International Rectifier ST280CH06C3L, ST280CH06C3, ST280CH06C2L, ST280CH06C2, ST280CH06C1L Datasheet
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D-302
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
500A
PHASE CONTROL THYRISTORS Hockey Puk Version
D-303
ST280CH..C SERIES
Bulletin I25160/B
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
500 A
@ T
hs
80 °C
I
T(RMS)
1130 A
@ T
hs
25 °C
I
TSM
@ 50Hz 7200 A
@ 60Hz 7500 A
I
2
t @ 50Hz 260 KA2s
@ 60Hz 230 KA
2
s
V
DRM/VRRM
400 to 600 V
t
q
typical 100 µs
T
J
- 40 to 150 °C
Parameters ST280CH..C Units
Major Ratings and Characteristics
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Extended temperature range
case style TO-200AB (A-PUK)
ST280CH..C Series
2222222222222
12
D-304
Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TJ = TJ max
V V mA
04 400 500
06 600 700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current 500 (185) A 180° conduction, half sine wave
@ Heatsink temperature 80 (110) °C double side (single side) cooled
I
T(RMS)
Max. RMS on-state current 1130 DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle 7200 t = 10ms No voltage
non-repetitive surge current 7500 A t = 8.3ms reapplied
6000 t = 10ms 100% V
RRM
6300 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 260 t = 10ms No voltage Initial TJ = TJ max.
235 t = 8.3ms reapplied
180 t = 10ms 100% V
RRM
165 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 2600 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage 1.35 V Ipk= 1000A, TJ = TJ max, tp = 10ms sine pulse
I
H
Maximum holding current 600
I
L
Max (typical) latching current 1000 (300)
0.84 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.50 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.47 (I > π x I
T(AV)
),TJ = TJ max.
Parameter ST280CH..C Units Conditions
0.88 (I > π x I
T(AV)
),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t
r
≤ 1µs
of turned-on current T
J
= TJ max, anode voltage ≤ 80% V
DRM
Gate current 1A, dig/dt = 1A/µs
V
d
= 0.67% V
DRM, TJ
= 25°C
I
TM
= 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt
= 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST280CH..C Units Conditions
Switching
1000 A/µs
t
d
Typical delay time 1.0
t
q
Typical turn-off time 100
µs
ST280CH..C 75
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