• Floating channel designed for bootstrap operation
Fully operational to +600V or+1200V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10V/12V to 20V DC and
up to 25V for transient
• Undervoltage lockout for all channels
• Over-current shut down turns off all six drivers
• Independent 3 half-bridge drivers
• Matched propagation delay for all channels
• 2.5V logic compatible
• Outputs out of phase with inputs
Description
The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high
speed power MOSFET and IGBT driver with three independent
high side and low side referenced output channels for 3-phase
applications. Proprietary HVIC technology enables ruggedized
monolithic construction. Logic inputs are compatible with CMOS
or LSTTL outputs, down to 2.5V logic. An independent operational amplifier provides an analog feedback of bridge current
via an external current sense resistor. A current trip function
which terminates all six outputs can also be derived from this
resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to
indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR
lead. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive Nchannel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.
Product Summary
V
V
t
OFFSET
I
OUT
on/off
600V or 1200V max.
+/-
O
200 mA / 420 mA
10 - 20V or 12 - 20V
(typ.)750/700 ns
Deadtime (typ.)250 ns
Packages
28-Lead SOIC
44-Lead PLCC w/o 12 leads
28-Lead PDIP
)
)
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com1
up to 600V or 1200V
IR2133/IR2135/IR2233/IR2235 (J&S
)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation
ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B1,2,3
High side floating supply voltage (IR2133/IR2135) -0.3 625
(IR2233/IR2235) -0.3 1225
V
V
V
V
V
V
S1,2,3
HO1,2,3
CC
SS
LO1,2,3
IN
High side floating supply offset voltageV
High side floating output voltageV
Fixed supply voltage -0.3 25
Logic ground VCC - 25 VCC + 0.3
Low side output voltage -0.3 VCC + 0.3
Logic input voltage (HIN, LIN, ITRIP, SD & FLT-CLR) VSS - 0.3 (VSS + 15) or
B1,2,3
S1,2,3
- 25V
- 0.3V
(V
B1,2,3
B1,2,3
CC
+ 0.3
+ 0.3
V
+ 0.3)
whichever is
lower
V
IN,AMP
V
OUT,AMP
V
FLT
dV
P
D
Op amp input voltage (CA+ & CA-) VSS - 0.3 VCC + 0.3
Op amp output voltage (CAO) VSS - 0.3 VCC + 0.3
output voltage
FAULT
/dtAllowable offset supply voltage transient — 50
S
- 0.3 VCC + 0.3
V
SS
Package power dissipation @ TA ≤ 25ºC (28 Lead PDIP) — 1.5
(28 Lead SOIC) — 1.6
V/ns
W
(44 lead PLCC) — 2.0
Rth
(28 Lead SOIC) — 78
Thermal resistance, junction to ambient (28 Lead PDIP) — 83
JA
ºC/W
(44 lead PLCC) — 63
T
J
T
S
T
L
Junction temperature — 125
Storage temperature -55 150
Lead temperature (soldering, 10 seconds — 300
ºC
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to COM. The V
tested with all supplies biased at 15V differential.
Symbol Parameter DefinitionMin.Max.Units
V
V
B1,2,3
S1,2,3
High side floating supply voltage V
S1,2,3
+ 10/12 V
S1,2,3
High side floating supply offset voltage (IR2133/IR2135) Note 1 600
(IR2233/IR2235) Note 1 1200
V
HO1,2,3
V
CC
V
SS
V
LO1,2,3
V
IN
V
IN,AMP
V
OUT,AMP
V
FLT
Note 1: Logic operational for VS of COM - 5V to COM + 600V/1200V. Logic state held for VS of COM -5V to COM -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: All input pins, op amp input and output pins are internally clamped with a 5.2V zener diode.
High side floating output voltage V
S1,2,3
V
B1,2,3
Fixed supply voltage 10 or 12 20
Low side driver return -5 5
Low side output voltage 0 V
Logic input voltage (HIN, LIN, ITRIP, SD & FLT-CLR) V
Op amp input voltage (CA+ & CA-) V
Op amp output voltage (CAO) V
output voltage
FAULT
V
SS
SS
SS
SS
VSS + 5
VSS + 5
VSS + 5
V
CC
CC
+ 20
offset rating is
S
V
2www.irf.com
Dynamic Electrical Characteristics
V
V
BIAS
V
(
,
CC
BS1,2,3
= 15V,V
)
S1,2,3
= V
SS
,
IR2133/IR2135/IR2233/IR2235 (J&S
TA = 25oC and C
= 1000 pFunless otherwise specified.
L
)
Symbol
t
on
t
off
t
r
t
f
t
sd
t
itrip
t
bl
t
flt
t
fil,in
t
fltclr
DefinitionMin. Typ. Max. Units Test Conditions
Turn-on propagation delay500 7501000
Turn-off propagation delay450 700 950
Turn-on rise time — 90 150
Turn-off fall time — 40 70
SD to output shutdown propagation delay500 7501000V
ITRIP to output shutdown propagation delay600 8501100V
ns
IN,VITRIP
ITRIP blanking time — 400 —ITRIP = 1V
ITRIP to FAULT propagation delay400 650 900V
Input filter time (HIN, LIN and SD) — 310 —V
FLT-CLR to FAULT clear time600 8501100V
IN,VITRIP
IN
IN,VITRIP
DTDeadtime, LS turn-off to HS turn-on &100 250 400VIN = 0 & 5V
HS turn-off to LS turn-on
SR+Amplifier slew rate (positive) 5 10 —
SR-Amplifier slew rate (negative) 2 2.5 —
NOTE: For high side PWM, HIN pulse width must be ≥ 1µ sec
Amplifier Output Source Current 4 7 —CA+ = 1V, CA- = 0V, CAO = 4V
Amplifier Output Sink Current 0.5 1 —CA+ = 0V, CA- = 1V, CAO = 2V
Amplifier Output High Short Circuit Current — 10 —CA+ = 5V, CA- = 0V, CAO = 0V
mA
Amplifier Output Low Short Circuit Current — 4 —CA+ = 0V, CA- = 5V, CAO = 5V
4www.irf.com
Functional Block Diagram
IR2133/IR2135/IR2233/IR2235 (J&S
)
Lead Definitions
SymbolLead Description
HIN1,2,3Logic inputs for high side gate driver outputs (HO1,2,3), out of phase.
