International Rectifier Si4435DY Datasheet

PD- 93768A

Si4435DY

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel

Description

S

S

S

1

2

3

4

Top View

A

8

D

V

= -30V

R

DS(on)

DSS

= 0.020Ω

7

D

6

D

5

DG

These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.

SO-8

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -6.4 A
I

DM

PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6

V

GS

T

J, TSTG

Drain- Source Voltage -30 V

Pulsed Drain Current  -50

Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 50 °C/W

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10/14/99

Si4435DY

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.019 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 0.015 0.020 VGS = -10V, ID = -8.0A 
––– 0.026 0.035 VGS = -4.5V, ID = -5.0A 

Ω

Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance ––– 11 ––– S VDS = -15V, ID = -8.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -10 VDS = -24V, VGS = 0V
––– ––– -10 VDS = -15V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 40 60 ID = -4.6A
Gate-to-Source Charge ––– 7.1 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 8.0 ––– VGS = -10V 
Turn-On Delay Time ––– 16 24 VDD = -15V, VGS = -10V 
Rise Time ––– 76 110 ID = -1.0A
Turn-Off Delay Time ––– 130 200 RG = 6.0Ω

ns

Fall Time ––– 90 140 RD = 15Ω
Input Capacitance ––– 2320 ––– VGS = 0V
Output Capacitance –– – 390 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

–––

–––

-2.5

-50

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V 
Reverse Recovery Time ––– 34 51 n s TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 33 50 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on FR-4 board, t ≤ 5sec.

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

Si4435DY

1000

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

100

VGS

TOP

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

BOTTOM

-2.7V

-2.70V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

T = 25 C

J

°

T = 150 C

J

1000

100

10

TOP

BOTTOM

VGS

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-2.7V

-2.70V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 150 C

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

°

1.5

I =

D

-8.0A

10

1.0

(Normalized)

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

2.0 3.0 4.0 5.0 6.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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