International Rectifier IRFU6215, IRFR6215 Datasheet
PD - 91749
PRELIMINARY
IRFR/U6215
HEXFET® Power MOSFET
l P-Channel
l 175°C Operating Temperature
l Surface Mount (IRFR6215)
l Straight Lead (IRFU6215)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -13
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -9.0 A
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current -44
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 310 mJ
Avalanche Current -6.6 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
Junction-to-Ambient ––– 110
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D
S
D - PAK
TO -252AA
V
DSS
R
DS(on)
ID = -13A
I-P AK
TO-251AA
= -150V
= 0.295Ω
°C
5/11/98
IRFR/U6215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.295 VGS = -10V, ID = -6.6A
––– ––– 0.58 VGS = -10V, ID = -6.6A TJ = 150°C
Ω
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 3.6 ––– –– – S VDS = -50V, ID = -6.6A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
VDS = -150V, VGS = 0V
µA
VGS = 20V
nA
Total Gate Charge ––– –– – 66 ID = -6.6A
Gate-to-Source Charge ––– ––– 8 .1 nC VDS = -120V
Gate-to-Drain ("Miller") Charge ––– ––– 35 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -75V
Rise Time ––– 36 –––
Turn-Off Delay Time ––– 53 ––– RG = 6.8Ω
ns
ID = -6.6A
Fall Time ––– 37 ––– RD = 12Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 860 ––– VGS = 0V
Output Capacitance ––– 220 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-13
-44
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V
Reverse Recovery Time ––– 160 240 n s TJ = 25°C, IF = -6.6A
Reverse RecoveryCharge ––– 1.2 1.7 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
D
G
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
= 25°C, L = 14mH
J
= -6.6A. (See Figure 12)
AS
≤-6.6A, di/dt ≤ -620A/µs, V
DD
≤ V
This is applied for I-PAK, L
center of die contact
,
(BR)DSS
Uses IRF6215 data and test conditions
of D-PAK is measured between lead and
S
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com
IRFR/U6215
A
A
)
A
A
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
D
-I , Drain -to-S ou rce C urre nt (A )
-4.5V
1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25 °C
c
Fig 1. Typical Output Characteristics
100
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
D
-I , Drain-to-Source Current (A)
-4. 5V
20µs PULSE WIDTH
T = 175°C
1
1 10 100
-V , Dra in-t o-Sou r ce Voltage (V
DS
C
Fig 2. Typical Output Characteristics
2.5
I = -11 A
D
2.0
T = 25°C
J
1.5
1.0
10
T = 175°C
J
(N ormali z ed)
D
-I , D ra in-to -So urc e C urre n t (A)
1
45678910
-V , G a te-to -So u rce V olta g e (V)
GS
V = - 5 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = -1 0V
GS
Vs. Temperature
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