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Data Sheet No. PD60107-Q
IR2133/IR2135 (J&S
IR2233/IR2235 (J&S
3-PHASE BRIDGE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V or+1200V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10V/12V to 20V DC and
up to 25V for transient
• Undervoltage lockout for all channels
• Over-current shut down turns off all six drivers
• Independent 3 half-bridge drivers
• Matched propagation delay for all channels
• 2.5V logic compatible
• Outputs out of phase with inputs
Description
The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high
speed power MOSFET and IGBT driver with three independent
high side and low side referenced output channels for 3-phase
applications. Proprietary HVIC technology enables ruggedized
monolithic construction. Logic inputs are compatible with CMOS
or LSTTL outputs, down to 2.5V logic. An independent operational amplifier provides an analog feedback of bridge current
via an external current sense resistor. A current trip function
which terminates all six outputs can also be derived from this
resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to
indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR
lead. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive Nchannel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.
Product Summary
V
V
t
OFFSET
I
OUT
on/off
600V or 1200V max.
+/-
O
200 mA / 420 mA
10 - 20V or 12 - 20V
(typ.) 750/700 ns
Deadtime (typ.) 250 ns
Packages
28-Lead SOIC
44-Lead PLCC w/o 12 leads
28-Lead PDIP
)
)
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
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up to 600V or 1200V
IR2133/IR2135/IR2233/IR2235 (J&S
)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation
ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B1,2,3
High side floating supply voltage (IR2133/IR2135) -0.3 625
(IR2233/IR2235) -0.3 1225
V
V
V
V
V
V
S1,2,3
HO1,2,3
CC
SS
LO1,2,3
IN
High side floating supply offset voltage V
High side floating output voltage V
Fixed supply voltage -0.3 25
Logic ground VCC - 25 VCC + 0.3
Low side output voltage -0.3 VCC + 0.3
Logic input voltage (HIN, LIN, ITRIP, SD & FLT-CLR) VSS - 0.3 (VSS + 15) or
B1,2,3
S1,2,3
- 25 V
- 0.3 V
(V
B1,2,3
B1,2,3
CC
+ 0.3
+ 0.3
V
+ 0.3)
whichever is
lower
V
IN,AMP
V
OUT,AMP
V
FLT
dV
P
D
Op amp input voltage (CA+ & CA-) VSS - 0.3 VCC + 0.3
Op amp output voltage (CAO) VSS - 0.3 VCC + 0.3
output voltage
FAULT
/dt Allowable offset supply voltage transient — 50
S
- 0.3 VCC + 0.3
V
SS
Package power dissipation @ TA ≤ 25ºC (28 Lead PDIP) — 1.5
(28 Lead SOIC) — 1.6
V/ns
W
(44 lead PLCC) — 2.0
Rth
(28 Lead SOIC) — 78
Thermal resistance, junction to ambient (28 Lead PDIP) — 83
JA
ºC/W
(44 lead PLCC) — 63
T
J
T
S
T
L
Junction temperature — 125
Storage temperature -55 150
Lead temperature (soldering, 10 seconds — 300
ºC
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to COM. The V
tested with all supplies biased at 15V differential.
Symbol Parameter Definition Min. Max. Units
V
V
B1,2,3
S1,2,3
High side floating supply voltage V
S1,2,3
+ 10/12 V
S1,2,3
High side floating supply offset voltage (IR2133/IR2135) Note 1 600
(IR2233/IR2235) Note 1 1200
V
HO1,2,3
V
CC
V
SS
V
LO1,2,3
V
IN
V
IN,AMP
V
OUT,AMP
V
FLT
Note 1: Logic operational for VS of COM - 5V to COM + 600V/1200V. Logic state held for VS of COM -5V to COM -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: All input pins, op amp input and output pins are internally clamped with a 5.2V zener diode.
High side floating output voltage V
S1,2,3
V
B1,2,3
Fixed supply voltage 10 or 12 20
Low side driver return -5 5
Low side output voltage 0 V
Logic input voltage (HIN, LIN, ITRIP, SD & FLT-CLR) V
Op amp input voltage (CA+ & CA-) V
Op amp output voltage (CAO) V
output voltage
FAULT
V
SS
SS
SS
SS
VSS + 5
VSS + 5
VSS + 5
V
CC
CC
+ 20
offset rating is
S
V
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Dynamic Electrical Characteristics
V
V
BIAS
V
(
,
CC
BS1,2,3
= 15V, V
)
S1,2,3
= V
SS
,
IR2133/IR2135/IR2233/IR2235 (J&S
TA = 25oC and C
= 1000 pF unless otherwise specified.
