2336(D) HIN/N, LIN/N 8.9 V/ 8.2 V 0.46 V 530 ns, 530 ns 10 V – 20 V

IRS23364D HIN, LIN 11.1 V/ 10.9 V 0.46 V 530 ns, 530 ns 11.5 V – 20 V

t

IT,TH

ON

, t

V

OFF

OUT

3

Simplified Block Diagram

IRS2336x(D) Family

Typical Application Diagram

4

Qualification Information†

Qualification Level

Moisture Sensitivity Level

IRS2336x(D) Family

Industrial††

Comments: This family of ICs has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level.

SOIC28W

MLPQ7X7

PLCC44

(per IPC/JEDEC J-STD-020)

MSL3

†††

, 260°C

†††

, 245°C

Not applicable

ESD

IC Latch-Up Test

RoHS Compliant

PDIP28

Human Body Model

Machine Model

Charged Device Model

††††

(per JEDEC standard JESD22-A114)

(per EIA/JEDEC standard EIA/JESD22-A115)

(per JEDEC standard JESD22-C101)

(non-surface mount package style)

Class 2

Class B

Class IV

Class I, Level A

(per JESD78)

Yes

† ††

††† Higher MSL ratings may be available for the specific package types listed here. Please contact your

†††† Charged Device Model classification is based on SOIC28W package.

Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information.

International Rectifier sales representative for further information.

5

IRS2336x(D) Family

V

ns

W

ºC

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to V

unless otherwise stated in the table. The thermal resistance

SS

and power dissipation ratings are measured under board mounted and still air conditions. Voltage clamps are included between V

& COM (25 V), VCC & VSS (20 V), and VB & VS (20 V).

CC

Symbol Definition Min Max Units

V

CC

V

IN

V

RCIN

V

B

VS High-side floating well supply return voltage

Low side supply voltage -0.3

Logic input voltage (HIN, LIN, ITRIP, EN)

IRS2336(D) VSS-0.3 VSS+5.2 IRS23364D V

-0.3 VCC+0.3

SS

RCIN input voltage VSS-0.3 VCC+0.3

High-side floating well supply voltage -0.3

-20†

V

B

620

V

20

+0.3

B

†

VHO Floating gate drive output voltage VS-0.3 VB+0.3 VLO Low-side output voltage COM-0.3 VCC+0.3

V

Fault output voltage VSS-0.3 VCC+0.3

FLT

COM Power ground VCC-25 VCC+0.3 dVS/dt Allowable VS offset supply transient relative to VSS PW

High-side input pulse width 500

HIN

28-Lead PDIP 28-Lead

PD

Package power dissipation @ T

≤+25ºC

A

SOICW 44-Lead PLCC 48-Lead MLPQ7X7 28-Lead PDIP 28-Lead

Rth

Thermal resistance, junction to ambient

JA

SOICW 44-Lead PLCC 48-Lead MLPQ7X7

T

J

T

S

T

L

Junction temperature Storage temperature -55 150 Lead temperature (soldering, 10 seconds)

—

— — 1.6 — — 2.0 — — 78 — — —

—

50 V/ns —

1.5

2.0

83

63

ºC/W

63

150

300

† All supplies are tested at 25 V. An internal 20 V clamp exists for each supply.

6

IRS2336x(D) Family

Recommended Operating Conditions

For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to V (V

-COM) = (VB-VS) = 15 V.

CC

Symbol Definition Min Max Units

V

CC

V

IN

V

B

VS

VS(t)

Low-side supply voltage

HIN, LIN, & EN input voltage

High-side floating well supply voltage

High-side floating well supply offset voltage Transient high-side floating supply voltage

VHO Floating gate drive output voltage Vs V

VLO Low-side output voltage COM VCC

COM Power ground -5 5

V

FAULT output voltage VSS V

FLT

V

RCIN input voltage VSS V

RCIN

V

ITRIP input voltage VSS V

ITRIP

T

A

Ambient temperature -40 125 ºC

†

Logic operation for

V

of –8 V to 600 V. Logic state held for

S

DT97-3 for more details.

†† Operational for transient negative V

the Application Information section of this datasheet for more details.

unless otherwise stated in the table. The offset rating is tested with supplies of

SS

IRS2336(D) 10 20 IRS23364D 11.5 20 IRS2336(D) VSS+5 IRS23364D

VSS

V

CC

IRS2336(D) VS+10 VS+20 IRS23364D V

†

††

V

of –8 V to –VBS. Please refer to Design Tip

S

of VSS - 50 V with a 50 ns pulse width. Guaranteed by design. Refer to

S

+11.5 VS+20

S

COM-8 600

-50 600

B

CC

+5

SS

V

7

IRS2336x(D) Family

V

BSUV

Static Electrical Characteristics

(VCC-COM) = (VB-VS) = 15 V. TA = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to V

and are applicable to all six channels. The VO and IO parameters are referenced to respective VS and COM and

SS

are applicable to the respective output leads HO or LO. parameters are referenced to V

.

