Datasheet IR2131JS Datasheet (International Rrectifier)

FAULT
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Preliminary Data Sheet No. PD60032-N
IR2131
(J)(S)
3 HIGH SIDE AND 3 LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Matched propagation delay for all channels
2.5V logic compatible
Outputs out of phase with inputs
Description
The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic con­struction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A current trip func­tion which terminates all six outputs can be derived from an external current sense resistor. A shutdown input is provided for a customized shutdown function. An open drain the shutdowns has occurred. The output drivers fea­ture a high pulse current buffer stage designed for mini­mum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.
signal is provided to indicate that any of
Product Summary
V
OFFSET
I
+/- 160 mA / 360 mA
O
V
OUT
t
(typ.) 1.3 & 0.6 µs
on/off
Deadtime (typ.) 700 ns
600V max.
10 - 20V
Packages
28-Lead
SOIC
44-Lead PLCC
w/o 12 Leads
28-Lead PDIP
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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IR2131
HIN1,2,3
LIN1,2,3
FLT-CLR
FAULT
HIN1,2,3
LIN1,2,3
FLT-CLR
FAULT
(J)(S)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional Information is shown in Figures 7 through 10.
Parameter Value
Symbol Definition Min. Max. Units
V
B1,2,3
V
S1,2,3
V
HO1,2,3
V
CC
V
SS
V
LO1,2,3
V
IN
V
FLT
dVS/dt Allowable Offset Supply Voltage Transient 50 V/ns
P
D
Rth
JA
T
J
T
S
T
L
High Side Floating Supply Voltage -0.3 625 High Side Floating Offset Voltage V High Side Floating Output Voltage V
B1,2,3
S1,2,3
- 25 V
- 0.3 V
B1,2,3 B1,2,3
+ 0.3
+ 0.3
Low Side and Logic Fixed Supply Voltage -0.3 25 Logic Ground VCC - 25 V Low Side Output Voltage -0.3 V Logic Input Voltage (
,
,
, SD & ITRIP) VSS - 0.3 V
Output Voltage VSS - 0.3 V
CC CC
SS
CC
+ 0.3 + 0.3 + 15 + 0.3
Package Power Dissipation @ TA +25°C (28 Lead DIP) 1.5
(28 Lead SOIC) 1.6 W
(44 Lead PLCC) 2.0
Thermal Resistance, Junction to Ambient (28 Lead DIP) 83
(28 Lead SOIC) 78 °C/W
(44 Lead PLCC) 63 Junction Temperature 150 Storage Temperature -55 150 °C Lead Temperature (Soldering, 10 seconds) 300
V
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM. The V tested with all supplies biased at 15V differential.
Parameter Value
Symbol Definition Min. Max. Units
V
B1,2,3
V
S1,2,3
V
HO1,2,3
V
CC
V
SS
V
LO1,2,3
V
IN
V
FLT
T
A
Note 1: Logic operational for VS of -5V to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). Note 2: All input pins, CA- and CAO pins are internally clamped with a 5.2V zener diode.
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High Side Floating Supply Voltage V
S1,2,3
+ 10 V High Side Floating Offset Voltage Note 1 600 High Side Floating Output Voltage V
S1,2,3
Low Side and Logic Fixed Supply Voltage 10 20 Logic Ground -5 5 Low Side Output Voltage 0 V Logic Input Voltage (
Output Voltage V
,
,
, SD & ITRIP) V
SS SS
Ambient Temperature -40 125 °C
offset rating is
S
+ 20
S1,2,3
V
B1,2,3
CC
VSS + 5
V
CC
V
IR2131
FLT-CLR
FLT-CLR
FAULT
FLT-CLR
FAULT
HIN1,2,3
LIN1,2,3
(J)(S)
Dynamic Electrical Characteristics
V
BIAS
(VCC, V
BS1,2,3
) = 15V, V
= VSS = COM, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic
S1,2,3
electrical characteristics are defined in Figures 4 through 5.