LIN1,2,3Logic inputs for low side gate driver outputs (LO1,2,3), out of phase.
FAULTIndicates over-current or undervoltage lockout (low side) has occurred, negative logic.
V
CC
ITRIPInput for over-current shut down.
FLT-CLRLogic input for fault clear, negative logic.
SDLogic input for shut down.
CAOOutput of current amplifier.
CA-Negative input of current amplifier.
CA+Positive input of current amplifier.
V
SS
COMLow side return.
V
B1,2,3
HO1,2,3High side gate drive outputs.
V
S1,2,3
LO1,2,3Low side gate drive outputs
www.irf.com5
Logic and low side fixed supply.
Logic ground.
High side floating supplies.
High side floating supply returns.
IR2133/IR2135/IR2233/IR2235 (J&S
SD
ITRIP
HIN
LIN1,2,3
HO1,2,3
LO
1,2,3
FLT-CLR
FAULT
rtontftoff
LO
50%
50%
90%
90%
10%
10%
Lead Assignments
)
ITRIP
FLT-CLR
CAO
CACA+
SD
VSS
COM
LO3
LO2
LO1
VS3
HO3
VB3
FAULT
LIN3
LIN2
LIN1
HIN3
HIN2
HIN1
VCC
VB1
HO1
VS1
VB2
HO2
VS2
ITRIP
FLT-CLR
CAO
CACA+
SD
VSS
COM
LO3
LO2
LO1
VS3
HO3
VB3
FAULT
LIN3
LIN2
LIN1
HIN3
HIN2
HIN1
VCC
VB1
HO1
VS1
VB2
HO2
VS2
28 Lead DIP 44 Lead PLCC w/o 12 Leads 28 Lead SOIC (Wide Body)
IR2133
IR2135
IR2233
IR2235
IR2133J
IR2135J
IR2233J
IR2235J
IR2133S
IR2135S
IR2233S
IR2235S
Part Number
HIN
LIN
t
HO
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
6www.irf.com
IR2133/IR2135/IR2233/IR2235 (J&S
FLT-CLR
Any Output
ITRIP
FAULT
HIN
DT
50%
50%
LIN
DT
LO
50%
90%
320V
320V
160V
50%
50%
)
Figure 3. Deadtime Waveform Definitions
SD
t
sd
HO
LO
Figure 5. Shutdown Waveform Definitions
120
110
100
90
80
70
60
50
40
30
Juntion Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 7. IR2133J Junction Temperature vs
Frequency Driving (IRGPC20KD2) Rgate = 5.1Ω @
Vcc = 15V
480V
0V
50%
50%
t
flt
t
itrip
50%
t
fltclr
Figure 4. Overcurrent Shutdown Waveform
120
110
100
90
80
70
60
50
40
30
Juntion Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 8. IR2133J Junction Temperature vs
Frequency Driving (IRGPC30KD2) Rgate = 5.1Ω @
Vcc = 15V
480
160
0V
www.irf.com7
IR2133/IR2135/IR2233/IR2235 (J&S
160V
320V
160V
900V
500
300V
900V
300
100
110
120
)
120
110
100
90
80
70
60
50
40
30
Junction Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 9. IR2133J Junction Temperature vs
Frequency Driving (IRGPC40KD2) Rgate = 5.1Ω @
Vcc = 15V
480V
0V
150
140
130
120
110
100
90
80
70
60
50
40
30
Junction Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 10. IR2133J Junction Temperature vs
Frequency Driving (IRGPC50KD2) Rgate = 5.1Ω @
Vcc = 15V
480V
320V
0V
120
110
100
90
80
70
60
50
40
30
Junction Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 11. IR2233J Junction Temperature vs
Frequency Driving (IRG4PH30KD) Rgate = 20Ω @
Vcc = 15V
8www.irf.com
0V
120
110
100
90
80
70
60
50
40
30
Junction Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 12. IR2233J Junction Temperature vs
Frequency Driving (IRG4PH40KD) Rgate = 15Ω @
Vcc = 15V
500V
0V
IR2133/IR2135/IR2233/IR2235 (J&S
500V
300V
100
110
120
500V
300V
)
120
110
100
90
80
70
60
50
40
30
Junction Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 13. IR2233J Junction Temperature vs
Frequency Driving (IRG4PH50KD) Rgate = 10Ω @
Vcc = 15V
Package Dimensions
900V
0V
120
900V
110
100
90
80
70
60
50
40
30
Junction Temperature (°C)
20
1E+21E+31E+41E+5
Frequency (Hz)
Figure 14. IR2133J Junction Temperature vs
Frequency Driving (IRG4ZH71KD) Rgate = 5Ω @
Vcc = 15V
0V
28-Lead PDIP (wide body)
www.irf.com9
01-3024 02
01-6011
(MS-011AB)
IR2133/IR2135/IR2233/IR2235 (J&S
)
NOTES
28-Lead SOIC (wide body)
01-3040 02
01-6013
(MS-013AE)
44-Lead PLCC w/o 12 leads
01-3004 02(mod.
01-6009 00
) (MS-018AC)
1/28/2002
10www.irf.com
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