International Rectifier IRFR13N15D, IRFU13N15D Datasheet
SMPS MOSFET
PD - 93905A
IRFR13N15D
IRFU13N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max I
150V 0.18Ω 14A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR13N15D
I-Pak
IRFU13N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.8 A
I
DM
PD @TC = 25°C Power Dissipation 86 W
V
GS
dv/dt Peak Diode Recovery dv/dt 3.8 V/ns
T
J
T
STG
Pulsed Drain Current 56
Linear Derating Factor 0.57 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Typical SMPS Topologies
l Telecom 48V input Active Clamp Forward Converter
Notes through are on page 10
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6/29/00
IRFR13N15D/IRFU13N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 11 0 ––– VGS = 0V, VDS = 0V to 120V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θJA
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2 www.irf.com
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.18 Ω VGS = 10V, ID = 8.3A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 5.0 ––– ––– S VDS = 50V, ID = 8.3A
Total Gate Charge ––– 19 29 ID = 8.3A
Gate-to-Source Charge ––– 5.5 8.2 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– 9.4 14 VGS = 10V,
Turn-On Delay Time ––– 8.0 ––– VDD = 75V
Rise Time ––– 26 ––– ID = 8.3A
Turn-Off Delay Time ––– 12 ––– RG = 11Ω
ns
Fall Time ––– 11 ––– VGS = 10V
Input Capacitance ––– 620 ––– VGS = 0V
Output Capacitance ––– 130 ––– VDS = 25V
Reverse Transfer Capacitance ––– 38 – –– pF ƒ = 1.0MHz
Output Capacitance ––– 780 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 62 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 130 mJ
Avalanche Current ––– 8.3 A
Repetitive Avalanche Energy ––– 8.6 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 1.75
Junction-to-Ambient (PCB mount)* – –– 50 °C/W
Junction-to-Ambient ––– 110
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 8.3A, VGS = 0V
Reverse Recovery Time ––– 110 ––– ns TJ = 25°C, IF = 8.3A
Reverse RecoveryCharge ––– 520 ––– nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
14
56
showing the
A
p-n junction diode.
G
D
S
IRFR13N15D/IRFU13N15D
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM
5.0V
5.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
5.0V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 175 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
14A
2.5
°
T = 175 C
J
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
5 6 7 8 9 10 11
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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