International Rectifier IRFU120N, IRFR120N Datasheet
PD - 91365B
IRFR/U120N
HEXFET® Power MOSFET
l Surface Mount (IRFR120N)
l Straight Lead (IRFU120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 100V
DSS
R
DS(on)
= 0.21Ω
ID = 9.4A
S
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
D - PAK
TO -252AA
I-P AK
TO-251AA
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.4
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.6 A
I
DM
PD @TC = 25°C Power Dissipation 48 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 38
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 91 mJ
Avalanche Current 5.7 A
Repetitive Avalanche Energy 4.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 3.1
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
Junction-to-Ambient ––– 110
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5/11/98
IRFR/U120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.21 VGS = 10V, ID = 5.6A
Gate Threshold Voltage 2.0 ––– 4. 0 V VDS = VGS, ID = 250µA
Forward Transconductance 2.7 ––– –– – S VDS = 25V, ID = 5.7A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
VDS = 100V, VGS = 0V
µA
VGS = 20V
nA
Total Gate Charge ––– ––– 25 ID = 5.7A
Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 4.5 ––– VDD = 50V
Rise Time ––– 23 –––
Turn-Off Delay Time ––– 32 ––– RG = 22Ω
ns
ID = 5.7A
Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 330 ––– VGS = 0V
Output Capacitance ––– 92 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
9.4
38
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 5.5A, VGS = 0V
Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A
Reverse RecoveryCharge ––– 3 90 580 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 4.7mH
DD
RG = 25Ω, I
I
≤ 5.7A, di/dt ≤ 240A/µs, V
SD
= 5.7A. (See Figure 12)
AS
DD ≤V(BR)DSS
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
,
Uses IRF520N data and test conditions
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com
D
S
IRFR/U120N
)
A
)
A
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 1 00
V , Dra in- to -S o u rc e V o ltage (V
DS
C
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 1 00
V , Dra in-t o-Sou rc e Voltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = 9.5 A
D
2.5
T = 25°C
J
T = 175°C
10
D
I , Drain-to-Sou rce Curren t (A )
1
45678910
V , Ga te-to -So u rce Vo ltage (V)
GS
J
V = 50 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(N ormali z ed)
1.0
0.5
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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