L
)
Symbol
t
on
t
off
t
r
t
f
t
sd
t
itrip
t
bl
t
flt
t
fil,in
t
fltclr
Definition Min. Typ. Max. Units Test Conditions
Turn-on propagation delay 500 750 1000
Turn-off propagation delay 450 700 950
Turn-on rise time — 90 150
Turn-off fall time — 40 70
SD to output shutdown propagation delay 500 750 1000 V
ITRIP to output shutdown propagation delay 600 850 1100 V
ns
IN,VITRIP
ITRIP blanking time — 400 — ITRIP = 1V
ITRIP to FAULT propagation delay 400 650 900 V
Input filter time (HIN, LIN and SD) — 310 — V
FLT-CLR to FAULT clear time 600 850 1100 V
IN,VITRIP
IN
IN,VITRIP
DT Deadtime, LS turn-off to HS turn-on & 100 250 400 VIN = 0 & 5V
HS turn-off to LS turn-on
SR+ Amplifier slew rate (positive) 5 10 —
SR- Amplifier slew rate (negative) 2 2.5 —
NOTE: For high side PWM, HIN pulse width must be ≥ 1µ sec
V/µs
Static Electrical Characteristics
V
(V
V
CC
,
BIAS
referenced to V
referenced to V
Symbol
V
IH
V
IL
V
FCLR,IH
V
FCLR,IL
V
SD,TH
V
SD,TH
V
IT,TH
V
IT,TH
V
OH
V
OL
I
LK
Definition Min. Typ. Max. Units Test Conditions
Logic “0” Input Voltage (OUT = LO) 2.2 — —
Logic “1” Input Voltage (OUT = HI) — — 0.8
Logic “0” Fault Clear Input Voltage 2.2 — —
Logic “1” Fault Clear Input Voltage — — 0.8
SD Input Positive Going Threshold 1.2 1.65 2.1
+
SD Input Negative Going Threshold 0.9 1.35 1.8
-
I
+
ITRIP
I
-
ITRIP
High Level Output Voltage, V
Low Level Output Voltage, V
Offset Supply Leakage Current (IR2133/IR2135) — — 50 V
(IR2233/IR2235) — — 50 V
I
QBS
I
QCC
I
IN
I
IN
I
SD
I
SD
I
ITRIP
I
ITRIP
+
+
-
Quiescent VBS Supply Current — 50 100 VIN = 0V or 5V
Quiescent VCC Supply Current — 4 8 mA VIN = 0V or 5V
Logic “1” Input Bias Current (OUT = HI) — 200 350 VIN = 0V
Logic “0” Input Bias Current (OUT = LO) — 100 250 VIN = 5V
“High” Shutdown Bias Current — 30 100 SD = 5V
“Low” Shutdown Bias Current — — 100 nA SD = 0V
“High” I
+
“Low” I
-
) = 15V unless otherwise specified and TA = 25oC. The V
BS1,2,3
and are applicable to all six channels (H
SS
SS
and V
and are applicable to the respective output leads: H
S1,2,3
S1,2,3
& L
Input Positive Going Threshold 420 520 620
Input Negative Going Threshold 340 440 540
- V
BIAS
O
O
Bias Current — 30 100 µA I
ITRIP
Bias Current — — 100 nA I
ITRIP
— — 100 VIN = 0V, IO = 0A
— — 100 VIN = 5V, IO = 0A
V
and IIN parameters are
,
IN
). The VO and IO parameters are
S1,2,3
TH
O1,2,3
or L
V
mV
µA
B1,2,3=VS1,2,3
B1,2,3=VS1,2,3
µA
ITRIP
ITRIP
VIN = 0 & 5V
= 0 to 600V
V
S1,2,3
or 1200V
IN,VSD
= 0 & 5V
= 0 & 5V
= 0 & 5V
= 0 & 5V
O1,2,3.
= 5V
= 0V
= 0 & 5V
= 600V
= 1200V
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