查询IRF1704供应商
PD -94012B
Benefits
l 200°C Operaing Temperature
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Repetitive Avalanche Allowed
up to Tj Max
l Automotive Qualified (Q101)
AUTOMOTIVE MOSFET
HEXFET® Power MOSFET
D
G
S
IRF1704
V
= 40V
DSS
R
= 0.004Ω
DS(on)
ID = 170A
Description
Specifically designed for Automotive applications, this HEXFET® power
MOSFET has a 200°C max operating temperature with a Stripe Planar
design that utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this HEXFET
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200°C
operating temperature in a plastic package. At high ambient temperatures, the
IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices
in the same package outline. This makes this part ideal for existing and
emerging under-the-hood automotive applications such as Electric Power
Steering (EPS), Fuel / Water Pump Control and wide variety of other
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 170
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A
I
DM
PD @TC = 25°C Power Dissipation 230 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 1.9 V/ns
T
J
T
STG
T
LEAD
Pulsed Drain Current 680
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 670 mJ
Avalanche Current 100 A
Repetitive Avalanche Energy 23 mJ
Operating Junction and -55 to + 200
Storage Temperature Range
Lead Temperature 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
www.irf.com 1
®
power
TO-220AB
°C
02/13/02
IRF1704
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 2320 ––– VGS = 0V, VDS = 0V to 32V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
RG = 25Ω, I
I
≤ 100A, di/dt ≤ 150A/µs, V
SD
TJ ≤ 200°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Drain-to-Source Breakdown Voltage 40 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.004 Ω VGS = 10V, ID = 100A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 110 ––– ––– SVDS = 25V, ID = 100A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 175°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 40V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– 170 260 ID = 100A
Gate-to-Source Charge ––– 42 63 nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– 39 59 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 16 ––– VDD = 20V
Rise Time ––– 120 ––– ID = 100A
Turn-Off Delay Time ––– 73 ––– RG = 2.5Ω
ns
Fall Time ––– 37 ––– VGS = 10V,See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
4.5
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 6950 ––– VGS = 0V
Output Capacitance ––– 1660 ––– VDS = 25V
Reverse Transfer Capacitance ––– 200 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6250 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 1470 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
170
680
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 100A, VGS = 0V
Reverse Recovery Time ––– 73 110 ns TJ = 25°C, IF = 100A
Reverse RecoveryCharge ––– 200 300 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.13mH, VGS = 10V
J
= 100A. (See Figure 12)
AS
≤ V
DD
(BR)DSS
as C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
,
At the point of termination of the leads at the PCB, the temp.
oss
while V
is rising from 0 to 80% V
DS
DSS
should be limited to 175°C. The device case temperature is
allowed to be higher
G
G
D
S
D
S
IRF1704
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
T = 200 C
J
°
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 200 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
2.0
170A
I =
D
1.5
100
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
V = 15V
DS
10
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100120140160180200220
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRF1704
)
12000
10000
8000
6000
4000
C, Capacitance (pF)
2000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
+ C
C
C
C
iss
oss
rss
C SHORTED
C
C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I =
100A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 60 120 180 240 300
Q , Total Gate Charge (nC)
G
V = 32V
DS
V = 20V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on
13
°
T = 200 C
J
100
°
T = 25 C
J
10
SD
I , Reverse Drain Current (A)
V = 0 V
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
1000
100
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 200 C
Single Pulse
10
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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IRF1704
200
LIMITED BY PACKAGE
150
100
D
I , Drain Current (A)
50
0
25 50 75 100 125 150 175 200
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
90%
10%
V
GS
V
GS
G
V
GS
t
d(on)tr
R
D.U.T.
D
t
d(off)tf
+
V
DD
-
V
DS
D = 0.50
thJC
0.20
0.1
0.10
P
0.05
Thermal Response (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1704
A
15V
DRIVER
+
-
V
DD
R
20V
V
DS
G
V
GS
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
1600
TOP
1200
800
400
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175 200
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
40A
77A
100A
°
Current Regulator
Same Type as D.U.T.
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
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IRF1704
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
+
-
.
.
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
.
R
G
V
GS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
G
D =
P.W.
Period
+
V
DD
-
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
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IRF1704
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A
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415
2.87 (.113
2.62 (.103
15.24 (.600
14.84 (.584
14.09 (.555
13.47 (.530
10.29 (.405
1 2 3
6.47
6.10 (.240
4
1.15 (.045
M IN
4.06 (.160
3.55 (.140
3.78 (.149
3.54 (.139
.255
- A -
4.69 (.185
4.20 (.165
- B -
1.32 (.052
1.22 (.048
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RC E
4 - DRA IN
1.40 (.055
3X
1.15 (.045
2.54 (.100
NOTES:
1 DIM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4. 5 M , 1 9 82 . 3 OU T L IN E C O N F O R M S T O J E D E C OU T L IN E T O - 2 2 0 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W ITH A SS EM BLY
LOT CO DE 9B 1M
This product has been designed and qualified for the Automotive [Q101]market.
0.93 (.037
3X
0.69 (.027
0.36 (.014) M B A M
INTERN ATIONAL
RE CTIFIER
L OGO
ASSEMBLY
LOT CODE
Data and specifications subject to change without notice.
0.55 (.022
3X
0.46 (.018
2.92 (.115
2.64 (.104
PART NUM BER
IRF1010
9246
9B 1M
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/02
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