International Rectifier SD853C30S50K, SD853C36S50K, SD853C40S50K, SD853C45S50K Datasheet
DISCRETE POWER DIODES and THYRISTORS
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D-732
Bulletin I2093/B
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SD853C..S50K SERIES
FAST RECOVERY DIODES
Features
High power FAST rectifier diode series
5.0 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AC (K-PUK)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters SD853C..S50K Units
I
F(AV)
@ T
hs
I
F(RMS)
@ T
hs
I
FSM
2
I
t @ 50Hz 1810 KA2s
@ 50Hz 19000 A
@ 60Hz 19900 A
@ 60Hz 1652 KA
990 A
55 °C
1800 A
25 °C
Hockey Puk Version
990A
case style DO-200AC (K-PUK)
2
s
V
RRM
t
rr
T
J
range 3000 to 4500 V
5.0 µs
@ T
J
25 °C
- 40 to 125 °C
D-733
SD853C..S50K Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak reverse voltage repetitive peak rev. voltage
30 3000 3100
SD853C..S50K
36 3600 3700
40 4000 4100
45 4500 4600
Forward Conduction
Parameter SD853C..S50K Units Conditions
I
Max. average forward current 990 (420) A 180° conduction, half sine wave
F(AV)
@ Heatsink temperature 55 (85) °C Double side (single side) cooled
I
Max. RMS forward current 1800 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle forward, 19000 t = 10ms No voltage
FSM
non-repetitive surge current 19900 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 1805 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 18050 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
F(TO)1
voltage
V
High level value of threshold
F(TO)2
voltage
r
Low level value of forward
1
f
slope resistance
r
High level value of forward
2
f
slope resistance
V
Max. forward voltage drop 2.90 V Ipk= 2000A, TJ = 125°C, tp = 10ms sinusoidal wave
FM
, maximum repetitive V
RRM
V V mA
16000 t = 10ms 50% V
16750 t = 8.3ms reapplied Sinusoidal half wave,
1645 t = 8.3ms reapplied
1280 t = 10ms 50% V
1165 t = 8.3ms reapplied
1.50 (16.7% x π x I
1.67 (I > π x I
0.70 (16.7% x π x I
0.65 (I > π x I
A
KA2s
V
mΩ
, maximum non- I
RSM
RRM
RRM
< I < π x I
F(AV)
),TJ = TJ max.
F(AV)
F(AV)
),TJ = TJ max.
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
), TJ = TJ max.
F(AV)
@ TJ = 125°C
RRM
max.
100
Recovery Characteristics
Code
S50 5.0 1000 100 - 50 6.5 1000 270
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
Square Pulse @ 25% I
di/dt (*) V
pk
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
D-734
= 125 °C
J
QrrI
rr
SD853C..S50K Series
To Order
Index
Previous Datasheet
Next Data Sheet
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak reverse voltage repetitive peak rev. voltage
30 3000 3100
SD853C..S50K
36 3600 3700
40 4000 4100
45 4500 4600
Forward Conduction
Parameter SD853C..S50K Units Conditions
I
Max. average forward current 990 (420) A 180° conduction, half sine wave
F(AV)
@ Heatsink temperature 55 (85) °C Double side (single side) cooled
I
Max. RMS forward current 1800 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle forward, 19000 t = 10ms No voltage
FSM
non-repetitive surge current 19900 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 1805 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 18050 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
F(TO)1
voltage
V
High level value of threshold
F(TO)2
voltage
r
Low level value of forward
1
f
slope resistance
r
High level value of forward
2
f
slope resistance
V
Max. forward voltage drop 2.90 V Ipk= 2000A, TJ = 125°C, tp = 10ms sinusoidal wave
FM
, maximum repetitive V
RRM
V V mA
16000 t = 10ms 50% V
16750 t = 8.3ms reapplied Sinusoidal half wave,
1645 t = 8.3ms reapplied
1280 t = 10ms 50% V
1165 t = 8.3ms reapplied
1.50 (16.7% x π x I
1.67 (I > π x I
0.70 (16.7% x π x I
0.65 (I > π x I
A
KA2s
V
mΩ
, maximum non- I
RSM
RRM
RRM
< I < π x I
F(AV)
),TJ = TJ max.
F(AV)
F(AV)
),TJ = TJ max.
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
), TJ = TJ max.
F(AV)
@ TJ = 125°C
RRM
max.
100
Recovery Characteristics
Code
S50 5.0 1000 100 - 50 6.5 1000 270
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
Square Pulse @ 25% I
di/dt (*) V
pk
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
D-734
= 125 °C
J
QrrI
rr
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