International Rectifier JANTXV2N6766, JANTX2N6766 Datasheet
HEXFET
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®
POWER MOSFET
Provisional Data Sheet No. PD-9.338D
JANTX2N6766
JANTXV2N6766
[REF:MIL-PRF-19500/543]
[GENERIC:IRF250]
N-CHANNEL
200 V olt, 0.085
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical parameter temperature stability . They are well-suited for applications such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
ΩΩ
Ω HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6766
JANTXV2N6766
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
Absolute Maximum Ratings
Parameter JANTX2N6766, JANTXV2N6766 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 30
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 19
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.0
T
J
T
STG
Pulsed Drain Current ➀ 120
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ 30 A
Repetitive Avalanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature 300
Weight 11.5 (typical) g
200V
(0.063 in. (1.6mm) from
case for 10.5 seconds)
0.085Ω
A
V/ns
o
C
30A
JANTX2N6766, JANTXV2N6766 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.29 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.085 VGS = 10V, ID = 19A
On-State Resistance — — 0.090 Ω VGS = 10V, ID = 30A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 9.0 — — S ( )VDS > 15V, IDS = 19A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 55 — 115 VGS = 10V, ID = 30A
Gate-to-Source Charge 8 — 22 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 30 — 60 see figures 6 and 13
Turn-On Delay T ime — — 35 VDD = 100V, ID = 30A,
Rise Time — — 190 RG = 3.5Ω, VGS = 10V
Turn-Off Delay Time — — 170
Fall Time — — 13 0 see figure 10
Internal Drain Inductance — 5.0 —
Internal Source Inductance — 13 —
Input Capacitance — 3500 — VGS = 0V, VDS = 25V
Output Capacitance — 700 — f = 1.0 MHz
Reverse Transfer Capacitance — 110 — see figure 5
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 30 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 120 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.9 V Tj = 25°C, IS = 30A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 95 0 ns Tj = 25°C, IF = 30A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 9.0 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 0.83
Junction-to-Ambient — — 48 K/W Typical socket mount
A
≤ 50V ➃
DD
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