S

Symbol Definition Min Typ Max Units Test Conditions

supply undervoltage positive

V

CCUV

V

CCUV

V

CCUVHY

V

BSUV+

V

BSUV-

V

BSUVHY

ILK

I

QBS

I

QCC

CC

+

going threshold

supply undervoltage negative

V

CC

-

going threshold

supply undervoltage

V

CC

hysteresis V

BS

going threshold V

BS

going threshold

supply undervoltage

V

BS

hysteresis

supply undervoltage positive

supply undervoltage negative

High-side floating well offset supply leakage Quiescent V

Quiescent V

supply current

BS

supply current

CC

VOH High level output voltage drop, V

IRS2336(D) 8 8.9 9.8 IRS23364D 10.4 11.1 11.6 IRS2336(D) 7.4 8.2 9 IRS23364D 10.2 10.9 11.4 IRS2336(D) 0.3 0.7 IRS23364D IRS2336(D) 8 8.9 9.8 IRS23364D 10.4 11.1 11.6 IRS2336(D) 7.4 8.2 9 IRS23364D 10.2 10.9 11.4 IRS2336(D) 0.3 0.7 IRS23364D

IRS2336 IR2336(4)D

BIAS-VO

VOL Low level output voltage drop, VO

I

Output high short circuit pulsed current 120 200 —

o+

I

Output low short circuit pulsed current 250 350 —

o-

VIH

V

IN,CLAMP

I

HIN+

I

HIN-

I

LIN+

I

LIN-

V

RCIN,TH

V

RCIN,HY

I

RCIN

R

ON,RCIN

VIL

Logic “0” input voltage Logic “1” input voltage Logic “1” input voltage Logic “0” input voltage Input voltage clamp (HIN, LIN, ITRIP and EN)

Input bias current (HO = High)

Input bias current (HO = Low)

Input bias current (LO = High)

Input bias current (LO = Low)

RCIN positive going threshold RCIN hysteresis

RCIN input bias current

RCIN low on resistance

IRS2336(D) 4.8 5.2 5.65

IRS2336(D) IRS23364D IRS2336(D) IRS23364D IRS2336(D) IRS23364D IRS2336(D) IRS23364D

The

parameters are referenced to VSS. The

V

CCUV

—

0.2

—

V NA

— — — — — — — — —

2.5

—

— — — — — — — — — — — — — —

0.2

70 120

2 3 3 4

—

50 V

µA

All inputs are in the

mA

B

0.90 1.4 V

0.40 0.6 V V

mA

—

0.8

V

O

=15 V,VIN=5 V,

V

O

150 200 VIN = 0 V 120 165 110 150

150 200 120 165

1

µA

110 150

—

8 3

50 100 Ω

1

— —

1 µA V

V

RCIN

= VS = 600 V

off state

I

= 20 mA

O

=0 V,VIN=0 V,

PW ≤ 10 µs

NA

I

= 100 µA

IN

V

= 4 V

IN

V

= 0 V

IN

V

= 4 V

IN

= 0 V

V

IN

NA

= 0 V or 15 V

I = 1.5 mA

8

IRS2336x(D) Family

Static Electrical Characteristics (continued)

Symbol Definition Min Typ Max Units Test Conditions

V

ITRIP positive going threshold 0.37 0.46 0.55

IT,TH+

V

ITRIP negative going threshold

IT,TH-

V

ITRIP hysteresis

IT,HYS

I

“High” ITRIP input bias current

ITRIP+

I

“Low” ITRIP input bias current

ITRIP-

V

Enable positive going threshold

EN,TH+

V

Enable negative going threshold 0.8

EN,TH-

I

“High” enable input bias current

EN+

I

“Low” enable input bias current

EN-

R

FAULT low on resistance

ON,FLT

RBS

Internal BS diode Ron (IRS2336(4)D)

IRS2336(D) IRS23364D

— —

0.4

0.07

5 20 5 40

— — — —

—

— —

5 20

120 165

— — —

—

50 100 I = 1.5 mA

200 —

— —

1

2.5

—

1

V

µA

V

µA

Ω

NA

VIN = 4 V

VIN = 0 V

NA

VIN = 4 V

VIN = 0 V

NA

9

IRS2336x(D) Family

Dynamic Electrical Characteristics

VCC= VB = 15 V, VS = VSS = COM, TA = 25oC, and CL = 1000 pF unless otherwise specified.

