International Rectifier IRFU5505, IRFR5505 Datasheet

l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR5505)
l Straight Lead (IRFU5505)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated

G

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.

PD - 9.1610B

IRFR/U5505

HEXFET® Power MOSFET

D

S

D -P a k
TO-252AA

V

DSS

R

DS(on)

ID = -18A

I-Pak
TO-251AA

= -55V

= 0.11Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -18
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -11 A
I

DM

PD @TC = 25°C Power Dissipation 57 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns
T

J

T

STG

Pulsed Drain Current  -64

Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 150 mJ
Avalanche Current -9.6 A
Repetitive Avalanche Energy 5.7 mJ

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

R

θJA

Junction-to-Case ––– 2.2
Junction-to-Ambient (PCB mount)** ––– 5 0 °C/W
Junction-to-Ambient ––– 110

°C

8/25/97

IRFR/U5505

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.049 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.11 Ω VGS = -10V, ID = -9.6A 
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 4.2 ––– ––– S VDS = -25V, ID = -9.6A

Drain-to-Source Leakage Current

––– ––– -25

––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– ––– 100

VDS = -55V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– ––– 32 ID = -9.6A
Gate-to-Source Charge ––– ––– 7.1 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– –– – 15 VGS = -10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 12 ––– VDD = -28V
Rise Time ––– 28 ––– ID = -9.6A
Turn-Off Delay Time ––– 20 ––– RG = 2.6Ω

ns
Fall Time ––– 16 ––– RD = 2.8Ω, See Fig. 10 
Internal Drain Inductance

Internal Source Inductance ––– –––

4.5

––– –––

7.5

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 65 0 ––– VGS = 0V
Output Capacitance ––– 270 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 120 – – – ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 150°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

-18

-64

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -9.6A, VGS = 0V 
Reverse Recovery Time – – – 51 77 ns TJ = 25°C, IF = -9.6A
Reverse RecoveryCharge ––– 110 160 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25°C, L = 3.2mH

J

= -9.6A. (See Figure 12)

AS

≤ -9.6A, di/dt ≤ 290A/µs, V

DD

≤ V

(BR)DSS

This is applied for I-PAK, L

lead and center of die contact

,

of D-PAK is measured between

S

D

G

S



IRFR/U5505

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM

-4.5V

-4.5V

20µs PULSE WIDTH

T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

100

100

10

D

-I , Drain-to-Source Current (A)

1

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM

-4.5V

-4.5V

20µs PULSE WIDTH

°

T = 150 C

J

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

-16A

°

T = 25 C

J

°

T = 150 C

10

J

1

D

-I , Drain-to-Source Current (A)

V = -25V

DS

0.1
4 5 6 7 8 9 10

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V =

GS

°

-10V