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
t
off
t
t
itrip
t t
t
flt,in
t
fltclr
t
sd
DT Deadtime 400 700 1200 V
NOTE: For high side PWM, HIN pulse width must be ≥ 1.5µsec
Turn-On Propagation Delay 0.6 1.3 2.0 Turn-Off Propagation Delay 0.2 0.6 1.0 V Turn-On Rise Time 80 150 V
r
t
Turn-Off Fall Time 40 100
f
ITRIP to Output Shutdown Propagation Delay 400 700 1000 VIN, V ITRIP Blanking Time 400 V
bl
ITRIP to
flt
Indication Delay 400 700 1000 ns V
Input Filter Time (All Six Inputs) 310 V
to
Clear Time 400 800 1200 V
SD to Output Shutdown Propagation Delay 400 700 1000 VIN, V
µs
S1,2,3
, V
IN
, VIT, V
IN
= 0 & 5V
IN
= 0 to 600V
= 0 & 5V
ITRIP
= 1V
ITRIP
= 0 & 5V
ITRIP
= 0 & 5V
IN
= 0&5V
FC
= 0 & 5V
SD
= 0 & 5V
IN
Static Electrical Characteristics
V
(VCC, V
BIAS
parameters are referenced to VSS and are applicable to all six logic input leads: parameters are referenced to COM and V
BS1,2,3
) = 15V, V
= VSS = COM and TA = 25°C unless otherwise specified. The VIN, VTH and I
S1,2,3
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
S1,2,3
&
. The VVO and I
IN
O
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
V V
V
FCLR,IH
V
FCLR,IL
V
SD,TH+
V
SD,TH-
V
IT,TH+
V
IT,TH-
V
OH
V
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
ITRIP+
I
ITRIP-
I
FCLR+
I
FCLR-
I
SD+
I
SD-
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OL
Logic “0” Input Voltage (OUT = LO) 2.2
IH
Logic “1” Input Voltage (OUT = HI) 0.8
IL
Logic “0” Fault Clear Input Voltage 2.2 — Logic “1” Fault Clear Input Voltage 0.8
V
Shutdown Input Positive Going Threshold 1.2 1.8 2.1 Shutdown Input Negative Going Threshold 0.9 1.5 1.8 ITRIP Input Positive Going Threshold 250 485 600 ITRIP Input Negative Going Threshold 200 400 550 High Level Output Voltage, V
- VO 100 VIN = 0V, IO = 0A
BIAS
mV
Low Level Output Voltage, VO 100 VIN = 5V, IO = 0A Offset Supply Leakage Current 50 VB = VS = 600V Quiescent VBS Supply Current 30 100 VIN = 0V or 5V
µA
Quiescent VCC Supply Current 3.0 4.5 mA VIN = 0V or 5V Logic “1” Input Bias Current (OUT = HI) 190 300 VIN = 0V Logic “0” Input Bias Current (OUT = LO) 50 100 µA VIN = 5V “High” ITRIP Bias Current 75 150 ITRIP = 5V “Low” ITRIP Bias Current 100 nA ITRIP = 0V Logic “1” Fault Clear Bias Current 125 250 Logic “0” Fault Clear Bias Current 75 150 µA Logic “1” Shutdown Bias Current 75 150 SD = 5V Logic “0” Shutdown Bias Current 100 nA SD = 0V
= 0V = 5V
IR2131
FAULT
HIN1,2,3
LIN1,2,3
(J)(S)
Static Electrical Characteristics -- Continued
V
(VCC, V
BIAS
parameters are referenced to VSS and are applicable to all six logic input leads: parameters are referenced to COM and V
BS1,2,3
) = 15V, V
= VSS = COM and TA = 25°C unless otherwise specified. The VIN, VTH and I
S1,2,3
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
S1,2,3
&
. The VVO and I
IN
O
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
R
on,FLT
I
I
O+
O-
