International Rectifier IRFU9N20D, IRFR9N20D Datasheet
SMPS MOSFET
PD - 93919A
IRFR9N20D
IRFU9N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max I
200V 0.38Ω 9.4A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR9N20D
I-Pak
IRFU9N20D
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.4
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.7 A
I
DM
PD @TC = 25°C Power Dissipation 86 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 38
Linear Derating Factor 0.57 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through are on page 10
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6/29/00
IRFR9N20D/IRFU9N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 74 ––– VGS = 0V, VDS = 0V to 160V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θJA
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2 www.irf.com
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance – –– ––– 0.38 Ω VGS = 10V, ID = 5.6A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 4.3 ––– ––– S VDS = 50V, ID = 5.6A
Total Gate Charge ––– 18 2 7 ID = 5.6A
Gate-to-Source Charge ––– 4.7 7.1 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 9.0 14 VGS = 10V,
Turn-On Delay Time ––– 7.5 ––– VDD = 100V
Rise Time ––– 16 ––– ID = 5.6A
Turn-Off Delay Time ––– 13 ––– RG = 11Ω
ns
Fall Time ––– 9.3 ––– VGS = 10V
Input Capacitance ––– 560 ––– VGS = 0V
Output Capacitance ––– 97 ––– VDS = 25V
Reverse Transfer Capacitance ––– 29 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 670 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 40 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 100 mJ
Avalanche Current ––– 5.6 A
Repetitive Avalanche Energy ––– 8.6 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 1.75
Junction-to-Ambient (PCB mount)* – –– 50 °C/W
Junction-to-Ambient ––– 110
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.6A, VGS = 0V
Reverse Recovery Time ––– 130 ––– ns TJ = 25°C, IF = 5.6A
Reverse RecoveryCharge ––– 560 ––– nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
9.4
38
showing the
A
p-n junction diode.
G
D
S
IRFR9N20D/IRFU9N20D
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM
5.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
5.5V
°
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 175 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
9.4A
2.5
10
1
D
I , Drain-to-Source Current (A)
0.1
4 6 8 10 12
°
T = 175 C
J
°
T = 25 C
J
V = 50V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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