International Rectifier JANTXV2N6770, JANTX2N6770 Datasheet
HEXFET
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®
POWER MOSFET
Provisional Data Sheet No. PD-9.330E
JANTX2N6770
JANTXV2N6770
[REF:MIL-PRF-19500/543]
[GENERIC:IRF450]
N-CHANNEL
500 Volt, 0.40
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
ΩΩ
Ω HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6770
JANTXV2N6770
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
Absolute Maximum Ratings
Parameter JANTX2N6770,JANTXV2N6770 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 12
ID @ VGS = 10V , TC = 100°C Continuous Drain Current 7.75
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
IARAvalanche Current ➀ 12 A
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 3.5
T
J
T
STG
Pulsed Drain Current ➀ 48
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 8mJ
Repetitive Avalanche Energy ➀ —mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature 300
Weight 11.5 (typical) g
500V
(0.063 in. (1.6mm) from
case for 10.5 seconds)
0.40Ω
A
V/ns
o
C
12A
JANTX2N6770, JANTXV2N6770 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V , ID = 1.0 mA
/∆TJT emperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.40 VGS = 10V, ID = 7.75A
On-State Resistance — — 0.50 Ω VGS = 10V, ID = 12A
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 5.5 — — S ( )VDS > 15V , IDS = 7.75A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge 55 — 120 VGS = 10V , ID = 12A
Gate-to-Source Charge 5.0 — 19 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 27 — 70 see figures 6 and 13
Turn-On Delay T ime — — 35 VDD = 250V, ID = 12A,
Rise Time — — 190 RG = 3.5Ω, VGS = 10V
Turn-Off Delay Time — — 170
Fall Time — — 13 0 see figure 10
Internal Drain Inductance — 5.0 —
Internal Source Inductance — 13 —
Input Capacitance — 2700 — VGS = 0V, VDS = 25V
Output Capacitance — 600 — f = 1.0 MHz
Reverse Transfer Capacitance — 240 — see figure 5
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 12 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ ——48 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.7 V Tj = 25°C, IS = 12A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 1600 ns Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 14 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 0.83
Junction-to-Ambient — — 48 K/W
A
≤ 50V ➃
DD
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