International Rectifier ST173C12CHK1, ST173C12CHK0, ST173C10HK1L, ST173C10HK0L, ST173C10CHK3L Datasheet
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D-510
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
330A
INVERTER GRADE THYRISTORS Hockey Puk Version
ST173C..C SERIES
D-511
Bulletin I25180/A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AB (A-PUK)
I
T(AV)
330 A
@ T
hs
55 °C
I
T(RMS)
610 A
@ T
hs
25 °C
I
TSM
@ 50Hz 4680 A
@ 60Hz 4900 A
I
2
t @ 50Hz 110 KA2s
@ 60Hz 100 KA
2
s
V
DRM/VRRM
1000 to1200 V
t
q
range 15 to 30 µs
T
J
- 40 to 125 °C
Major Ratings and Characteristics
Parameters ST173C..C Units
ST173C..C Series
D-512
Voltage V
DRM/VRRM
, maximum V
RSM
, maximum I
DRM/IRRM
max.
Type number Code repetitive peak voltage non-repetitive peak voltage
@ TJ = TJ max.
V V mA
10 1000 1100
12 1200 1300
I
T(AV)
Max. average on-state current 330 (120) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
I
T(RMS)
Max. RMS on-state current 610 DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle, 4680 t = 10ms No voltage
non-repetitive surge current 4900 A t = 8.3ms reapplied
3940 t = 10ms 100% V
RRM
4120 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 110 t = 10ms No voltage Initial TJ = TJ max
100 t = 8.3ms reapplied
77 t = 10ms 100% V
RRM
71 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 1100 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST173C..C Units Conditions
On-state Conduction
KA2s
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST173C..C 40
Frequency Units
50Hz 760 660 1200 1030 5570 4920
400Hz 730 590 1260 1080 2800 2460
1000Hz 600 490 1200 1030 1620 1390 A
2500Hz 350 270 850 720 800 680
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF
I
TM
180oel
180
o
el
100µs
I
TM
I
TM
Current Carrying Capability
V
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