VBS Supply Undervoltage Positive Going 8.2 8.7 9.2 Threshold VBS Supply Undervoltage Negative Going 7.8 8.3 8.8 Threshold VCC Supply Undervoltage Positive Going 8.2 8.7 9.2 Threshold VCC Supply Undervoltage Negative Going 7.8 8.3 8.8 Threshold
Low On-Resistance 55 75
Output High Short Circuit Pulsed Current 160 250 VO = 0V, V
Output Low Short Circuit Pulsed Current 360 500 VO = 15V, V
V
mA
PW10 µs
PW10 µs
IN
IN
= 0V
= 5V
Functional Block Diagram
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Lead Definitions
HIN1,2,3
FAULT
FLT-CLR
LIN1,2,3
Lead
Symbol Description
Logic inputs for high side gate driver outputs (HO1,2,3), out of phase Logic inputs for low side gate driver output (LO1,2,3), out of phase Logic input for fault clear
SD Logic input for shutdown
Indicates over-current or undervoltage lockout (low side) has occurred, negative logic
V
CC
ITRIP Input for over-current shutdown V
SS
V
B1,2,3
HO1,2,3 High side gate drive outputs V
S1,2,3
LO1,2,3 Low side gate drive outputs
COM Low side return
Low side and logic fixed supply
Logic ground High side floating supplies
High side floating supply returns
IR2131
(J)(S)
Lead Assignments
28 Lead DIP 44 Lead PLCC w/o 12 Leads 28 Lead SOIC (Wide Body)
IR2131 IR2131J IR2131S
Part Number
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IR2131
HIN1,2,3
LIN1,2,3
FLT-CLR
FAULT
LIN1,2,3
HIN1,2,3
FAULT
FLT-CLR
LIN1,2,3
HIN1,2,3
LIN1,2,3
ITRIP
SD
LO1,2,3
HO1,2,3
Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit
(J)(S)
<50V/ns
50% 50%
LO1,2,3
HO1,2,3
Figure 3. Switching Time Test Circuit
50% 50%
50% 50%
DT DT
HO1,2,3 LO1,2,3
t
t
r
on
90% 90%
10% 10%
t
off
Figure 4. Switching Time Waveform Definitions
ITRIP
50%
SD
50%
50%
t
fltclr
LO1,2,3
50%
50%
t
flt
t
itrip
Figure 6. Shutdown Waveform DefinitionsFigure 5. Deadtime Waveform Definitions
t
f
50%
50%
t
sd
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IR2131
0V
(J)(S)
50
45
40
35
30
Junction Temperature (°C)
25
20
1E+2 1E+3 1E+4 1E+5
Frequency (Hz)
Figure 7. IR2131 TJ vs. Frequency (IRF820)
= 33, VCC = 15V
R
GATE
100
80
60
Junction Temperature (°C)
40
20
1E+2 1E+3 1E+4 1E+5
Figure 9. IR2131 T
R
Frequency (Hz)
vs. Frequency (IRF840)
J
= 15, VCC = 15V
GATE
480V
320V
160V
0V
480V
320V
160V
0V
50
45
40
35
30
Junction Temperature (°C)
25
20
1E+2 1E+3 1E+4 1E+5
Figure 8. IR2131 T
R
140
120
100
80
60
Junction Temperature (°C)
40
20
1E+2 1E+3 1E+4 1E+5
Figure 10. IR2131 T
R
Frequency (Hz)
vs. Frequency (IRF830)
J
= 20, VCC = 15V
GATE
Frequency (Hz)
vs. Frequency (IRF450)
J
= 10, VCC = 15V
GATE
480V
320V
160V
480V
320V
160V
0V
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IR2131
(J)(S)
Case outlines
28-Lead PDIP (wide body)
28-Lead SOIC (wide body)
01-3024 02
01-3040 02
01-6011
(MS-011AB)
01-6013
(MS-013AE)
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NOTES
IR2131
(J)(S)
44-Lead PLCC w/o 12 leads
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 1/24/2002
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01-3004 02(mod.
01-6009 00
) (MS-018AC)
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