International Rrectifier IRS2153DSPbF User Manual

Data Sheet PD No.60238

IRS2153D(S)PbF

SELF-OSCILLATING HALF-BRIDGE DRIVER IC

Features Product Summary

Integrated 600V Half-Bridge Gate Driver

  CT, RT programmable oscillator  15.4V Zener Clamp on VCC  Micropower Startup  Non-latched shutdown on CT pin (1/6th VCC)

Internal bootstrap FET

  Excellent Latch Immunity on All Inputs & Outputs

 +/- 50V/ns dV/dt immunity  ESD Protection on All Pins  8-lead SOIC or PDIP package  1.1 usec (typ.) internal deadtime

Description

The IRS2153D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.

Typical Connection Diagram

+ AC Rectified Line



VOFFSET 600V Max

Duty Cycle 50%

Driver source/sink

current

Vclamp 15.4V typ.

Deadtime 1.1us typ.

180/260mA typ.

Package

IRS2153DPBF IRS2153DSPBF

PDIP8 SO8

RVCC

CVCC

- AC Rectified Line

VCC

RT

CT

COM

1

RT

2

CT

3

IRS2153D

4

VB

8

HO

7

VS

6

5

LO

CBOOT

MHS

L

RL

MLS

1

IRS2153D(S)PbF

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.

Parameter

Symbol Definition Min. Max. Units

VB High Side Floating Supply Voltage -0.3 625 V

VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 V

VHO High-Side Floating Output Voltage VS – 0.3 VB + 0.3 V

VLO Low-Side Output Voltage -0.3 VCC + 0.3 V

IRT R

VRT R

VCT C

ICC Supply Current (Note 1) --- 20 mA

IOMAX Maximum allowable current at LO and HO due to external

dVS/dt

PD

R

Thermal Resistance, Junction to Ambient, 8-Pin DIP --- 85 ºC/W

θJA

R

Thermal Resistance, Junction to Ambient, 8-Pin SOIC --- 128 ºC/W

θJA

TJ Junction Temperature -55 150

TS Storage Temperature -55 150 ºC

TL Lead Temperature (Soldering, 10 seconds) --- 300

Pin Current -5 5 mA

T

Pin Voltage -0.3 VCC + 0.3 V

T

Pin Voltage -0.3 VCC + 0.3 V

T

-500 500 power transistor Miller effect. Allowable Offset Voltage Slew Rate -50 50 V/ns

Maximum Power Dissipation @ T

≤ +25ºC, 8-Pin DIP

A

≤ +25ºC, 8-Pin SOIC

A

--- 1.0 W

--- 0.625 W

Note 1:

This IC contains a zener clamp structure between the chip V

and COM which has a nominal

CC

breakdown voltage of 15.4V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V

specified in the Electrical Characteristics section.

CLAMP

2

f

IRS2153D(S)PbF

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Parameter

Symbol Definition Min. Max. Units

VBS High Side Floating Supply Voltage VCC - 0.7 V

VS Steady State High Side Floating Supply Offset Voltage -3.0 (Note 2) 600 V

VCC Supply Voltage V

ICC Supply Current (Note 3) 5 mA

TJ Junction Temperature -40 125 ºC

CCUV

+0.1V V

+

CC CLAMP

V

CLAMP

V

Note 2:

Note 3:

Care should be taken to avoid output switching conditions where the V ground by more than 5V.

Enough current should be supplied to the clamping the voltage at this pin.

pin of the IC to keep the internal 15.6V zener diode

V

CC

node flies inductively below

S

Recommended Component Values

Parameter

Symbol Component Min. Max. Units

RT Timing Resistor Value 1

CT C

Pin Capacitor Value 330 --- pF

T

---

kΩ

IRS2153D Frequency vs. RT

Frequency (Hz)

1000000

100000

10000

CT Values

330p

470pF

1nF

1000

2.2nF

4.7nF

100

10nF

10

1000 10000 100000 1000000

RT (Ohm)

3

IRS2153D(S)PbF

Electrical Characteristics

VBIAS (VCC, VBS) = 14V, CT = 1 nF, VS=0V and TA = 25°C unless otherwise specified. The output voltage and current (VO and IO) parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

Symbol Definition Min Typ Max Units

Low Voltage Supply Characteristics

V

CC

Floating Supply Characteristics

V

Rising VCC Undervoltage Lockout Threshold 10.2 10.8 11.5

+

CCUV

-

Falling VCC Undervoltage Lockout Threshold 8.3 8.8 9.4 V

CCUV

CCUVHYS

I

QCCUV

VCC Undervoltage Lockout Hysteresis 1.6 2.0 2.4

Micropower Startup V

Supply Current --- 130 170 µA

CC

IQCC Quiescent VCC Supply Current --- 800 1000 µA

ICC VCC Supply Current --- 1.8 --- mA

VCC Zener Clamp Voltage 14.4 15.4 16.8 V ICC = 5mA

CLAMP

I

Quiescent VBS Supply Current --- 60 80 µA

QBS

VBS Supply Undervoltage Positive Going

BSUV+

8.0 9.0 9.5 V

Threshold

Test Conditions

V

≤ V

CC

R

= 36.9kΩ

T

CCUV-

V

VBS Supply Undervoltage negative Going

BSUV-

7.0 8.0 9.0

Threshold

ILK Offset Supply Leakage Current --- --- 50

µA

VB = VS = 600V

Oscillator I/O Characteristics

f

Oscillator Frequency 18.4 19.0 19.6 kHz

OSC

88 93 100

d RT Pin Duty Cycle --- 50 --- %

ICT CT Pin Current ---

I

UV-Mode CT Pin Pulldown Current 0.20 0.30 0.6 mA

CTUV

V

Upper CT Ramp Voltage Threshold --- 9.32 ---

CT+

V

Lower CT Ramp Voltage Threshold --- 4.66 --- V

CT-

V

CT Voltage Shutdown Threshold 2.2 2.3 2.4

CTSD

V

High-Level RT Output Voltage, VCC - VRT --- 10 50 mV I

RT+

0.02

1.0

µA

--- 100 300 mV I

V

Low-Level RT Output Voltage --- 10 50 mV I

RT-

--- 100 300 mV I

V

UV-Mode RT Output Voltage --- 0 100 mV

RTUV

V

SD-Mode RT Output Voltage, VCC - VRT --- 10 50 mV I

RTSD

--- 100 300 mV I

R

= 36.5kΩ

T

R

= 7.15kΩ

T

fo < 100kHz

VCC = 7V

RT = -100µA

RT = -1mA

RT = 100µA

RT = 1mA

V

≤ V

CC

CCUV-

RT = -100µA,

VCT = 0V

RT = -1mA,

VCT = 0V

4