Datasheet IRF7530 Datasheet (International Rectifier)

● Trench Technology

● Ultra Low On-Resistance

● Dual N-Channel MOSFET

● Very Small SOIC Package

● Low Profile (<1.1mm)

● Available in Tape & Reel

S1

G1

S2

G2

PD-93760B

IRF7530

HEXFET® Power MOSFET

1

2

3

4

8

D1

V

7

D1

6

D2

5

D2

R

DS(on)

= 20V

DSS

= 0.030Ω

Description

Top View

New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.

The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily

Micro8

into extremely thin application environments such as portable
electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.4
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 4.3 A
I

DM

PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.80

E

AS

V

GS

T

J, TSTG

Drain- Source Voltage 20 V

Pulsed Drain Current Q 40

Linear Derating Factor 10 mW/°C
Single Pulse Avalanche EnergyT 33 mJ
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-AmbientS 100 °C/W

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02/16/01

IRF7530

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250uA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.030 V
––– ––– 0.045 VGS = 2.5V, ID = 4.6A R

Ω

= 4.5V, ID = 5.4A R

GS

Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA
Forward Transconductance 13 ––– ––– SVDS = 10V, ID = 5.4A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V

––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C

µA

nA

GS

= 12V

Total Gate Charge ––– 18 26 ID = 5.4A
Gate-to-Source Charge ––– 3.4 5.1 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 3.4 5.1 VGS = 4.5V R
Turn-On Delay Time ––– 8.5 ––– VDD = 10V
Rise Time ––– 11 ––– ID = 1.0A
Turn-Off Delay Time ––– 36 ––– RG = 6.0Ω

ns

Fall Time ––– 16 ––– RD = 10Ω R
Input Capacitance ––– 1310 ––– VGS = 0V
Output Capacitance ––– 180 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) Q p-n junction diode.

––– –––

1.3

––– ––– 40

A

G

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V R
Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 1.3A
Reverse RecoveryCharge ––– 13 20 nC di/dt = 100A/µs R

Notes:

Q Repetitive rating; pulse width limited by

S When mounted on 1 inch square copper board, t<10 sec

max. junction temperature.

R Pulse width ≤ 400µs; duty cycle ≤ 2%.

T Starting T

RG = 25Ω, I

= 25°C, L = 2.6mH

J

= 5.0A. (See Figure 10)

AS

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D

S

IRF7530

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

100

VGS

TOP

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V



2.50V

BOTTOM

2.25V

2.25V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

VGS

TOP

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V



2.50V

BOTTOM

2.25V

2.25V

20µs PULSE WIDTH



V , Drain-to-Source Voltage (V)

DS

°

T = 150 C

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

5.0A

I =



D

°

T = 25 C



J

°

T = 150 C



J

D

I , Drain-to-Source Current (A)

V = 15V

DS



10

2.0 2.5 3.0 3.5 4.0 4.5

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

4.5V



GS

°

Vs. Temperature

www.irf.com 3

IRF7530

)

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd



V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

C

iss

C



oss

C



rss

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

5.4A

I =

5.0A

D



V = 16V

DS

V = 10V

DS

8

6

4

2

GS

V , Gate-to-Source Voltage (V)

0

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

G



V = 4V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED



BY R

DS(on

100

°

T = 150 C



J

10

°

T = 25 C



J

SD

I , Reverse Drain Current (A)

V = 0 V



1

0.5 1.0 1.5 2.0

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

10

D

I , Drain Current (A)I , Drain Current (A)

1

°

= 25 C

A

T T= 150 C



Single Pulse

0.1

0.1 1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area



10us



100us



1ms



10ms

Forward Voltage

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IRF7530

5.0

4.0

3.0

2.0

D

I , Drain Current (A)

1.0

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1000

80

TOP



60

40

20

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

I

D

2.2A

4.0A

5.0A

°

100

thJA

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

Thermal Response (Z )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

P

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7530

0.04

)

Ω

0.03

0.02

, Drain-to -Source Voltage (

Id = 5.0A

)

0.10

Ω

0.08

0.06

0.04

VGS= 2.5V

DS(on)

R

0.01

2.0 3.0 4.0 5.0 6.0 7.0

V

Gate -to -Source Voltage ( V )

GS,

Fig 12. On-Resistance Vs. Gate Voltage

( on) , Drain-to-Source On Resistance (

DS

0.02

R

0 10 20 30 40

VGS, Gate-to-Source Voltage (V)

VGS = 4.5V

Fig 13. On-Resistance Vs. Drain Current

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IRF7530

Micro8

Package Outline

Dimensions are shown in millimeters (inches)

D

3

- B -

3

- C ­B 8X

NOTES:
1 DIMENSIONING AND TOL E RANC ING PER A NSI Y14.5M-1982.
2 CONTROLLING DIMENSION : INCH.
3 D IM E N SIO NS DO NOT IN C L U DE M OLD F L A S H .

Micro8

8 7 6 5

E

- A ­1 2 3 4

e

6X

0.08 (.003) M C A S B S

Part Marking Information

e 1

A 1

H

0.2 5 ( .01 0 ) M A M

A

0.10 (.004)

EXAMPLE: T HIS IS AN IRF7501

LO T CODE (XX)

LEAD ASSIGNMENTS

D D D D D1 D1 D2 D2

8 7 6 5 8 7 6 5

SINGLE

1 2 3 4 1 2 3 4

S S S G

θ

8X

DATE CODE (YW)
Y = YE AR
W = WEEK

DUAL

S1 G1 S2 G2

L

INCH ES M ILL IM E TERS

DIM

MIN M AX MIN M A X
A .036 .044 0.91 1.11
A1 .004 .008 0.10 0.20
B .010 .014 0.25 0.36
C .005 .007 0.13 0.18
D .116 .120 2.95 3.05
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .116 .120 2.95 3.05
H .188 .198 4.78 5.03
L .016 .026 0.41 0.66

0° 6° 0° 6°

θ

RECOM M ENDE D FO OT PRINT

1.04
( .041 )
8 X

C

8X

3.20
( .126 )

0. 3 8
( .015 )

4.24
( .167 )

0.65
( .0256 )

8X

6X

5.28
( .208 )

PART NUMBER

WW = (1-2 6) IF PRECEDED BY LAST D I GIT OF CALENDAR YEAR

DATE CODE EXAMPLE S :

YWW = 9503 = 5C
YWW = 9532 = EF

1995
1996
1997
1998
1999
2000

WW = (27-52) IF PRECEDED BY A LETTER

1995
1996
1997
1998
1999
2000

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WORK

WYEAR Y

WEEK

01

A2001 1

02

B2002 2

03

C2003 3

04

24
25 Y
26 Z

WORK
WEEK

27
28
29
30

50
51 Y
52 Z

D1994 4

X

WYEAR
A2001 A

B2002 B
C2003 C
D1994 D

X

5
6
7
8
9
0

Y

E
F
G
H
J
K

IRF7530

Micro8

Tape & Reel Information

Dimensions are shown in millimeters (inches)

T ERM IN AL N UM BER 1

8.1 ( .318 )

7.9 ( .312 )

NOT ES:

1. OUTLINE CONFOR M S TO EIA-481 & EIA-541.

2. CONTROLLING DIMENSIO N : MILLIM ETER.

12.3 ( .484 )

11.7 ( .461 )

FEED DIRECTIO N

330.00
(12.992)
MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. O U TLINE CONFO R MS TO EIA-481 & EIA-541.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/01

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