• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for all channels
• Over-current shutdown turns off all six drivers
• Independent 3 high side & 3 low side drivers
• Matched propagation delay for all channels
• 2.5V logic compatible
• Outputs out of phase with inputs
Description
The IR2131(J)(S) is a high voltage, high speed power
MOSFET and IGBT driver with three independent high
and low side referenced output channels. Proprietary
HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or
LSTTL outputs, down to 2.5V logic. A current trip function which terminates all six outputs can be derived from
an external current sense resistor. A shutdown input is
provided for a customized shutdown function. An open
drain
the shutdowns has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.
The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration
which operate up to 600 volts.
signal is provided to indicate that any of
Product Summary
V
OFFSET
I
+/-160 mA / 360 mA
O
V
OUT
t
(typ.)1.3 & 0.6 µs
on/off
Deadtime (typ.)700 ns
600V max.
10 - 20V
Packages
28-Lead
SOIC
44-Lead PLCC
w/o 12 Leads
28-Lead PDIP
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com1
IR2131
HIN1,2,3
LIN1,2,3
FLT-CLR
FAULT
HIN1,2,3
LIN1,2,3
FLT-CLR
FAULT
(J)(S)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under
board mounted and still air conditions. Additional Information is shown in Figures 7 through 10.
ParameterValue
SymbolDefinitionMin.Max.Units
V
B1,2,3
V
S1,2,3
V
HO1,2,3
V
CC
V
SS
V
LO1,2,3
V
IN
V
FLT
dVS/dtAllowable Offset Supply Voltage Transient—50V/ns
P
D
Rth
JA
T
J
T
S
T
L
High Side Floating Supply Voltage-0.3625
High Side Floating Offset VoltageV
High Side Floating Output VoltageV
B1,2,3
S1,2,3
- 25V
- 0.3V
B1,2,3
B1,2,3
+ 0.3
+ 0.3
Low Side and Logic Fixed Supply Voltage-0.325
Logic GroundVCC - 25V
Low Side Output Voltage-0.3V
Logic Input Voltage (
,
,
,SD&ITRIP)VSS - 0.3V
Output VoltageVSS - 0.3V
CC
CC
SS
CC
+ 0.3+ 0.3+ 15+ 0.3
Package Power Dissipation @ TA ≤ +25°C(28 Lead DIP)—1.5
(28 Lead SOIC)—1.6W
(44 Lead PLCC)—2.0
Thermal Resistance, Junction to Ambient(28 Lead DIP)—83
(28 Lead SOIC)—78°C/W
(44 Lead PLCC)—63
Junction Temperature—150
Storage Temperature-55150°C
Lead Temperature (Soldering, 10 seconds)—300
V
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to COM. The V
tested with all supplies biased at 15V differential.
ParameterValue
SymbolDefinitionMin.Max.Units
V
B1,2,3
V
S1,2,3
V
HO1,2,3
V
CC
V
SS
V
LO1,2,3
V
IN
V
FLT
T
A
Note 1: Logic operational for VS of -5V to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: All input pins, CA- and CAO pins are internally clamped with a 5.2V zener diode.
2www.irf.com
High Side Floating Supply VoltageV
S1,2,3
+ 10V
High Side Floating Offset VoltageNote 1600
High Side Floating Output VoltageV
S1,2,3
Low Side and Logic Fixed Supply Voltage1020
Logic Ground-55
Low Side Output Voltage0V
Logic Input Voltage (
Output VoltageV
,
,
,SD&ITRIP)V
SS
SS
Ambient Temperature-40125°C
offset rating is
S
+ 20
S1,2,3
V
B1,2,3
CC
VSS + 5
V
CC
V
IR2131
FLT-CLR
FLT-CLR
FAULT
FLT-CLR
FAULT
HIN1,2,3
LIN1,2,3
(J)(S)
Dynamic Electrical Characteristics
V
BIAS
(VCC, V
BS1,2,3
) = 15V, V
= VSS = COM, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic
S1,2,3
electrical characteristics are defined in Figures 4 through 5.
ParameterValue
SymbolDefinitionMin.Typ. Max. Units Test Conditions
t
on
t
off
t
t
itrip
t
t
t
flt,in
t
fltclr
t
sd
DTDeadtime4007001200V
NOTE: For high side PWM, HIN pulse width must be ≥ 1.5µsec
Output High Short Circuit Pulsed Current160250—VO = 0V, V
Output Low Short Circuit Pulsed Current360500—VO = 15V, V
V
mA
PW ≤ 10 µs
PW ≤ 10 µs
IN
IN
= 0V
= 5V
Functional Block Diagram
4www.irf.com
Lead Definitions
HIN1,2,3
FAULT
FLT-CLR
LIN1,2,3
Lead
SymbolDescription
Logic inputs for high side gate driver outputs (HO1,2,3), out of phase
Logic inputs for low side gate driver output (LO1,2,3), out of phase
Logic input for fault clear
SDLogic input for shutdown
Indicates over-current or undervoltage lockout (low side) has occurred, negative logic
V
CC
ITRIPInput for over-current shutdown
V
SS
V
B1,2,3
HO1,2,3High side gate drive outputs
V
S1,2,3
LO1,2,3Low side gate drive outputs
COMLow side return
Low side and logic fixed supply
Logic ground
High side floating supplies
High side floating supply returns
IR2131
(J)(S)
Lead Assignments
28 Lead DIP44 Lead PLCC w/o 12 Leads28 Lead SOIC (Wide Body)
IR2131IR2131JIR2131S
Part Number
www.irf.com5
IR2131
HIN1,2,3
LIN1,2,3
FLT-CLR
FAULT
LIN1,2,3
HIN1,2,3
FAULT
FLT-CLR
LIN1,2,3
HIN1,2,3
LIN1,2,3
ITRIP
SD
LO1,2,3
HO1,2,3
Figure 1. Input/Output Timing DiagramFigure 2. Floating Supply Voltage Transient Test Circuit