International Rectifier SD823C12S20C, SD823C12S30C, SD823C16S20C, SD823C16S30C, SD823C20S20C Datasheet
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Bulletin I2074/B
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SD823C..C SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Hockey Puk version case style B-43
Maximum junction temperature 150°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters Units
I
F(AV)
@ T
hs
I
F(RMS)
I
FSM
@ 50Hz 9300 9600 A
@ 60Hz 9730 10050 A
SD823C..C
S20 S30
810 910 A
55 55 °C
1500 1690 A
Hockey Puk Version
810A
910A
case style B-43
V
RRM
t
rr
T
J
range 1200 to 2500 1200 to 2500 V
2.0 3.0 µs
@ T
J
25 25 °C
- 40 to 150 °C
D-715
SD823C..C Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak reverse voltage repetitive peak rev. voltage
12 1200 1300
SD823C..C 50
16 1600 1700
20 2000 2100
25 2500 2600
Forward Conduction
Parameter Units Conditions
I
Max. average forward current 810 (425) 910 (470) A 180° conduction, half sine wave
F(AV)
@ heatsink temperature 55 (85) 55 (85) °C Double side (single side) cooled
I
Max. RMS forward current 1500 1690 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle forward, 9300 9600 t = 10ms No voltage
FSM
non-repetitive surge current 9730 10050 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 432 460 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 4320 4600 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
F(TO)1
voltage
V
High level value of threshold
F(TO)2
voltage
r
Low level value of forward
1
f
slope resistance
r
High level value of forward
2
f
slope resistance
V
Max. forward voltage drop 2.20 1.85 V Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave
FM
, maximum repetitive V
RRM
, maximum non- I
RSM
V V mA
SD823C..C
S20 S30
7820 8070 t = 10ms 100% V
8190 8450 t = 8.3ms reapplied Sinusoidal half wave,
395 420 t = 8.3ms reapplied
306 326 t = 10ms 100% V
279 297 t = 8.3ms reapplied
1.00 0.95 (16.7% x π x I
1.11 1.06 (I > π x I
0.80 0.60 (16.7% x π x I
0.76 0.57 (I > π x I
A
KA2s
V
mΩ
F(AV)
),TJ = TJ max.
F(AV)
F(AV)
),TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
F(AV)
F(AV)
@ TJ = TJ max.
), TJ = TJ max.
), TJ = TJ max.
RRM
max.
Recovery Characteristics
Code
S20 2.0 1000 50 - 50 3.5 240 110
S30 3.0 1000 50 - 50 5.0 380 130
T
= 25 oC
J
Typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
D-716
= 150 °C
J
QrrI
rr
SD823C..C Series
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Fig. 3 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 7 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics
D-719
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