Symbol Definition Min Typ Max Units Test Conditions

t

ON

t

OFF

t t

t

FIL,IN

tEN

t

FILTER,EN

t

FLTCLR

t

ITRIP

tBL ITRIP blanking time

t

FLT

DT Deadtime 190 275 420

MDT

MT

PM

† The minimum width of the input pulse is recommended to exceed 500 ns to ensure the filtering time of the

†† This parameter applies to all of the channels. Please see the application section for more details. ††† PM is defined as PW

Turn-on propagation delay 400 530 750 Turn-off propagation delay 400 530 750 Turn-on rise time

R

Turn-off fall time

F

Input filter time (HIN, LIN, ITRIP)

†

Enable low to output shutdown propagation delay

— —

200 350 510

350 460 650 V

125 190

50 75

Enable input filter time 100 200

FAULT clear time RCIN: R = 2 MΩ, C = 1 nF

ITRIP to output shutdown propagation delay

1.3 1.65 2 ms

500 750 1200 V

—

400

ITRIP to FAULT propagation delay 400 600 950

††

DT matching

Delay matching time (t

Pulse width distortion

†††

ON

††

, t

)

OFF

— — — — 50

— —

input filter is exceeded.

- PW

IN

OUT

.

—

60

75

ns

= 0 V & 5 V

V

IN

= 0 V or 5 V

IN, VEN

NA

= 0 V or 5 V

V

IN

V

= 0 V

ITRIP

= 5 V

ITRIP

= 0 V or 5 V

V

IN

V

= 5 V

ITRIP

= 0 V & 5 V without

V

IN

external deadtime

V

= 0 V & 5 V with external

IN

deadtime larger than DT

PW input=10 µs

10

Functional Block Diagram: IRS2336(D)

IRS2336x(D) Family

Note: IRS2336 is without the “Integrated BootFET”

11

Functional Block Diagram: IRS23364D

IRS2336x(D) Family

12

Input/Output Pin Equivalent Circuit

IRS2336x(D) Family

Diagrams: IRS2336(D)

V

CC

ITRIP or EN

V

SS

ESD

Diode

ESD

Diode

R

PD

13

Input/Output Pin Equivalent Circuit

IRS2336x(D) Family

Diagrams: IRS23364D

14

IRS2336x(D) Family

Lead Definitions: IRS2336(D)

Symbol Description

VCC Low-side supply voltage

VSS Logic ground

VB1 High-side gate drive floating supply (phase 1)

VB2 High-side gate drive floating supply (phase 2)

VB3 High-side gate drive floating supply (phase 3)

VS1 High voltage floating supply return (phase 1)

VS2 High voltage floating supply return (phase 2)

VS3 High voltage floating supply return (phase 3)

HIN1/N Logic inputs for high-side gate driver outputs (phase 1); input is out-of-phase with output

HIN2/N Logic inputs for high-side gate driver outputs (phase 2); input is out-of-phase with output

HIN3/N Logic inputs for high-side gate driver outputs (phase 3); input is out-of-phase with output

LIN1/N Logic inputs for low-side gate driver outputs (phase 1); input is out-of-phase with output

LIN2/N Logic inputs for low-side gate driver outputs (phase 2); input is out-of-phase with output

LIN3/N Logic inputs for low-side gate driver outputs (phase 3); input is out-of-phase with output

HO1 High-side driver outputs (phase 1)

HO2 High-side driver outputs (phase 2)

HO3 High-side driver outputs (phase 3)

LO1 Low-side driver outputs (phase 1)

LO2 Low-side driver outputs (phase 2)

LO3 Low-side driver outputs (phase 3)

COM Low-side gate drive return

FAULT/N

EN

ITRIP

RCIN

Indicates over-current, over-temperature (ITRIP), or low-side undervoltage lockout has occurred. This pin has negative logic and an open-drain output. The use of over-current and over-

temperature protection requires the use of external components. Logic input to shutdown functionality. Logic functions when EN is high (i.e., positive logic). No effect on FAULT and not latched.

Analog input for over-current shutdown. When active, ITRIP shuts down outputs and activates

FAULT and RCIN low. When ITRIP becomes inactive, FAULT stays active low for an externally

set time t An external RC network input used to define the FAULT CLEAR delay (t equal to R*C. When RCIN > 8 V, the FAULT pin goes back into an open-drain high-impedance state.

, then automatically becomes inactive (open-drain high impedance).

FLTCLR

approximately

FLTCLR)

15