International Rectifier IRFU4105Z, IRFR4105Z Datasheet
PD - 94752
Pulsed Drain C
c
Single Pul
gy
d
Single Pul
h
Aval
c
R
g
J
(PCB
i
AUTOMOTIVE MOSFET
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
Absolute Maximum Ratings
Parameter Units
ID @ TC = 25°C
ID @ TC = 100°C
I
DM
PD @TC = 25°C
V
GS
E
AS (Thermally limited)
(Tested )
E
AS
I
AR
E
AR
T
J
T
STG
Contin uous Drain Current , V
Contin uous Drain Current , V
urrent
Power Dissipati on W
Linear D er a t i ng Factor W/°C
Gate-to-Sour c e V o l tage V
se Avalanche Ener
se Avalanche Energy Tested Value
anche Current
epetitive Avalanche Energy
Operat i n g J unction and
Storag e Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque , 6- 32 or M3 screw
@ 10V
GS
@ 10V
GS
Thermal Resistance
Parameter Typ. Max. Units
R
JC
θ
R
JA
θ
R
JA
θ
Junction-to-Case ––– 3.12
unction-to-Ambient
Junction-to-Ambient ––– 110
mount)
G
(Silicon Limited)
IRFR4105Z
IRFU4105Z
HEXFET® Power MOSFET
D
V
= 55V
DSS
R
S
®
D-Pak
IRFR4105Z
Max.
30
21
120
48
0.32
± 20
29
46
See Fig.12a, 12b, 15 , 16
-55 to + 175
300 (1. 6m m fr o m case )
y
in (1.1Nym)
10 lbf
––– 40 °C/W
DS(on)
ID = 30A
= 24.5mΩ
I-Pak
IRFU4105Z
A
mJ
A
mJ
HEXFET® is a registered trademark of International Rectifier.
www.irf.com 1
8/25/03
IRFR/U4105Z
/
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
∆
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs Forwa rd Tr a nsconductanc e 16 – –– ––– S
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff.
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-t o-Source Br eakdown Voltage 55 ––– ––– V
∆
T
Breakdown Voltage Tem p. Coeffi c ient ––– 0.053 ––– V/°C
J
Ω
Static Drai n-to-Source On-Resistance ––– 19 24.5
m
Gate Threshold Volt age 2.0 ––– 4.0 V
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leaka ge ––– ––– -200
Total Gate Charge ––– 18 27
Gate-to-Source Charge ––– 5.3 ––– nC
Gate -t o - D rain ("Mil l e r " ) Char g e ––– 7.0 – ––
Turn- On D elay Time ––– 10 –––
Rise Time –––40–––
Turn-Off Delay Time – –– 26 ––– ns
Fall Time –––24–––
Internal D rain Inductance ––– 4.5 ––– Betwee n lead,
nH 6mm (0.25in.)
Internal Sour ce Inductance ––– 7.5 ––– from package
Input Capacitance ––– 740 –––
Output Cap acitance ––– 140 –––
Reverse Transfer Capacitance ––– 74 ––– pF
Output Cap acitance ––– 450 –––
Output Cap acitance ––– 110 –––
Effective Output Capacitance ––– 180 –––
Parameter Min. Typ. Max. U nits
Conti n uous Sourc e Current ––– – –– 30
(Body Diode) A
Pulsed Source Current ––– ––– 120
(Body Diode)
Diode Forward Voltage ––– ––– 1.3 V
Reverse Reco ver y Ti me ––– 19 29 ns
Reverse Recovery Charge ––– 14 21 nC
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
c
Conditions
VGS = 0V, ID = 250µA
Referen ce to 25°C, I
= 10V, ID = 18A
V
GS
= 1mA
D
e
VDS = VGS, ID = 250µA
VDS = 15V, ID = 18A
= 55V, VGS = 0V
V
DS
= 55V, VGS = 0V, TJ = 125°C
V
DS
= 20V
V
GS
= -20V
V
GS
I
= 18A
D
= 44V
V
DS
VGS = 10V
e
VDD = 28V
= 18A
I
D
Ω
= 24.5
R
G
VGS = 10V
e
G
and center of die contact
VGS = 0V
= 25V
V
DS
ƒ = 1.0MHz
V
= 0V, VDS = 1.0V, ƒ = 1.0MHz
GS
= 0V, VDS = 44V, ƒ = 1. 0M Hz
V
GS
= 0V, VDS = 0V to 44V
V
GS
f
Conditions
MOSFET symbol
showing the
integral reverse
p-n junct ion diode.
T
= 25°C, IS = 18A, VGS = 0V
J
TJ = 25°C, IF = 18A, VDD = 28V
di/dt = 100A/µs
e
D
S
e
2 www.irf.com
IRFR/U4105Z
1000
V
TOP 15V
D
100
10
1
10V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
I
GS
8.0V
4.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
0 1 10 100
VDS, Drain-to-Sour ce Voltage (V)
1000
)
Α
(
t
100
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
10
1
TJ = 175°C
TJ = 25°C
V
= 25V
DS
60µs PULSE WIDTH
0
4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
1000
V
TOP 15V
100
D
10V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
I
GS
8.0V
4.5V
60µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
0 1 10 100
VDS, Drain-to-Sour ce Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
30
)
S
(
25
e
c
n
a
t
c
20
u
d
n
o
c
s
15
n
a
r
T
d
r
a
10
w
r
o
F
,
s
5
f
G
0
0 10203040
ID, Drain-to-Source Current (A)
TJ = 175°C
TJ = 25°C
V
= 8.0V
DS
380µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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IRFR/U4105Z
1200
1000
)
F
800
p
(
e
c
n
a
t
600
i
c
a
p
a
C
400
,
C
200
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
Ciss
Coss
+ Cgd, C
+ C
Crss
0
1 10 100
VDS, Drain-to-Sour ce Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.0
)
A
(
t
100.0
n
e
r
r
u
C
n
i
a
r
10.0
D
e
s
r
e
v
e
R
,
1.0
D
S
I
0.1
TJ = 175°C
TJ = 25°C
0.0 0.5 1.0 1.5 2.0
VSD, Source-toDrain V oltage (V)
20
SHORTED
ds
gd
ID= 18A
)
V
(
16
e
g
a
t
l
o
V
12
e
c
r
u
o
S
-
o
8
t
-
e
t
a
G
,
S
4
G
V
VDS= 44V
VDS= 28V
VDS= 11V
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 5 10 15 20 25 30
Q
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
V
GS
= 0V
1000
)
A
(
t
100
n
e
r
r
u
C
e
c
r
u
10
o
S
-
o
t
-
n
i
a
r
1
D
,
D
I
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
V
, Drain-toSource V oltage (V)
DS
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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