International Rrectifier IR2125Z User Manual
查询IR2125Z供应商
PD - 60024C
IR2125Z
CURRENT LIMITING SINGLE CHANNEL DRIVER
Features
Product Summary
n Floating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 12 to 18V
n Undervoltage lockout
V
OFFSET
IO+/- 1A / 2A
V
OUT
VCSth 230 mv
t
(typ.) 150 & 150 ns
on/off
400V max.
12 - 18V
n Current detection and limiting loop to limit driven
power transistor current
n Error lead indicates fault conditions and pro
grams shutdown time
n Output in phase with input
Description
The IR2125Z is a high voltage, high speed power
MOSFET and IGBT driver with over-current limiting
protection circuitry . Proprietary GVIC and latch immune
CMOS technologies enable ruggedized minilithic
consturction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. the ouput driver features a high
pulse current buffer stage designed for minimum driver
cross-conduction.
The protection circuitry detects over-current in the driven
power transistor and limits the gate drive voltage. Cycle
by cycle shutdown is programmed by an external
capacitor which directly controls the time interval
between detection of the over-current limiting conditions
and latched shutdown. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high
or low side configuration which operates up to 400 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.
Symbol Parameter Min. Max. Units
V
B
V
S
V
HO
V
CC
V
ERR
V
CS
V
IN
dVs/dt Allowable Offset Supply Voltage Transient — 50 V/ns
P
D
R
qJA
T
J
T
S
T
L
High Side Floating Supply Voltage -0.3 VS + 20
High Side Floating Supply Offset Voltage -5 400
High Side Floating Output Voltage VS - 0.3 V
Logic Supply Voltage -0.3 20 V
Error Signal Voltage -0.3 VCC + 0.3
Current Sense Voltage VS - 0.3 V
Logic Input Voltage -0.3 VCC + 0.3
Package Power Dissipation @ TA £ +25°C — 1.0 W
Thermal Resistance, Junction to Ambient — 10 0 °C/W
Junction Temperature -55 125
Storage Temperature -55 150 °C
Lead Temperature (Soldering, 10 seconds) — 300
B
B
+ 0.3
+ 0.3
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5/16/01
IR2125Z
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The VS offset ratings are tested with all supplies biased at
15V differential.
Symbol Parameter Min. Max. Units
V
B
V
S
V
HO
V
CC
V
IN
V
ERR
V
CS
Dynamic Electrical Characteristics
V
(VCC, VBS) = 15V, and CL = 3300 PF and Ta = 25°C unless otherwise specified. The dynamic
BIAS
electrical characteristics are measured using the test circuit shown in Figure 3 through 6.
Symbol Parameter Min. T y p . Max. Min. Max. Units Test Conditions
t
on
t
off
t
r
t
f
t
cs
t
sd
t
err
High Side Floating Supply Absolute Voltage VS + 12 VS + 18
High Side Floating Supply Offset Voltage -5 400
High Side Floating Output Voltage V
Low Side Fixed Supply Voltage 12 18 V
Logic Input Voltage V
Error Signal Voltage V
Current Sense Signal Voltage V
S
SS
SS
S
V
B
V
CC
V
CC
V
B
Tj = 25°C Tj =
-55 to 125°C
Turn-On Propagation Delay — 150 200 — 270
Turn-Off Propagation Delay — 150 300 — 330
Turn-On Rise Time — 43 60 — 80 VS = 0V to 400V
Turn-Off Fall Time — 26 35 — 50 CL = 3300pf
CS to output shutdown propagation — 0. 7 1.2 — 1.4
delay
Shutdown Propagation Delay — 1.7 2.2 — 2. 5 µs
CS to ERR pull-up propagation time — 9 22 — 25 VS = 0V TO 400V
ns
C
= 270pf
err
T ypical Connection
up to 400V
V
CC
IN
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V
CC
IN
ERR
COM
V
OUT
CS
B
V
S
TO
LOAD
IR2125Z
