International Rectifier JANTXV2N6758, JANTX2N6758 Datasheet

HEXFET
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®
POWER MOSFET
Provisional Data Sheet No. PD-9.334E
JANTX2N6758
JANTXV2N6758
[REF:MIL-PRF-19500/542]
[GENERIC:IRF230]
N-CHANNEL
200 Volt, 0.40
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis­tors. The efficient geometry achieves very low on­state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es­tablish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtu­ally any application where high reliability is required.
ΩΩ
HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6758
JANTXV2N6758
Features:
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Hermetically Sealed
Absolute Maximum Ratings
Parameter JANTX2N6758, JANTXV2N6758 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 9
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 6
I
DM
PD @ TC = 25°C Max. Power Dissipation 75 W
V
GS
E
AS
I
AR
EARRepetitive Avalanche Energy 7.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0
T
J
T
STG
Pulsed Drain Current 36
Linear Derating Factor 0.60 W/K Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 54 mJ Avalanche Current 9A
Operating Junction -55 to 150 Storage Temperature Range
Lead Temperature 300
Weight 11.5 (typical) g
200V
(0.063 in. (1.6mm) from
case for 10.5 seconds)
0.40
A
V/ns
o
C
9A
JANTX2N6758, JANTXV2N6758 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
BV R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 1.0 mA
/TJTemperature Coefficient of Breakdown 0.29 V/°C Reference to 25°C, ID = 1.0 mA
Voltage Static Drain-to-Source 0.40 VGS = 10V, ID = 6.0A On-State Resistance 0.49 VGS = 10V, ID = 9.0A Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 3.0 S ( )VDS > 15V, IDS = 6.0A Zero Gate Voltage Drain Current 25 VDS = 0.8 x Max Rating,VGS = 0V
250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward 1 00 VGS = 20V Gate-to-Source Leakage Reverse -100 VGS = -20V Total Gate Charge 16 39 VGS = 10V, ID = 9.0A Gate-to-Source Charge 3.0 5.7 VDS = Max. Rating x 0.5 Gate-to-Drain (“Miller”) Charge 8.0 20 see figures 6 and 13 Turn-On Delay T ime 35 VDD = 100V, ID = 9.0A, Rise Time 80 RG = 7.5, VGS = 10V Turn-Off Delay Time 60 Fall Time 40 see figure 10 Internal Drain Inductance 5.0
Internal Source Inductance 13.0
Input Capacitance 600 VGS = 0V, VDS = 25V Output Capacitance 250 f = 1.0 MHz Reverse Transfer Capacitance 80 see figure 5
µA
nA
nC
ns
Measured from the drain lead, 6mm (0.25 in.) from package to center of die.
nH
Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET symbol showing the internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) 9 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ——36 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage 1.4 V Tj = 25°C, IS = 9.0A, VGS = 0V
SD
t
Reverse Recovery Time 500 ns Tj = 25°C, IF = 9.0A, di/dt 100A/µs
rr
Q
Reverse Recovery Charge 6.0 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R R
thJC thJA
Junction-to-Case — 1.67 Junction-to-Ambient 30 K/W Typical socket mount
A
≤ 50V
DD
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