International Rectifier SD303C04S20C, SD303C08S10C, SD303C08S20C, SD303C10S10C, SD303C10S15C Datasheet
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Bulletin I2066/B
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SD303C..C SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters SD303C..C Units
I
F(AV)
@ T
hs
I
F(RMS)
@ T
hs
I
FSM
2
I
t @ 50Hz 166 KA2s
@ 50Hz 5770 A
@ 60Hz 6040 A
@ 60Hz 152 KA
350 A
55 °C
550 A
25 °C
Hockey Puk Version
350A
case style DO-200AA
2
s
V
RRM
t
rr
T
J
range 400 to 2500 V
range 1.0 to 2.0 µs
@ T
J
25 °C
- 40 to 125 °C
D-655
SD303C..C Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak and off-state voltage repetitive peak voltage T
04 400 500
SD303C..S10C 08 800 900
10 1000 1100
12 1200 1300
SD303C..S15C 14 1400 1500
16 1600 1700
SD303C..S20C
20 2000 2100
25 2500 2600
Forward Conduction
Parameter SD303C..C Units Conditions
I
Max. average forward current 350(175) A 180° conduction, half sine wave.
F(AV)
@ Heatsink temperature 55(75) °C Double side (single side) cooled
I
Max. RMS current 550 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle 5770 t = 10ms No voltage
FSM
non-repetitive forward current 6040 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 166 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 1660 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level of threshold voltage 1.14 (16.7% x π x I
F(TO)1
V
High level of threshold voltage 1.63 (I > π x I
F(TO)
2
r
Low level of forward slope resistance 1.14 (16.7% x π x I
f1
r
High level of forward slope resistance 0.77 (I > π x I
f2
V
Max. forward voltage 2.26 V Ipk= 1100A, TJ = 25°C, tp = 10ms sinusoidal wave
FM
max. repetitive V
RRM
, maximum non- I
RSM
V V mA
4850 t = 10ms 100% V
5080 t = 8.3ms reapplied Sinusoidal half wave,
152 t = 8.3ms reapplied
117 t = 10ms 100% V
107 t = 8.3ms reapplied
A
KA2s
V
mΩ
F(AV)
), TJ = TJ max.
F(AV)
F(AV)
), TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
), TJ = TJ max.
F(AV)
), TJ = TJ max.
F(AV)
2222222222222
max.
RRM
= 125°C
J
35
12
Recovery Characteristics
Code
S10 1.0 2.4 52 33
S15 1.5 750 25 -30 2.9 90 44
S20 2.0 3.2 107 46
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
D-656
= 125 °C
J
QrrI
rr
SD303C..C Series
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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 6 - Forward Power Loss CharacteristicsFig. 5 - Forward Power Loss Characteristics
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
D-659
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