International Rectifier IRFR9024NTRR, IRFR9024NTRL, IRFR9024NTR Datasheet
IRFR/U9024N
PRELIMINARY
HEXFET® Power MOSFET
6/26/97
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.3
R
θJA
Junction-to-Ambient (PCB mount)** ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
D -P a k
TO-252AA
I-P a k
TO-251AA
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR9024N)
l Straight Lead (IRFU9024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -11
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8 A
I
DM
Pulsed Drain Current -44
PD @TC = 25°C Power Dissipation 38 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 62 mJ
I
AR
Avalanche Current -6.6 A
E
AR
Repetitive Avalanche Energy 3.8 mJ
dv/d t Peak Diode Recovery dv/dt -10 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 9.1506
V
DSS
= -55V
R
DS(on)
= 0.175Ω
I
D
= -11A
S
D
G
IRFR/U9024N
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V
t
rr
Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2A
Q
rr
Reverse Recovery Charge ––– 84 130 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
-11
-44
A
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Starting T
J
= 25°C, L = 2.8mH
RG = 25Ω, I
AS
= -6.6A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -6.6A, di/dt ≤ 240A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -6.6A
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
g
fs
Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A
––– ––– - 25
µA
VDS = -55V, VGS = 0V
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
VGS = -20V
Q
g
Total Gate Charge ––– ––– 19 ID = -7.2A
Q
gs
Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 13 ––– VDD = -28V
t
r
Rise Time ––– 55 ––– ID = -7.2A
t
d(off)
Turn-Off Delay Time ––– 23 ––– RG = 24Ω
t
f
Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 3 5 0 ––– VGS = 0V
C
oss
Output Capacitance ––– 170 –– – pF VDS = -25V
C
rss
Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Uses IRF9Z24N data and test conditions.
IRFR/U9024N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-11A
0.1
1
10
100
4 5 6 7 8 9 10
V = -25V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 150 C
J
°
T = 25 C
J
°
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