SD1100C..C Series
Voltage V
RRM
, maximum repetitive V
RSM
, maximum non- I
RRM
max.
Type number Code peak reverse voltage repetitive peak rev. voltage
@ TJ = TJ max.
V V mA
04 400 500
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
25 2500 2600
30 3000 3100
32 3200 3300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD1100C..C 15
Forward Conduction
Parameter Units Conditions
I
F(AV)
Max. average forward current 1400(795) 1100(550) A 180° conduction, half sine wave
@ Heatsink temperature 55(85) 55(85) °C Double side (single side) cooled
I
F(RMS)
Max. RMS forward current 2500 2000 A @ 25°C heatsink temperature double side cooled
I
FSM
Max. peak, one-cycle forward, 13000 10500 t = 10ms No voltage
non-repetitive surge current 13600 11000 t = 8.3ms reapplied
10930 8830 t = 10ms 100% V
RRM
11450 9250 t = 8.3ms reapplied Sinusoidal halfwave,
I
2
t Maximum I2t for fusing 846 551 t = 10ms No voltage Initial TJ = TJ max.
772 503 t = 8.3ms reapplied
598 390 t = 10ms 100% V
RRM
546 356 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 8460 5510 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
Low level value of forward
slope resistance
r
f
2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop 1.31 1.44 V Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave
A
KA2s
SD1100C..C
04 to 20 25 to 32
V
mΩ
0.26 0.38 (I > π x I
F(AV)
),TJ = TJ max.
0.35 0.40 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
0.94 0.88 (I > π x I
F(AV)
),TJ = TJ max.
0.78 0.84 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.