International Rectifier JANTXV2N6764, JANTX2N6764 Datasheet
HEXFET
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®
POWER MOSFET
Provisional Data Sheet No. PD-9.337E
JANTX2N6764
JANTXV2N6764
[REF:MIL-PRF-19500/543]
[GENERIC:IRF150]
N-CHANNEL
100 Volt, 0.055
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical parameter temperature stability . They are well-suited for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, and high
energy pulse circuits, and virtually any application where
high reliability is required.
ΩΩ
Ω HEXFET
ΩΩ
Absolute Maximum Ratings
Parameter JANTX2N6764, JANTXV2N6764 Units
ID @ VGS = 10V , TC = 25°C Continuous Drain Current 38
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 24
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.5
T
J
T
STG
Pulsed Drain Current ➀ 152
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 150 mJ
Avalanche Current ➀ 38 A
Repetitive Avalanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300
Weight 11.5 (typical) g
Product Summary
Part Number BV DSS RDS(on) I D
JANTX2N6764
JANTXV2N6764
100V
0.055Ω
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
(0.063 in. (1.6mm) from
case for 10 seconds)
A
V/ns
o
C
38A
JANTX2N6764, JANTXV2N6764 Device
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.055 VGS = 10V, ID = 24A
On-State Resistance — — 0.065 Ω VGS = 10V, ID = 38A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 9 — — S ( )VDS > 15V, IDS = 24A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 50 — 125 VGS = 10V, ID = 38A
Gate-to-Source Charge 8 — 22 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 25 — 65 see figures 6 and 13
Turn-On Delay Time — — 35 VDD = 50V, ID = 38A,
Rise Tim e — — 190 RG = 2.35Ω, VGS = 10V
Turn-Off Delay Time — — 1 70
Fall Time — — 130 see figure 10
Internal Drain Inductance — 5.0 —
Internal Source Inductance — 13 —
Input Capacitance — 3700 — VGS = 0V, VDS = 25V
Output Capacitance — 1100 — f = 1.0 MHz
Reverse Transfer Capacitance — 200 — see figure 5
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 38 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 152 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 38A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 500 ns Tj = 25°C, IF = 38A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 2.9 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 0.83
Junction-to-Ambient — — 48 K/W Typical socket mount
A
≤ 50V ➃
DD
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