Static Electrical Characteristics
V
(VCC, VBS) = 15V and Ta = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are
BIAS
referenced to COM . VO and IO parameters are referenced to V
Tj = 25°C Tj =
Symbol Parameter Min. T y p . Max. Min. Max. Units Test Conditions
I
LK
I
QBS
I
QCC
I
IN
I
IN
I
CS
I
CS
V
V
V
ERR
V
ERR
V
CSTH
V
CSTH
V
BSUV
V
BSUV
V
BSOV
V
BSOV
V
CCUV
V
CCUV
V
CCOV
V
CCOV
I
ERR
I
ERR
I
ERR
V
OH
V
Ron,ON Output High on Resistance — 9 ———
Ron,OFF Output Low on Resistance — 3 ———
Offset Supply Leakage Current ——50 — 250 VB = VS = 400V
Quiescent VBS Supply Current — 400 1000 — 1300 IN = CS = 0V, or 5V
Quiescent V
+
Logic “1” Input Bias Current — 425— 30 µA IN = 5V
-
Logic “0” Input Bias Current ——1.0 — 1.0 IN = 0V
+
“High” CS Bias Current — 615— 30 CS = 3V
-
“Low” CS Bias Current ——1.0 — 1.0 CS = 0V
Logic “1” Input Voltage ———3.0 —
IH
Logic “0” Input Voltage ————0.8 V
IL
+
Logic “1” ERR Input Voltage ———2.2 — V
-
Logic “0” ERR Input Voltage ————0.8
+
CS Input Positive Going Threshold 150 230 320 —— 10V < V
-
CS Input Positive Going Threshold 130 200 300 —— 10V < V
+
VBS Supply Overvoltage Positive 8.5 9.3 10 ——
Supply Current — 700 1200 — 1500 IN = CS = 0V, or 5V
CC
Going Threshold
-
VBS Supply Undervoltage Negative 7.7 8.5 9.0 ——
Going Threshold
+
VBS Supply Overvoltage Positive 19.8 21.5 23 ——
Going Threshold
-
VBS Supply Undervoltage Negative 19.1 20.8 22.4 —— V
Going Threshold
+
VCC Supply Overvoltage Positive 8.3 8.8 9.6 ——
Going Threshold
-
VCC Supply Undervoltage Negative 7.3 8.1 8.7 ——
Going Threshold
+
VCC Supply Overvoltage Positive 20 21.2 23 ——
Going Threshold
-
VCC Supply Undervoltage Negative 19.3 20.7 22.5 ——
Going Threshold
ERR Timing Charge Current 40 100 130 ——µA IN = 5V, CS = 3V
+
ERR Pull-up Current 8.0 15 ——— IN = 5V, CS = 3V
-
ERR Pull-down Current 16 30 ——— IN = 0V
High Level Output Voltage VB-0.1 ——VB-0.1 — IN = 5V , IO = 0A
Low Level Output Voltage ——VS+0.1 — VS+0.1 IN = 0V, IO = 0A
OL
S.
-55 to 125°C
mV
mA
V
Ω
= 10 TO 20V
CC
CC
CC
ERR < V
ERR > V
ERR
ERR
< 20V
< 20V
+
+
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IR2125Z
IN
CS
HV = 10 to 400 V
ERR
HO
Figure 1. Input/Output Timing Diagram
50%
50%
IN
t
on
HO
Figure 3. Switching Time Waveform Definitions
t
r
10%
90%
90%
10%
t
f
t
off
< 50 V/ns
"
Figure 2. Floating Supply Voltage Transient Test Circuit
50%
CS
t
cs
OUT
Figure 4. ERR Shutdown Waveform Definitions
90%
50%
CS
t
I
dV
ERR
err
50%
1.8V
dt
1.8V
C
100 uA
50%
CS
t
cs
HO
Figure 5. CS Shutdown Waveform Definitions
90%
ERR
=× =×
dt C
Figure 6. CS to ERR Waveform Definitions
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IR2125Z
500
400
300
200
Max.
Turn-On Delay Time (ns)
Typ.
100
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
500
400
300
Max.
Typ.
200
Turn-On Time (ns)
100
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage
500
400
300
200
Max.
Turn-Off Delay Time (ns)
Typ.
100
500
400
300
Max.
200
Typ.
Turn-Off Time (ns)
100
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage
5.00
4.00
3.00
Max.
2.00
Typ.
1.00
ERR to Output Shutdown Delay Time (µs)
0.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 9A. ERR to Output Shutdown vs. Temperature
5.00
4.00
3.00
2.00
Max.
Typ.
1.00
ERR to Output Shutdown Delay Time (µs)
0.00
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 9B. ERR to Output Shutdown vs. Voltage
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