International Rectifier JANTXV2N6770, JANTX2N6770 Datasheet

HEXFET
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®
POWER MOSFET
Provisional Data Sheet No. PD-9.330E
JANTX2N6770
JANTXV2N6770
[REF:MIL-PRF-19500/543]
[GENERIC:IRF450]
N-CHANNEL
500 Volt, 0.40
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis­tors. The efficient geometry achieves very low on­state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es­tablish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtu­ally any application where high reliability is required.
ΩΩ
HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6770
JANTXV2N6770
Features:
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Hermetically Sealed
Absolute Maximum Ratings
Parameter JANTX2N6770,JANTXV2N6770 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 12
ID @ VGS = 10V , TC = 100°C Continuous Drain Current 7.75
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
IARAvalanche Current 12 A
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5
T
J
T
STG
Pulsed Drain Current 48
Linear Derating Factor 1.2 W/K Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 8mJ
Repetitive Avalanche Energy —mJ
Operating Junction -55 to 150 Storage T emperature Range
Lead Temperature 300
Weight 11.5 (typical) g
500V
(0.063 in. (1.6mm) from
case for 10.5 seconds)
0.40
A
V/ns
o
C
12A
JANTX2N6770, JANTXV2N6770 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
BV R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 V VGS = 0V , ID = 1.0 mA
/TJT emperature Coefficient of Breakdown 0.78 V/°C Reference to 25°C, ID = 1.0 mA
Voltage Static Drain-to-Source 0.40 VGS = 10V, ID = 7.75A On-State Resistance 0.50 VGS = 10V, ID = 12A Gate Threshold V oltage 2.0 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 5.5 S ( )VDS > 15V , IDS = 7.75A Zero Gate Voltage Drain Current 25 VDS = 0.8 x Max Rating,VGS = 0V
250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward 100 VGS = 20V Gate-to-Source Leakage Reverse -100 VGS = -20V T otal Gate Charge 55 120 VGS = 10V , ID = 12A Gate-to-Source Charge 5.0 19 VDS = Max. Rating x 0.5 Gate-to-Drain (“Miller”) Charge 27 70 see figures 6 and 13 Turn-On Delay T ime 35 VDD = 250V, ID = 12A, Rise Time 190 RG = 3.5, VGS = 10V Turn-Off Delay Time 170 Fall Time 13 0 see figure 10 Internal Drain Inductance 5.0
Internal Source Inductance 13
Input Capacitance 2700 VGS = 0V, VDS = 25V Output Capacitance 600 f = 1.0 MHz Reverse Transfer Capacitance 240 see figure 5
µA
nA
nC
ns
Measured from the drain lead, 6mm (0.25 in.) from package to center of die.
nH
Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET symbol showing the internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) 12 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ——48 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage 1.7 V Tj = 25°C, IS = 12A, VGS = 0V
SD
t
Reverse Recovery Time 1600 ns Tj = 25°C, IF = 12A, di/dt 100A/µs
rr
Q
Reverse Recovery Charge 14 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R R
thJC thJA
Junction-to-Case — 0.83 Junction-to-Ambient 48 K/W
A
50V
DD
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