International Rectifier IRFR4105TRR, IRFR4105TRL Datasheet
IRFR/U4105
HEXFET® Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.045Ω
ID = 27A
Description
5/11/98
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 27
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 19 A
I
DM
Pulsed Drain Current 100
PD @TC = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 65 mJ
I
AR
Avalanche Current 16 A
E
AR
Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 2.2
R
θJA
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
D - PAK
TO -252AA
I-P AK
TO-251AA
l Ultra Low On-Resistance
l Surface Mount (IRFR4105)
l Straight Lead (IRFU4105)
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91302C
www.irf.com 1
IRFR/U4105
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.045 VGS = 10V, ID = 16A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 6.5 ––– –– – S VDS = 25V, ID = 16A
––– ––– 25
µA
VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Q
g
Total Gate Charge ––– –– – 34 ID = 16A
Q
gs
Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 7.0 ––– VDD = 28V
t
r
Rise Time ––– 49 –––
ns
ID = 16A
t
d(off)
Turn-Off Delay Time ––– 31 – –– RG = 18Ω
t
f
Fall Time ––– 40 ––– RD = 1.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 700 ––– VGS = 0V
C
oss
Output Capacitance ––– 240 ––– pF VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance ––– 7.5 –––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance ––– 4.5 –––
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– –– – 1.6 V TJ = 25°C, IS = 16A, VGS = 0V
t
rr
Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A
Q
rr
Reverse RecoveryCharge ––– 1 30 200 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
27
100
Notes:
V
DD
= 25V, starting TJ = 25°C, L = 410µH
RG = 25Ω, I
AS
= 16A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
I
SD
≤ 16A, di/dt ≤ 420A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Uses IRFZ34N data and test conditions
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
Pulse width ≤ 300µs; duty cycle ≤ 2%
IRFR/U4105
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
tion
0.1
1
10
100
1000
0.1 1 10 1 00
I , D ra in-to -S o u rc e Curre n t (A )
D
V , Drain -t o-Sou rc e Voltage (V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4. 5V
20µs PULSE WIDTH
T = 25°C
C
A
4.5V
0.1
1
10
100
1000
0.1 1 10 1 00
I , Drain-to-Source Current (A)
D
V , Drain -t o-Sou rc e Voltage (V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
45678910
T = 25°C
J
GS
V , Gate -to-S o urce V o ltage (V)
D
I , Drain-to -So u rce C u rren t (A)
A
V = 2 5V
20µs PULSE WIDTH
T = 175°C
J
DS
0.0
0.4
0.8
1.2
1.6
2.0
2.4
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , D ra in-to - So u rc e O n R e s is ta nc e
DS (on)
(Normalized)
V = 1 0 V
GS
A
I = 26 A
D
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